DE3686017D1 - Anisotroper gleichrichter und verfahren zu seiner herstellung. - Google Patents
Anisotroper gleichrichter und verfahren zu seiner herstellung.Info
- Publication number
- DE3686017D1 DE3686017D1 DE8686870141T DE3686017T DE3686017D1 DE 3686017 D1 DE3686017 D1 DE 3686017D1 DE 8686870141 T DE8686870141 T DE 8686870141T DE 3686017 T DE3686017 T DE 3686017T DE 3686017 D1 DE3686017 D1 DE 3686017D1
- Authority
- DE
- Germany
- Prior art keywords
- anisotropical
- rectifier
- producing
- same
- anisotropical rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/784,451 US4740477A (en) | 1985-10-04 | 1985-10-04 | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3686017D1 true DE3686017D1 (de) | 1992-08-20 |
DE3686017T2 DE3686017T2 (de) | 1993-03-04 |
Family
ID=25132485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686870141T Expired - Lifetime DE3686017T2 (de) | 1985-10-04 | 1986-10-02 | Anisotroper gleichrichter und verfahren zu seiner herstellung. |
Country Status (5)
Country | Link |
---|---|
US (3) | US4740477A (de) |
EP (1) | EP0217780B1 (de) |
JP (2) | JP2688747B2 (de) |
KR (1) | KR900008146B1 (de) |
DE (1) | DE3686017T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
EP0310836A3 (de) * | 1987-10-08 | 1989-06-14 | Siemens Aktiengesellschaft | Halbleiterbauelement mit einem planaren pn-Übergang |
US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
DE3841149A1 (de) * | 1988-12-07 | 1990-06-13 | Asea Brown Boveri | Verfahren zur herstellung einer leistungshalbleiterdiode |
US5079176A (en) * | 1990-03-26 | 1992-01-07 | Harris Corporation | Method of forming a high voltage junction in a dielectrically isolated island |
US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
US5268310A (en) * | 1992-11-25 | 1993-12-07 | M/A-Com, Inc. | Method for making a mesa type PIN diode |
EP0671770B1 (de) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Mehrschichtige Epitaxie für eine Siliziumdiode |
US5399901A (en) * | 1994-04-20 | 1995-03-21 | General Instrument Corp. | Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics |
EP0678920B1 (de) * | 1994-04-20 | 2003-01-29 | GENERAL SEMICONDUCTOR, Inc. | Halbleiteranordnung mit Mesastruktur |
FR2719416B1 (fr) * | 1994-04-29 | 1996-07-05 | Thomson Lcd | Procédé de passivation des flancs d'un composant semiconducteur à couches minces. |
DE19538853A1 (de) * | 1995-10-19 | 1997-04-24 | Bosch Gmbh Robert | Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung |
US5640043A (en) * | 1995-12-20 | 1997-06-17 | General Instrument Corporation Of Delaware | High voltage silicon diode with optimum placement of silicon-germanium layers |
US6013358A (en) * | 1997-11-18 | 2000-01-11 | Cooper Industries, Inc. | Transient voltage protection device with ceramic substrate |
US5930660A (en) * | 1997-10-17 | 1999-07-27 | General Semiconductor, Inc. | Method for fabricating diode with improved reverse energy characteristics |
US5882986A (en) * | 1998-03-30 | 1999-03-16 | General Semiconductor, Inc. | Semiconductor chips having a mesa structure provided by sawing |
US20020163059A1 (en) * | 2000-02-17 | 2002-11-07 | Hamerski Roman J. | Device with epitaxial base |
SE0002179D0 (sv) * | 2000-06-13 | 2000-06-13 | Abb Research Ltd | A method for producing a pn-junction |
US20040075160A1 (en) * | 2002-10-18 | 2004-04-22 | Jack Eng | Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
US20070077738A1 (en) * | 2005-10-03 | 2007-04-05 | Aram Tanielian | Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses |
JP5213350B2 (ja) * | 2007-04-26 | 2013-06-19 | 関西電力株式会社 | 炭化珪素ツェナーダイオード |
DE102018113573B4 (de) * | 2018-06-07 | 2022-11-03 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Diode mit einem Halbleiterkörper |
JP7331672B2 (ja) * | 2019-12-09 | 2023-08-23 | 富士通株式会社 | 半導体デバイス、これを用いた無線受信器、及び半導体デバイスの製造方法 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL135006C (de) * | 1958-12-24 | |||
US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
NL262701A (de) * | 1960-03-25 | |||
NL268758A (de) * | 1960-09-20 | |||
US3333326A (en) * | 1964-06-29 | 1967-08-01 | Ibm | Method of modifying electrical characteristic of semiconductor member |
US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
US3413527A (en) * | 1964-10-02 | 1968-11-26 | Gen Electric | Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device |
US3491434A (en) * | 1965-01-28 | 1970-01-27 | Texas Instruments Inc | Junction isolation diffusion |
US3378915A (en) * | 1966-03-31 | 1968-04-23 | Northern Electric Co | Method of making a planar diffused semiconductor voltage reference diode |
US3368301A (en) * | 1966-04-06 | 1968-02-13 | Kinberg Benjamin | Rocket toy |
US3432919A (en) * | 1966-10-31 | 1969-03-18 | Raytheon Co | Method of making semiconductor diodes |
US3701696A (en) * | 1969-08-20 | 1972-10-31 | Gen Electric | Process for simultaneously gettering,passivating and locating a junction within a silicon crystal |
US3669773A (en) * | 1970-02-24 | 1972-06-13 | Alpha Ind Inc | Method of producing semiconductor devices |
US3633321A (en) * | 1970-07-21 | 1972-01-11 | Roto Finish Co | Flexible gate for a vibratory finishing machine |
US3706129A (en) * | 1970-07-27 | 1972-12-19 | Gen Electric | Integrated semiconductor rectifiers and processes for their fabrication |
US3674995A (en) * | 1970-08-31 | 1972-07-04 | Texas Instruments Inc | Computer controlled device testing and subsequent arbitrary adjustment of device characteristics |
US3617821A (en) * | 1970-09-17 | 1971-11-02 | Rca Corp | High-voltage transistor structure having uniform thermal characteristics |
US3746587A (en) * | 1970-11-04 | 1973-07-17 | Raytheon Co | Method of making semiconductor diodes |
US3689993A (en) * | 1971-07-26 | 1972-09-12 | Texas Instruments Inc | Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks |
JPS4826430A (de) * | 1971-08-11 | 1973-04-07 | ||
US3781925A (en) * | 1971-11-26 | 1974-01-01 | G Curtis | Pool water temperature control |
US3767485A (en) * | 1971-12-29 | 1973-10-23 | A Sahagun | Method for producing improved pn junction |
US3832246A (en) * | 1972-05-22 | 1974-08-27 | Bell Telephone Labor Inc | Methods for making avalanche diodes |
US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
DE2324780C3 (de) * | 1973-05-16 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Halbleiterbauelements |
JPS50110571A (de) * | 1974-02-07 | 1975-08-30 | ||
US3895429A (en) * | 1974-05-09 | 1975-07-22 | Rca Corp | Method of making a semiconductor device |
US3954524A (en) * | 1974-07-26 | 1976-05-04 | Texas Instruments Incorporated | Self-aligning photoresist process for selectively opening tops of mesas in mesa-diode-array structures |
GB1485015A (en) * | 1974-10-29 | 1977-09-08 | Mullard Ltd | Semi-conductor device manufacture |
US4064620A (en) * | 1976-01-27 | 1977-12-27 | Hughes Aircraft Company | Ion implantation process for fabricating high frequency avalanche devices |
JPS5313366A (en) * | 1976-07-22 | 1978-02-06 | Fujitsu Ltd | Manufacture of mesa-type semiconductor device |
US4047196A (en) * | 1976-08-24 | 1977-09-06 | Rca Corporation | High voltage semiconductor device having a novel edge contour |
DE2755168A1 (de) * | 1977-12-10 | 1979-06-13 | Itt Ind Gmbh Deutsche | Verfahren zur herstellung von halbleiterbauelementen |
US4138280A (en) * | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
US4255757A (en) * | 1978-12-05 | 1981-03-10 | International Rectifier Corporation | High reverse voltage semiconductor device with fast recovery time with central depression |
US4373255A (en) * | 1979-06-19 | 1983-02-15 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink |
JPS57166078A (en) * | 1981-04-06 | 1982-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
GB2113907B (en) * | 1981-12-22 | 1986-03-19 | Texas Instruments Ltd | Reverse-breakdown pn junction devices |
JPS60186071A (ja) * | 1984-03-05 | 1985-09-21 | Nec Corp | 半導体装置の製造方法 |
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
-
1985
- 1985-10-04 US US06/784,451 patent/US4740477A/en not_active Expired - Lifetime
-
1986
- 1986-09-30 KR KR1019860008238A patent/KR900008146B1/ko not_active IP Right Cessation
- 1986-10-01 JP JP61234258A patent/JP2688747B2/ja not_active Expired - Lifetime
- 1986-10-02 DE DE8686870141T patent/DE3686017T2/de not_active Expired - Lifetime
- 1986-10-02 EP EP86870141A patent/EP0217780B1/de not_active Expired - Lifetime
-
1988
- 1988-01-11 US US07/142,737 patent/US4891685A/en not_active Expired - Lifetime
-
1989
- 1989-09-27 US US07/404,604 patent/US5010023A/en not_active Expired - Lifetime
-
1997
- 1997-04-09 JP JP09105386A patent/JP3073706B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900008146B1 (ko) | 1990-11-03 |
JP2688747B2 (ja) | 1997-12-10 |
JPH1041314A (ja) | 1998-02-13 |
EP0217780A2 (de) | 1987-04-08 |
US5010023A (en) | 1991-04-23 |
EP0217780B1 (de) | 1992-07-15 |
US4740477A (en) | 1988-04-26 |
JPS62118583A (ja) | 1987-05-29 |
KR870004522A (ko) | 1987-05-11 |
DE3686017T2 (de) | 1993-03-04 |
JP3073706B2 (ja) | 2000-08-07 |
US4891685A (en) | 1990-01-02 |
EP0217780A3 (en) | 1989-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: GENERAL SEMICONDUCTOR, INC., MELVILLE, N.Y., US |