DE3685858D1 - Verfahren zur verstaerkung eines koerpers aus silizium, materialien dafuer und seine anwendung zur verringerung der dicke eines siliciumplaettchens. - Google Patents
Verfahren zur verstaerkung eines koerpers aus silizium, materialien dafuer und seine anwendung zur verringerung der dicke eines siliciumplaettchens.Info
- Publication number
- DE3685858D1 DE3685858D1 DE8686107263T DE3685858T DE3685858D1 DE 3685858 D1 DE3685858 D1 DE 3685858D1 DE 8686107263 T DE8686107263 T DE 8686107263T DE 3685858 T DE3685858 T DE 3685858T DE 3685858 D1 DE3685858 D1 DE 3685858D1
- Authority
- DE
- Germany
- Prior art keywords
- silicone
- reinforcing
- reducing
- thickness
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74010285A | 1985-05-31 | 1985-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3685858D1 true DE3685858D1 (de) | 1992-08-06 |
| DE3685858T2 DE3685858T2 (de) | 1993-02-04 |
Family
ID=24975044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8686107263T Expired - Fee Related DE3685858T2 (de) | 1985-05-31 | 1986-05-28 | Verfahren zur verstaerkung eines koerpers aus silizium, materialien dafuer und seine anwendung zur verringerung der dicke eines siliciumplaettchens. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0203591B1 (de) |
| JP (1) | JPH0693448B2 (de) |
| KR (1) | KR970000416B1 (de) |
| CN (1) | CN86103467B (de) |
| DE (1) | DE3685858T2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4892842A (en) * | 1987-10-29 | 1990-01-09 | Tektronix, Inc. | Method of treating an integrated circuit |
| US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
| EP0940860B1 (de) * | 1997-08-27 | 2003-10-15 | Josuke Nakata | Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial |
| US6350664B1 (en) | 1999-09-02 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6900534B2 (en) * | 2000-03-16 | 2005-05-31 | Texas Instruments Incorporated | Direct attach chip scale package |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3437527A (en) * | 1966-10-26 | 1969-04-08 | Webb James E | Method for producing a solar cell having an integral protective covering |
| US3460003A (en) * | 1967-01-30 | 1969-08-05 | Corning Glass Works | Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2 |
| JPS4836214A (de) * | 1971-09-11 | 1973-05-28 | ||
| NL7604951A (nl) * | 1976-05-10 | 1977-11-14 | Philips Nv | Glas voor het passiveren van halfgeleider- inrichtingen. |
| US4321747A (en) * | 1978-05-30 | 1982-03-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of manufacturing a solid-state image sensing device |
| US4422091A (en) * | 1981-01-19 | 1983-12-20 | Rockwell International Corporation | Backside illuminated imaging charge coupled device |
| JPS59117219A (ja) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0642472B2 (ja) * | 1983-10-15 | 1994-06-01 | ロ−ム株式会社 | 半導体装置の製造方法 |
-
1986
- 1986-05-12 KR KR1019860003667A patent/KR970000416B1/ko not_active IP Right Cessation
- 1986-05-17 CN CN86103467A patent/CN86103467B/zh not_active Expired
- 1986-05-28 DE DE8686107263T patent/DE3685858T2/de not_active Expired - Fee Related
- 1986-05-28 EP EP86107263A patent/EP0203591B1/de not_active Expired - Lifetime
- 1986-05-30 JP JP61125589A patent/JPH0693448B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6230373A (ja) | 1987-02-09 |
| EP0203591B1 (de) | 1992-07-01 |
| JPH0693448B2 (ja) | 1994-11-16 |
| EP0203591A3 (en) | 1988-07-20 |
| KR860009499A (ko) | 1986-12-23 |
| CN86103467B (zh) | 1988-09-14 |
| DE3685858T2 (de) | 1993-02-04 |
| EP0203591A2 (de) | 1986-12-03 |
| CN86103467A (zh) | 1986-11-26 |
| KR970000416B1 (ko) | 1997-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SCIENTIFIC IMAGING TECHNOLOGIES, INC., BEAVERTON, |
|
| 8339 | Ceased/non-payment of the annual fee |