DE3684125D1 - Ausschaltsteuerschaltung fuer einen abschaltbaren thyristor. - Google Patents

Ausschaltsteuerschaltung fuer einen abschaltbaren thyristor.

Info

Publication number
DE3684125D1
DE3684125D1 DE8686309762T DE3684125T DE3684125D1 DE 3684125 D1 DE3684125 D1 DE 3684125D1 DE 8686309762 T DE8686309762 T DE 8686309762T DE 3684125 T DE3684125 T DE 3684125T DE 3684125 D1 DE3684125 D1 DE 3684125D1
Authority
DE
Germany
Prior art keywords
switch
control circuit
switchable thyristor
thyristor
switchable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686309762T
Other languages
English (en)
Inventor
Yukinori Tsuruta
Kazuto Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3684125D1 publication Critical patent/DE3684125D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off
DE8686309762T 1985-12-16 1986-12-15 Ausschaltsteuerschaltung fuer einen abschaltbaren thyristor. Expired - Lifetime DE3684125D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60282402A JPS62141963A (ja) 1985-12-16 1985-12-16 Ｇｔｏのオフゲ−ト回路

Publications (1)

Publication Number Publication Date
DE3684125D1 true DE3684125D1 (de) 1992-04-09

Family

ID=17651940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686309762T Expired - Lifetime DE3684125D1 (de) 1985-12-16 1986-12-15 Ausschaltsteuerschaltung fuer einen abschaltbaren thyristor.

Country Status (6)

Country Link
US (1) US4752705A (de)
EP (1) EP0228226B1 (de)
JP (1) JPS62141963A (de)
AU (1) AU588951B2 (de)
DE (1) DE3684125D1 (de)
FI (1) FI87031C (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3810358A1 (de) * 1987-12-12 1989-06-22 Asea Brown Boveri Verfahren zur ansteuerung eines abschaltthyristors
DE3869120D1 (de) * 1988-01-26 1992-04-16 Asea Brown Boveri Hochleistungsschalter.
DE58905844D1 (de) * 1989-02-02 1993-11-11 Asea Brown Boveri Druckkontaktiertes Halbleiterbauelement.
EP0381849A1 (de) * 1989-02-07 1990-08-16 Asea Brown Boveri Ag Schnelle Leistungshalbleiterschaltung
AU612311B3 (en) * 1989-10-03 1991-05-17 Tsui, Huai-Chi Wang, Apparatus for triggering a plurality of thyristor devices
EP0489945B1 (de) * 1990-12-08 2003-01-29 ABB Schweiz AG Schaltanordnung für einen HF-GTO
US5739220A (en) * 1997-02-06 1998-04-14 Fina Technology, Inc. Method of olefin polymerization utilizing hydrogen pulsing, products made therefrom, and method of hydrogenation
US20080054986A1 (en) * 2006-04-17 2008-03-06 Berkebile Lee E Resonant-Current-Source Gate Drive for Simultaneous Operation of Thyristors Using Alternating-Current in the Resonant Circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3940633A (en) * 1974-07-01 1976-02-24 General Electric Company GTO turn-off circuit providing turn-off gate current pulse proportional to anode current
JPS6056062B2 (ja) * 1977-03-24 1985-12-07 株式会社東芝 ゲ−トタ−ンオフサイリスタのゲ−ト回路
JPS6036708B2 (ja) * 1978-02-24 1985-08-22 株式会社日立製作所 電界効果形サイリスタのゲ−ト回路
JPS56136023A (en) * 1980-03-27 1981-10-23 Toshiba Corp Pulse amplifying circuit
JPS5851618A (ja) * 1981-09-24 1983-03-26 Hitachi Ltd ゲ−トタ−ンオフサイリスタのゲ−ト回路
JPS59115617A (ja) * 1982-12-22 1984-07-04 Toshiba Corp オフゲートパルス増幅回路
DE3577787D1 (de) * 1984-11-28 1990-06-21 Bbc Brown Boveri & Cie Induktionsarme anoden-kathodenbeschaltung eines abschaltbaren leistungsthyristors.
DE3517467A1 (de) * 1985-05-10 1986-11-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltungsanordnung fuer den abschaltsteuerkreis eines gto-thyristors

Also Published As

Publication number Publication date
JPS62141963A (ja) 1987-06-25
AU6652786A (en) 1987-06-18
FI865092A0 (fi) 1986-12-15
FI87031C (fi) 1992-11-10
EP0228226A3 (en) 1989-05-03
FI865092A (fi) 1987-06-17
EP0228226A2 (de) 1987-07-08
EP0228226B1 (de) 1992-03-04
FI87031B (fi) 1992-07-31
US4752705A (en) 1988-06-21
AU588951B2 (en) 1989-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee