DE3676359D1 - Festwertspeicher mit einmaliger elektrischer einschreibemoeglichkeit. - Google Patents

Festwertspeicher mit einmaliger elektrischer einschreibemoeglichkeit.

Info

Publication number
DE3676359D1
DE3676359D1 DE8686400870T DE3676359T DE3676359D1 DE 3676359 D1 DE3676359 D1 DE 3676359D1 DE 8686400870 T DE8686400870 T DE 8686400870T DE 3676359 T DE3676359 T DE 3676359T DE 3676359 D1 DE3676359 D1 DE 3676359D1
Authority
DE
Germany
Prior art keywords
fixed value
value storage
unique electrical
entry possibility
electrical entry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686400870T
Other languages
English (en)
Inventor
Serge Fruhauf
Jean-Marie Gaultier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE3676359D1 publication Critical patent/DE3676359D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
DE8686400870T 1985-04-26 1986-04-22 Festwertspeicher mit einmaliger elektrischer einschreibemoeglichkeit. Expired - Fee Related DE3676359D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8506444A FR2587531B1 (fr) 1985-04-26 1985-04-26 Memoire morte programmable electriquement une seule fois

Publications (1)

Publication Number Publication Date
DE3676359D1 true DE3676359D1 (de) 1991-02-07

Family

ID=9318749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400870T Expired - Fee Related DE3676359D1 (de) 1985-04-26 1986-04-22 Festwertspeicher mit einmaliger elektrischer einschreibemoeglichkeit.

Country Status (4)

Country Link
EP (1) EP0206844B1 (de)
JP (1) JP3019974B2 (de)
DE (1) DE3676359D1 (de)
FR (1) FR2587531B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603205B2 (ja) * 1987-03-16 1997-04-23 シーメンス、アクチエンゲゼルシヤフト 多段集積デコーダ装置
US4967394A (en) * 1987-09-09 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor memory device having a test cell array
FR2629248B1 (fr) * 1988-03-25 1992-04-24 Sgs Thomson Microelectronics Procede de test de memoire a programmation unique et memoire correspondante
JP2773271B2 (ja) * 1989-07-26 1998-07-09 日本電気株式会社 半導体記憶装置
FR2655737B1 (fr) * 1989-12-08 1992-06-12 Sgs Thomson Microelectronics Detecteur de variation rapide d'alimentation de circuit integre.
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
FR2667193B1 (fr) * 1990-09-25 1993-07-02 Sgs Thomson Microelectronics Circuit de precharge pour la lecture de memoires.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914838B2 (ja) * 1978-11-25 1984-04-06 富士通株式会社 フィ−ルドプログラマブル素子
JPS57179998A (en) * 1981-04-25 1982-11-05 Toshiba Corp Memory device having redundancy
JPS5873097A (ja) * 1981-10-27 1983-05-02 Nec Corp デコ−ダ−回路
DE3232215A1 (de) * 1982-08-30 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte digitale halbleiterschaltung
JPS6059599A (ja) * 1983-09-13 1985-04-05 Nec Corp 不揮発性半導体メモリ
JPS6134800A (ja) * 1984-07-25 1986-02-19 Nec Corp 読出し専用半導体記憶装置

Also Published As

Publication number Publication date
FR2587531B1 (fr) 1991-04-26
JP3019974B2 (ja) 2000-03-15
JPS6254900A (ja) 1987-03-10
EP0206844A1 (de) 1986-12-30
EP0206844B1 (de) 1991-01-02
FR2587531A1 (fr) 1987-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee