KR880700430A - 전기적인 데이타 기억소자 - Google Patents

전기적인 데이타 기억소자

Info

Publication number
KR880700430A
KR880700430A KR870700102A KR870700102A KR880700430A KR 880700430 A KR880700430 A KR 880700430A KR 870700102 A KR870700102 A KR 870700102A KR 870700102 A KR870700102 A KR 870700102A KR 880700430 A KR880700430 A KR 880700430A
Authority
KR
South Korea
Prior art keywords
data storage
storage element
electrical data
electrical
storage
Prior art date
Application number
KR870700102A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880700430A publication Critical patent/KR880700430A/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR870700102A 1985-06-07 1987-02-05 전기적인 데이타 기억소자 KR880700430A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8514452 1985-06-07
PCT/GB1986/000328 WO1986007487A1 (en) 1985-06-07 1986-06-09 Electrical data storage elements

Publications (1)

Publication Number Publication Date
KR880700430A true KR880700430A (ko) 1988-03-15

Family

ID=10580355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870700102A KR880700430A (ko) 1985-06-07 1987-02-05 전기적인 데이타 기억소자

Country Status (6)

Country Link
US (1) US4882706A (ko)
EP (1) EP0225366A1 (ko)
JP (1) JPS63500550A (ko)
KR (1) KR880700430A (ko)
GB (1) GB2179219B (ko)
WO (1) WO1986007487A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157635A (en) * 1989-12-27 1992-10-20 International Business Machines Corporation Input signal redriver for semiconductor modules
DE4121941C1 (en) * 1991-07-03 1993-02-25 Telefunken Electronic Gmbh, 7100 Heilbronn, De Circuitry storing switching states in dependence on threshold values - has differential amplifier stage with two emitter-coupled transistors and current mirror as active load forming comparison stage
JPH0660644A (ja) * 1992-08-05 1994-03-04 Takayama:Kk メモリーデバイス
US5835952A (en) * 1993-07-14 1998-11-10 Matsushita Electric Industrial Co., Ltd. Monolithic image data memory system and access method that utilizes multiple banks to hide precharge time
US5539233A (en) * 1993-07-22 1996-07-23 Texas Instruments Incorporated Controlled low collector breakdown voltage vertical transistor for ESD protection circuits
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6781459B1 (en) 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
KR100527559B1 (ko) * 2004-02-05 2005-11-09 주식회사 하이닉스반도체 직렬 다이오드 셀을 이용한 불휘발성 메모리 장치
KR100694426B1 (ko) * 2004-02-16 2007-03-12 주식회사 하이닉스반도체 나노 튜브 셀 및 이를 이용한 메모리 장치
KR100709462B1 (ko) * 2004-02-16 2007-04-18 주식회사 하이닉스반도체 다층 나노 튜브 셀을 이용한 메모리 장치
KR100709463B1 (ko) * 2004-02-16 2007-04-18 주식회사 하이닉스반도체 나노 튜브 셀을 이용한 메모리 장치
US7619917B2 (en) * 2006-11-28 2009-11-17 Qimonda North America Corp. Memory cell with trigger element
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
WO2013183155A1 (ja) * 2012-06-07 2013-12-12 富士通株式会社 選択的にメモリのリフレッシュを行う制御装置
US9269422B2 (en) * 2013-09-30 2016-02-23 Simon Peter Tsaoussis Two transistor ternary random access memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
BE792293A (fr) * 1971-12-09 1973-03-30 Western Electric Co Dispositif de memoire a semi-conducteur
US3753248A (en) * 1972-06-09 1973-08-14 Bell Telephone Labor Inc Two-terminal nondestructive read jfet-npn transistor semiconductor memory
US3876992A (en) * 1972-11-01 1975-04-08 Ibm Bipolar transistor memory with capacitive storage
US4037243A (en) * 1974-07-01 1977-07-19 Motorola, Inc. Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
US3992703A (en) * 1974-10-09 1976-11-16 Rockwell International Corporation Memory output circuit
GB1480201A (en) * 1975-01-06 1977-07-20 Ncr Co Four zone semiconductor device
US4181981A (en) * 1977-12-30 1980-01-01 International Business Machines Corporation Bipolar two device dynamic memory cell
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory

Also Published As

Publication number Publication date
GB8613931D0 (en) 1986-07-16
GB2179219A (en) 1987-02-25
GB2179219B (en) 1989-04-19
EP0225366A1 (en) 1987-06-16
JPS63500550A (ja) 1988-02-25
US4882706A (en) 1989-11-21
WO1986007487A1 (en) 1986-12-18

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Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid