DE3674317D1 - Beschichtete abbildungselemente aus amorphem silicium. - Google Patents

Beschichtete abbildungselemente aus amorphem silicium.

Info

Publication number
DE3674317D1
DE3674317D1 DE8686307310T DE3674317T DE3674317D1 DE 3674317 D1 DE3674317 D1 DE 3674317D1 DE 8686307310 T DE8686307310 T DE 8686307310T DE 3674317 T DE3674317 T DE 3674317T DE 3674317 D1 DE3674317 D1 DE 3674317D1
Authority
DE
Germany
Prior art keywords
amorphemic
coated
imaging elements
silicon imaging
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686307310T
Other languages
English (en)
Inventor
Damodar M Pai
Edwin Robert Kuhn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3674317D1 publication Critical patent/DE3674317D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08235Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE8686307310T 1985-09-30 1986-09-23 Beschichtete abbildungselemente aus amorphem silicium. Expired - Fee Related DE3674317D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/781,858 US4666806A (en) 1985-09-30 1985-09-30 Overcoated amorphous silicon imaging members

Publications (1)

Publication Number Publication Date
DE3674317D1 true DE3674317D1 (de) 1990-10-25

Family

ID=25124177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686307310T Expired - Fee Related DE3674317D1 (de) 1985-09-30 1986-09-23 Beschichtete abbildungselemente aus amorphem silicium.

Country Status (4)

Country Link
US (1) US4666806A (de)
EP (1) EP0217623B1 (de)
JP (1) JPS6281642A (de)
DE (1) DE3674317D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760005A (en) * 1986-11-03 1988-07-26 Xerox Corporation Amorphous silicon imaging members with barrier layers
JPH02124578A (ja) * 1988-10-11 1990-05-11 Fuji Xerox Co Ltd 電子写真感光体
US6416157B1 (en) 1998-09-30 2002-07-09 Xerox Corporation Method of marking a substrate employing a ballistic aerosol marking apparatus
US6116718A (en) * 1998-09-30 2000-09-12 Xerox Corporation Print head for use in a ballistic aerosol marking apparatus
US6416156B1 (en) 1998-09-30 2002-07-09 Xerox Corporation Kinetic fusing of a marking material
US6511149B1 (en) 1998-09-30 2003-01-28 Xerox Corporation Ballistic aerosol marking apparatus for marking a substrate
US6328409B1 (en) 1998-09-30 2001-12-11 Xerox Corporation Ballistic aerosol making apparatus for marking with a liquid material
US6454384B1 (en) 1998-09-30 2002-09-24 Xerox Corporation Method for marking with a liquid material using a ballistic aerosol marking apparatus
US6290342B1 (en) 1998-09-30 2001-09-18 Xerox Corporation Particulate marking material transport apparatus utilizing traveling electrostatic waves
US6340216B1 (en) 1998-09-30 2002-01-22 Xerox Corporation Ballistic aerosol marking apparatus for treating a substrate
US6291088B1 (en) * 1998-09-30 2001-09-18 Xerox Corporation Inorganic overcoat for particulate transport electrode grid
US6751865B1 (en) 1998-09-30 2004-06-22 Xerox Corporation Method of making a print head for use in a ballistic aerosol marking apparatus
US6265050B1 (en) 1998-09-30 2001-07-24 Xerox Corporation Organic overcoat for electrode grid
US6523928B2 (en) 1998-09-30 2003-02-25 Xerox Corporation Method of treating a substrate employing a ballistic aerosol marking apparatus
US6467862B1 (en) 1998-09-30 2002-10-22 Xerox Corporation Cartridge for use in a ballistic aerosol marking apparatus
US6136442A (en) * 1998-09-30 2000-10-24 Xerox Corporation Multi-layer organic overcoat for particulate transport electrode grid
US6328436B1 (en) 1999-09-30 2001-12-11 Xerox Corporation Electro-static particulate source, circulation, and valving system for ballistic aerosol marking
US6293659B1 (en) 1999-09-30 2001-09-25 Xerox Corporation Particulate source, circulation, and valving system for ballistic aerosol marking
US6969160B2 (en) * 2003-07-28 2005-11-29 Xerox Corporation Ballistic aerosol marking apparatus
US8617648B2 (en) * 2006-02-01 2013-12-31 Xerox Corporation Imaging members and method of treating an imaging member

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
JPS5758159A (en) * 1980-09-25 1982-04-07 Canon Inc Photoconductive member
DE3200376A1 (de) * 1981-01-09 1982-11-04 Canon K.K., Tokyo Fotoleitfaehiges element
JPH0723962B2 (ja) * 1981-09-24 1995-03-15 株式会社半導体エネルギ−研究所 ドラム形感光体の作製方法
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4465750A (en) * 1981-12-22 1984-08-14 Canon Kabushiki Kaisha Photoconductive member with a -Si having two layer regions
JPS58115018A (ja) * 1981-12-26 1983-07-08 Sharp Corp 電子写真感光体
JPS58217938A (ja) * 1982-06-12 1983-12-19 Konishiroku Photo Ind Co Ltd 電子写真感光体
JPS6059367A (ja) * 1983-08-19 1985-04-05 ゼロツクス コーポレーシヨン 調整した無定形ケイ素を含む電子写真装置
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
JPS60169854A (ja) * 1984-02-14 1985-09-03 Sanyo Electric Co Ltd 静電潜像担持体

Also Published As

Publication number Publication date
EP0217623B1 (de) 1990-09-19
JPS6281642A (ja) 1987-04-15
EP0217623A1 (de) 1987-04-08
US4666806A (en) 1987-05-19

Similar Documents

Publication Publication Date Title
DE3674317D1 (de) Beschichtete abbildungselemente aus amorphem silicium.
DK462685D0 (da) Diffusionsovertrukket polydepotpraeparat
DK62184D0 (da) Diffusionsovertrukket polydepotpraeparat
DE3684557D1 (de) Waferintegrierte halbleiteranordnung.
DE3650012D1 (de) Halbleitervorrichtung.
DE3683316D1 (de) Halbleiteranordnung.
NL189326C (nl) Halfgeleiderinrichting.
DE3683239D1 (de) Beschichtetes aufzeichnungselement aus amorphischem silizium.
DE3786070D1 (de) Umhuellte halbleiteranordnung.
DE3688064T2 (de) Halbleitervorrichtung.
DE3584799D1 (de) Halbleitervorrichtung.
DE3667879D1 (de) Halbleiteranordnung.
DE3680774D1 (de) Integriertes halbleiterbauelement.
DE3581370D1 (de) Halbleitervorrichtung.
DE3682421D1 (de) Feldeffekt-halbleiteranordnung.
DE3686490T2 (de) Halbleiterstruktur.
DE3687993T2 (de) Carboxyhydrocarbyl-substituierte Silicium-Verbindungen.
IT8620128A0 (it) Dispositivo di spalmatura.
DE3774924D1 (de) Ueberzugsmasse.
NL193883B (nl) Geïntegreerde halfgeleiderinrichting.
FI844617L (fi) Foerfarande foer framstaellning av silicium ur raoaemneskvarts i en elektrisk laogschaktugn.
DE3782004D1 (de) Beschichtungsmasse.
DE3685983D1 (de) Integrierte halbleiteranordnung.
IT8619464A0 (it) Dispositivo di spalmatura.
DE3783894D1 (de) Beschichtungsvorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee