DE3669618D1 - Mos-integrierte schaltung mit einer schutzschaltung die geteilte schutzwiderstaende beinhaltet. - Google Patents

Mos-integrierte schaltung mit einer schutzschaltung die geteilte schutzwiderstaende beinhaltet.

Info

Publication number
DE3669618D1
DE3669618D1 DE8686305902T DE3669618T DE3669618D1 DE 3669618 D1 DE3669618 D1 DE 3669618D1 DE 8686305902 T DE8686305902 T DE 8686305902T DE 3669618 T DE3669618 T DE 3669618T DE 3669618 D1 DE3669618 D1 DE 3669618D1
Authority
DE
Germany
Prior art keywords
protective
mos
shared
integrated circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686305902T
Other languages
English (en)
Inventor
Michinori Kamaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3669618D1 publication Critical patent/DE3669618D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8686305902T 1985-07-31 1986-07-31 Mos-integrierte schaltung mit einer schutzschaltung die geteilte schutzwiderstaende beinhaltet. Expired - Fee Related DE3669618D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16888185 1985-07-31

Publications (1)

Publication Number Publication Date
DE3669618D1 true DE3669618D1 (de) 1990-04-19

Family

ID=15876290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686305902T Expired - Fee Related DE3669618D1 (de) 1985-07-31 1986-07-31 Mos-integrierte schaltung mit einer schutzschaltung die geteilte schutzwiderstaende beinhaltet.

Country Status (3)

Country Link
EP (1) EP0211622B1 (de)
JP (1) JP2580571B2 (de)
DE (1) DE3669618D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
EP0996158B9 (de) * 1998-10-23 2008-06-18 STMicroelectronics S.r.l. Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur
JP7007564B2 (ja) * 2017-11-10 2022-01-24 ミツミ電機株式会社 レギュレータ用半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1819770A (en) * 1969-08-21 1972-02-03 Rca Corporation A high value, high voltage diffused resistor network for integrated circuits
JPS57190360A (en) * 1981-05-19 1982-11-22 Toshiba Corp Protecting device for semiconductor
JPS58186959A (ja) * 1982-04-26 1983-11-01 Nec Corp 半導体装置

Also Published As

Publication number Publication date
EP0211622A1 (de) 1987-02-25
EP0211622B1 (de) 1990-03-14
JP2580571B2 (ja) 1997-02-12
JPS62122164A (ja) 1987-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee