DE3635647A1 - Plasmareaktor zum aetzen von leiterplatten od. dgl. - Google Patents

Plasmareaktor zum aetzen von leiterplatten od. dgl.

Info

Publication number
DE3635647A1
DE3635647A1 DE19863635647 DE3635647A DE3635647A1 DE 3635647 A1 DE3635647 A1 DE 3635647A1 DE 19863635647 DE19863635647 DE 19863635647 DE 3635647 A DE3635647 A DE 3635647A DE 3635647 A1 DE3635647 A1 DE 3635647A1
Authority
DE
Germany
Prior art keywords
frit
reaction chamber
gas
circuit boards
plasma reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19863635647
Other languages
German (de)
English (en)
Inventor
Richard Dipl Ing Ehrenfeldner
Dieter Dr Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Voestalpine AG
Original Assignee
Voestalpine AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Voestalpine AG filed Critical Voestalpine AG
Publication of DE3635647A1 publication Critical patent/DE3635647A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
    • H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
DE19863635647 1985-11-04 1986-10-21 Plasmareaktor zum aetzen von leiterplatten od. dgl. Ceased DE3635647A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT317085A AT386315B (de) 1985-11-04 1985-11-04 Plasmareaktor zum aetzen von leiterplatten

Publications (1)

Publication Number Publication Date
DE3635647A1 true DE3635647A1 (de) 1987-05-07

Family

ID=3546420

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863635647 Ceased DE3635647A1 (de) 1985-11-04 1986-10-21 Plasmareaktor zum aetzen von leiterplatten od. dgl.

Country Status (4)

Country Link
JP (1) JPS62112791A (OSRAM)
AT (1) AT386315B (OSRAM)
CH (1) CH671303A5 (OSRAM)
DE (1) DE3635647A1 (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
US4977855A (en) * 1987-01-29 1990-12-18 Tadahiro Ohmi Apparatus for forming film with surface reaction
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02295116A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体製造装置
CN105575796A (zh) * 2014-10-13 2016-05-11 友威科技股份有限公司 用于印刷电路板的等离子体蚀刻装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
DE3312307A1 (de) * 1983-04-06 1984-10-11 Sando Iron Works Co., Ltd., Wakayama, Wakayama Vorrichtung zum behandeln eines textilguts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
DE3312307A1 (de) * 1983-04-06 1984-10-11 Sando Iron Works Co., Ltd., Wakayama, Wakayama Vorrichtung zum behandeln eines textilguts

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin Bd. 27, No. 4A, Sept. 1984, S. 1978 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977855A (en) * 1987-01-29 1990-12-18 Tadahiro Ohmi Apparatus for forming film with surface reaction
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5134963A (en) * 1991-10-28 1992-08-04 International Business Machines Corporation LPCVD reactor for high efficiency, high uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
US6010748A (en) * 1996-03-22 2000-01-04 Advanced Technology Materials, Inc. Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector

Also Published As

Publication number Publication date
ATA317085A (de) 1987-12-15
AT386315B (de) 1988-08-10
JPS62112791A (ja) 1987-05-23
CH671303A5 (OSRAM) 1989-08-15
JPH0129875B2 (OSRAM) 1989-06-14

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection