DE3620300A1 - Verfahren und vorrichtung zur herstellung einkristalliner duennfilme - Google Patents

Verfahren und vorrichtung zur herstellung einkristalliner duennfilme

Info

Publication number
DE3620300A1
DE3620300A1 DE19863620300 DE3620300A DE3620300A1 DE 3620300 A1 DE3620300 A1 DE 3620300A1 DE 19863620300 DE19863620300 DE 19863620300 DE 3620300 A DE3620300 A DE 3620300A DE 3620300 A1 DE3620300 A1 DE 3620300A1
Authority
DE
Germany
Prior art keywords
semiconductor layer
light
laser beam
melt
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863620300
Other languages
German (de)
English (en)
Inventor
Yasuo Tokio/Tokyo Kanoh
Shigeru Tokio/Tokyo Kojima
Setsuo Kanagawa Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3620300A1 publication Critical patent/DE3620300A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
DE19863620300 1985-06-18 1986-06-18 Verfahren und vorrichtung zur herstellung einkristalliner duennfilme Withdrawn DE3620300A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60130764A JPS61289617A (ja) 1985-06-18 1985-06-18 薄膜単結晶の製造装置

Publications (1)

Publication Number Publication Date
DE3620300A1 true DE3620300A1 (de) 1986-12-18

Family

ID=15042097

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863620300 Withdrawn DE3620300A1 (de) 1985-06-18 1986-06-18 Verfahren und vorrichtung zur herstellung einkristalliner duennfilme

Country Status (5)

Country Link
JP (1) JPS61289617A (ja)
KR (1) KR870000744A (ja)
DE (1) DE3620300A1 (ja)
FR (1) FR2583572B1 (ja)
GB (1) GB2177256B (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3921038A1 (de) * 1988-06-28 1990-01-04 Ricoh Kk Halbleitersubstrat und verfahren zu dessen herstellung
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
JPH01246829A (ja) * 1988-03-28 1989-10-02 Tokyo Electron Ltd ビームアニール装置
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US8183498B2 (en) 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
US8927898B2 (en) 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
CN101680107B (zh) * 2007-04-24 2013-04-10 Limo专利管理有限及两合公司 改变半导体层结构的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4380864A (en) * 1981-07-27 1983-04-26 The United States Of America As Represented By The Secretary Of The Air Force Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
DE3921038A1 (de) * 1988-06-28 1990-01-04 Ricoh Kk Halbleitersubstrat und verfahren zu dessen herstellung
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
US5565697A (en) * 1988-06-28 1996-10-15 Ricoh Company, Ltd. Semiconductor structure having island forming grooves
DE3921038C2 (de) * 1988-06-28 1998-12-10 Ricoh Kk Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film

Also Published As

Publication number Publication date
FR2583572B1 (fr) 1990-05-11
GB2177256B (en) 1988-12-21
GB8614683D0 (en) 1986-07-23
KR870000744A (ko) 1987-02-20
JPS61289617A (ja) 1986-12-19
FR2583572A1 (fr) 1986-12-19
GB2177256A (en) 1987-01-14

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: TER MEER, N., DIPL.-CHEM. DR.RER.NAT. MUELLER, F.,

8141 Disposal/no request for examination