DE3611297C2 - - Google Patents

Info

Publication number
DE3611297C2
DE3611297C2 DE3611297A DE3611297A DE3611297C2 DE 3611297 C2 DE3611297 C2 DE 3611297C2 DE 3611297 A DE3611297 A DE 3611297A DE 3611297 A DE3611297 A DE 3611297A DE 3611297 C2 DE3611297 C2 DE 3611297C2
Authority
DE
Germany
Prior art keywords
current
gto
switching element
gate electrode
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3611297A
Other languages
German (de)
English (en)
Other versions
DE3611297A1 (de
Inventor
Hiroshi Itami Hyogo Jp Mitsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3611297A1 publication Critical patent/DE3611297A1/de
Application granted granted Critical
Publication of DE3611297C2 publication Critical patent/DE3611297C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
DE19863611297 1985-04-05 1986-04-04 Ansteuerschaltung fuer gto-thyristor Granted DE3611297A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072936A JPS61230519A (ja) 1985-04-05 1985-04-05 ゲ−トタ−ンオフサイリスタの駆動回路

Publications (2)

Publication Number Publication Date
DE3611297A1 DE3611297A1 (de) 1986-10-16
DE3611297C2 true DE3611297C2 (OSRAM) 1989-03-16

Family

ID=13503749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863611297 Granted DE3611297A1 (de) 1985-04-05 1986-04-04 Ansteuerschaltung fuer gto-thyristor

Country Status (4)

Country Link
US (1) US4675543A (OSRAM)
JP (1) JPS61230519A (OSRAM)
DE (1) DE3611297A1 (OSRAM)
FR (1) FR2580127B1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744015B2 (ja) * 1988-06-16 1998-04-28 株式会社日立製作所 半導体スイツチング装置
JPH0799931B2 (ja) * 1989-09-08 1995-10-25 東洋電機製造株式会社 スイッチング素子の駆動回路
JP2855816B2 (ja) * 1990-07-25 1999-02-10 三菱電機株式会社 半導体制御装置
EP0489945B1 (de) * 1990-12-08 2003-01-29 ABB Schweiz AG Schaltanordnung für einen HF-GTO
US5872478A (en) * 1996-11-04 1999-02-16 Fmc Corporation SCR firing circuit for high voltage control applications
US6404265B1 (en) * 1999-08-13 2002-06-11 York International Corporation Highly efficient driver circuit for a solid state switch
US9401708B2 (en) * 2014-05-20 2016-07-26 General Electric Company Gate drive unit and method for controlling a gate drive unit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1407822A (fr) * 1964-06-25 1965-08-06 Merlin Gerin Interrupteur électronique
GB1430637A (en) * 1972-05-15 1976-03-31 Sony Corp Switching circuits comprising a gate controlled switching device
US3928775A (en) * 1974-06-20 1975-12-23 Gen Electric Turn-off circuit for gate turn-off thyristors and transistors using snubber energy
US3927332A (en) * 1975-02-24 1975-12-16 Rca Corp Drive circuit for controlling conduction of a semiconductor device
JPS5545274A (en) * 1978-09-26 1980-03-29 Hitachi Ltd Gate circuit of gate turn-off thyristor
JPS5545276A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Gate circuit of gate turn-off thyristor
DE2907403A1 (de) * 1979-02-23 1980-09-04 Licentia Gmbh Anordnung zur erzeugung von loeschimpulsen fuer einen leistungshalbleiter

Also Published As

Publication number Publication date
JPS61230519A (ja) 1986-10-14
DE3611297A1 (de) 1986-10-16
FR2580127B1 (OSRAM) 1992-03-27
US4675543A (en) 1987-06-23
FR2580127A1 (OSRAM) 1986-10-10

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee