DE3603337C2 - - Google Patents

Info

Publication number
DE3603337C2
DE3603337C2 DE3603337A DE3603337A DE3603337C2 DE 3603337 C2 DE3603337 C2 DE 3603337C2 DE 3603337 A DE3603337 A DE 3603337A DE 3603337 A DE3603337 A DE 3603337A DE 3603337 C2 DE3603337 C2 DE 3603337C2
Authority
DE
Germany
Prior art keywords
substrate
metal layer
piezoelectric film
piezoelectric
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3603337A
Other languages
German (de)
English (en)
Other versions
DE3603337A1 (de
Inventor
Keiko Kunitachi Tokio/Tokyo Jp Kushida
Hiroshi Matsudo Chiba Jp Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3603337A1 publication Critical patent/DE3603337A1/de
Application granted granted Critical
Publication of DE3603337C2 publication Critical patent/DE3603337C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE19863603337 1985-02-04 1986-02-04 Piezoelektrischer wandler und verfahren zu seiner herstellung Granted DE3603337A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1944685A JPH0763101B2 (ja) 1985-02-04 1985-02-04 圧電変換器およびその製造方法

Publications (2)

Publication Number Publication Date
DE3603337A1 DE3603337A1 (de) 1986-08-14
DE3603337C2 true DE3603337C2 (OSRAM) 1991-09-26

Family

ID=11999533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863603337 Granted DE3603337A1 (de) 1985-02-04 1986-02-04 Piezoelektrischer wandler und verfahren zu seiner herstellung

Country Status (3)

Country Link
US (1) US4677336A (OSRAM)
JP (1) JPH0763101B2 (OSRAM)
DE (1) DE3603337A1 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2532381B2 (ja) * 1986-03-04 1996-09-11 松下電器産業株式会社 強誘電体薄膜素子及びその製造方法
US4816125A (en) * 1987-11-25 1989-03-28 The Regents Of The University Of California IC processed piezoelectric microphone
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
WO1993005208A1 (en) * 1991-09-10 1993-03-18 Massachusetts Institute Of Technology Enhanced heteroepitaxy
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5466932A (en) * 1993-09-22 1995-11-14 Westinghouse Electric Corp. Micro-miniature piezoelectric diaphragm pump for the low pressure pumping of gases
US5889871A (en) * 1993-10-18 1999-03-30 The United States Of America As Represented By The Secretary Of The Navy Surface-laminated piezoelectric-film sound transducer
JP4122564B2 (ja) * 1998-04-24 2008-07-23 セイコーエプソン株式会社 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
US6204757B1 (en) * 1998-05-29 2001-03-20 Francis Christopher Evans Seatbelt usage and safety data accounting system
US6438070B1 (en) 1999-10-04 2002-08-20 Halliburton Energy Services, Inc. Hydrophone for use in a downhole tool
US6609430B1 (en) 2000-05-09 2003-08-26 Shrinivas G. Joshi Low profile transducer for flow meters
US7119800B2 (en) * 2003-06-24 2006-10-10 Tyco Electronics Corporation Acoustic touch sensor with low-profile diffractive grating transducer assembly
US7057330B2 (en) * 2003-12-18 2006-06-06 Palo Alto Research Center Incorporated Broad frequency band energy scavenger
US7293411B2 (en) 2004-12-20 2007-11-13 Palo Alto Research Center Incorporated Energy scavengers which adjust their frequency by altering liquid distributions on a beam
DE102006004448B3 (de) * 2006-01-31 2007-10-04 Siemens Ag Dünnfilmkondensator mit strukturierter Bodenelektrode, Verfahren zum Herstellen des Dünnfilmkondensators und Verwendung des Dünnfilmkondensators
WO2007115283A2 (en) * 2006-04-04 2007-10-11 Kolo Technologies, Inc. Modulation in micromachined ultrasonic transducers
US11079543B1 (en) * 2010-09-23 2021-08-03 Lawrence Livermore National Security, Llc Isotropic etchback method of linewidth tailoring multilayer dielectric diffraction gratings for improvement of laser damage resistance and diffraction efficiency
US8866367B2 (en) * 2011-10-17 2014-10-21 The United States Of America As Represented By The Secretary Of The Army Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
GB2498213B (en) * 2012-01-09 2018-11-21 Bae Systems Plc Transducer arrangement
JP2016032007A (ja) * 2014-07-28 2016-03-07 株式会社リコー 圧電膜の製造方法、圧電素子の製造方法、液体吐出ヘッド及び画像形成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1541523B1 (de) * 1965-12-21 1970-07-09 Nippon Electric Co Piezoelektrisches elektroakustisches Wandlerelement und Verfahren zu seiner Herstellung
US3872332A (en) * 1971-04-19 1975-03-18 Honeywell Inc Composite bond for acoustic transducers
US3891869A (en) * 1973-09-04 1975-06-24 Scarpa Lab Inc Piezoelectrically driven ultrasonic generator
US3942139A (en) * 1974-11-08 1976-03-02 Westinghouse Electric Corporation Broadband microwave bulk acoustic delay device
JPS52113713A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Array type ultra-high frequency sound oscillator
GB2056810B (en) * 1979-08-14 1984-02-22 Clarion Co Ltd Surface-acoustic-wave device
JPS5832360U (ja) * 1981-08-20 1983-03-02 ティーディーケイ株式会社 超音波探触子
US4480209A (en) * 1981-10-09 1984-10-30 Clarion Co., Ltd. Surface acoustic wave device having a specified crystalline orientation
JPS59223230A (ja) * 1983-05-30 1984-12-15 Matsushita Electric Ind Co Ltd チタン酸鉛配向薄膜の製造方法
US4692653A (en) * 1984-03-23 1987-09-08 Hitachi, Ltd. Acoustic transducers utilizing ZnO thin film

Also Published As

Publication number Publication date
US4677336A (en) 1987-06-30
JPH0763101B2 (ja) 1995-07-05
JPS61177900A (ja) 1986-08-09
DE3603337A1 (de) 1986-08-14

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee