DE3587003D1 - Nickel/indium-legierung fuer die herstellung eines hermetisch verschlossenen gehaeuses fuer halbleiteranordnungen und andere elektronische anordnungen. - Google Patents
Nickel/indium-legierung fuer die herstellung eines hermetisch verschlossenen gehaeuses fuer halbleiteranordnungen und andere elektronische anordnungen.Info
- Publication number
- DE3587003D1 DE3587003D1 DE8585103887T DE3587003T DE3587003D1 DE 3587003 D1 DE3587003 D1 DE 3587003D1 DE 8585103887 T DE8585103887 T DE 8585103887T DE 3587003 T DE3587003 T DE 3587003T DE 3587003 D1 DE3587003 D1 DE 3587003D1
- Authority
- DE
- Germany
- Prior art keywords
- arrangements
- nickel
- production
- hermetically sealed
- sealed housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title 2
- 229910000846 In alloy Inorganic materials 0.000 title 1
- 229910000990 Ni alloy Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12229—Intermediate article [e.g., blank, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60543684A | 1984-04-30 | 1984-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587003D1 true DE3587003D1 (de) | 1993-03-04 |
DE3587003T2 DE3587003T2 (de) | 1993-06-17 |
Family
ID=24423654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585103887T Expired - Fee Related DE3587003T2 (de) | 1984-04-30 | 1985-04-01 | Nickel/indium-legierung fuer die herstellung eines hermetisch verschlossenen gehaeuses fuer halbleiteranordnungen und andere elektronische anordnungen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4709122A (de) |
EP (1) | EP0160222B1 (de) |
JP (1) | JPH0665731B2 (de) |
CA (1) | CA1250963A (de) |
DE (1) | DE3587003T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4961633A (en) * | 1988-02-22 | 1990-10-09 | Xerox Corporation | VLSI optimized modulator |
US4990719A (en) * | 1989-07-13 | 1991-02-05 | Gte Products Corporation | Hermetically sealed chip carrier with metal cover having pre-poured glass window |
US5014418A (en) * | 1989-07-13 | 1991-05-14 | Gte Products Corporation | Method of forming a two piece chip carrier |
FR2664076A1 (fr) * | 1990-03-28 | 1992-01-03 | Schlumberger Ind Sa | Procede de fabrication d'une carte a memoire electronique. |
US5155067A (en) * | 1991-03-26 | 1992-10-13 | Micron Technology, Inc. | Packaging for a semiconductor die |
US5831836A (en) * | 1992-01-30 | 1998-11-03 | Lsi Logic | Power plane for semiconductor device |
US5386342A (en) * | 1992-01-30 | 1995-01-31 | Lsi Logic Corporation | Rigid backplane formed from a moisture resistant insulative material used to protect a semiconductor device |
US5807154A (en) * | 1995-12-21 | 1998-09-15 | Micron Display Technology, Inc. | Process for aligning and sealing field emission displays |
US5827102A (en) * | 1996-05-13 | 1998-10-27 | Micron Technology, Inc. | Low temperature method for evacuating and sealing field emission displays |
US7323142B2 (en) * | 2001-09-07 | 2008-01-29 | Medtronic Minimed, Inc. | Sensor substrate and method of fabricating same |
US6958446B2 (en) * | 2002-04-17 | 2005-10-25 | Agilent Technologies, Inc. | Compliant and hermetic solder seal |
US20050121420A1 (en) * | 2003-12-05 | 2005-06-09 | Tad Janicki | Electric welder, electrode and method of use thereof for spot-weld tacking eutectic solder to thin film depositions on non-conductive substrates |
US7947162B2 (en) * | 2006-05-09 | 2011-05-24 | Imec | Free standing single-crystal nanowire growth by electro-chemical deposition |
TWI355881B (en) * | 2008-10-13 | 2012-01-01 | Askey Computer Corp | Circuit board for communication product and manufa |
US7951280B2 (en) * | 2008-11-07 | 2011-05-31 | Solopower, Inc. | Gallium electroplating methods and electrolytes employing mixed solvents |
TW201034129A (en) * | 2009-03-11 | 2010-09-16 | High Conduction Scient Co Ltd | Frame-type copper- clad ceramic substrate and the manufacturing method thereof |
US8893361B2 (en) * | 2012-03-13 | 2014-11-25 | The Boeing Company | Method of bonding components to each other using exothermic reactions |
JP6450612B2 (ja) * | 2015-03-11 | 2019-01-09 | 日本特殊陶業株式会社 | 電子部品装置およびその製造方法 |
JP6499886B2 (ja) * | 2015-03-11 | 2019-04-10 | 田中貴金属工業株式会社 | 電子部品封止用キャップ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2458839A (en) * | 1944-04-19 | 1949-01-11 | Indium Corp America | Electrodeposition of indium and its alloys |
DE1621177B2 (de) * | 1967-12-08 | 1976-09-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur galvanischen herstellung von nickel-, kupfer-, zink-, indium-, zinn- und goldueberzuegen auf niob und niob-zirkon-legierungen |
US3874549A (en) * | 1972-05-26 | 1975-04-01 | Norman Hascoe | Hermetic sealing cover for a container for a semiconductor device |
US3823468A (en) * | 1972-05-26 | 1974-07-16 | N Hascoe | Method of fabricating an hermetically sealed container |
DE2401342C3 (de) * | 1974-01-16 | 1978-04-27 | Kim Isaewitsch Portnoj | Neutronenabsorbierende Legierung |
US4105861A (en) * | 1975-09-29 | 1978-08-08 | Semi-Alloys, Inc. | Hermetically sealed container for semiconductor and other electronic devices |
US4291815B1 (en) * | 1980-02-19 | 1998-09-29 | Semiconductor Packaging Materi | Ceramic lid assembly for hermetic sealing of a semiconductor chip |
DE3010076A1 (de) * | 1980-03-15 | 1981-09-24 | W.C. Heraeus Gmbh, 6450 Hanau | Halbzeug fuer die herstellung von metalldeckeln zum verschliessen von gehaeusen aus keramischem werkstoff |
-
1985
- 1985-04-01 DE DE8585103887T patent/DE3587003T2/de not_active Expired - Fee Related
- 1985-04-01 EP EP85103887A patent/EP0160222B1/de not_active Expired - Lifetime
- 1985-04-25 CA CA000480047A patent/CA1250963A/en not_active Expired
- 1985-04-30 JP JP60093542A patent/JPH0665731B2/ja not_active Expired - Lifetime
- 1985-12-30 US US06/814,698 patent/US4709122A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4709122A (en) | 1987-11-24 |
EP0160222B1 (de) | 1993-01-20 |
DE3587003T2 (de) | 1993-06-17 |
JPH0665731B2 (ja) | 1994-08-24 |
EP0160222A2 (de) | 1985-11-06 |
JPS60238433A (ja) | 1985-11-27 |
CA1250963A (en) | 1989-03-07 |
EP0160222A3 (en) | 1987-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |