DE3585112D1 - Integrierte optoelektrische anordnung. - Google Patents

Integrierte optoelektrische anordnung.

Info

Publication number
DE3585112D1
DE3585112D1 DE8585304959T DE3585112T DE3585112D1 DE 3585112 D1 DE3585112 D1 DE 3585112D1 DE 8585304959 T DE8585304959 T DE 8585304959T DE 3585112 T DE3585112 T DE 3585112T DE 3585112 D1 DE3585112 D1 DE 3585112D1
Authority
DE
Germany
Prior art keywords
arrangement
optoelectric
integrated
integrated optoelectric
optoelectric arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585304959T
Other languages
English (en)
Inventor
Masaru C O Patent Div Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3585112D1 publication Critical patent/DE3585112D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/10—Distribution of clock signals, e.g. skew
    • G06F1/105—Distribution of clock signals, e.g. skew in which the distribution is at least partially optical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
DE8585304959T 1984-09-03 1985-07-11 Integrierte optoelektrische anordnung. Expired - Lifetime DE3585112D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18280184A JPH069334B2 (ja) 1984-09-03 1984-09-03 光・電気集積化素子

Publications (1)

Publication Number Publication Date
DE3585112D1 true DE3585112D1 (de) 1992-02-20

Family

ID=16124656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585304959T Expired - Lifetime DE3585112D1 (de) 1984-09-03 1985-07-11 Integrierte optoelektrische anordnung.

Country Status (4)

Country Link
US (1) US4667212A (de)
EP (1) EP0174073B1 (de)
JP (1) JPH069334B2 (de)
DE (1) DE3585112D1 (de)

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JPS61156870A (ja) * 1984-12-28 1986-07-16 Nec Corp 平面光プリント板
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
JPH0191478A (ja) * 1987-10-02 1989-04-11 Nec Corp 光接続回路
JPH01109758A (ja) * 1987-10-23 1989-04-26 Hitachi Ltd 大規模論理集積回路
US4879250A (en) * 1988-09-29 1989-11-07 The Boeing Company Method of making a monolithic interleaved LED/PIN photodetector array
US4970381A (en) * 1989-04-28 1990-11-13 At&T Bell Laboratories Integrated optics facsimile apparatus
US5319182A (en) * 1992-03-04 1994-06-07 Welch Allyn, Inc. Integrated solid state light emitting and detecting array and apparatus employing said array
US5280184A (en) * 1992-04-08 1994-01-18 Georgia Tech Research Corporation Three dimensional integrated circuits with lift-off
WO1993021663A1 (en) * 1992-04-08 1993-10-28 Georgia Tech Research Corporation Process for lift-off of thin film materials from a growth substrate
US5406543A (en) * 1993-04-07 1995-04-11 Olympus Optical Co., Ltd. Optical head with semiconductor laser
US5753928A (en) * 1993-09-30 1998-05-19 Siemens Components, Inc. Monolithic optical emitter-detector
DE69421884T2 (de) * 1993-09-30 2000-05-11 Siemens Components, Inc. Linearer bidirektionaler Optokoppler
US5448077A (en) * 1993-09-30 1995-09-05 Siemens Components Inc. Monolithic optical emitter-detector having a control amplifier with a feedback signal
JPH07131063A (ja) * 1993-11-01 1995-05-19 Nec Corp マルチチップモジュール
AUPM512194A0 (en) * 1994-04-15 1994-05-12 Chulalongkorn University Amorphous semiconductor photocoupler
GB2326277A (en) * 1997-06-11 1998-12-16 Lsi Logic Corp Low skew signal distribution for integrated circuits
EP1074049B1 (de) * 1998-04-13 2006-07-12 Intel Corporation Verfahren und vorrichtung zur optischen taktverteilung in einer integrierten schaltung
US6202165B1 (en) * 1998-07-23 2001-03-13 Conexant Systems, Inc. Photonic clock distribution method and apparatus for electronic systems
US6214733B1 (en) 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US7962326B2 (en) * 2000-04-20 2011-06-14 Invention Machine Corporation Semantic answering system and method
JP2004503920A (ja) 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US20030215415A1 (en) * 2000-09-08 2003-11-20 The Procter & Gamble Company Hair conditioning compositions comprising particles
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
JP2002299598A (ja) * 2001-04-03 2002-10-11 Fujitsu Ltd 半導体装置
US20020181825A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Optical clock signal distribution
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
CN101854168A (zh) * 2010-04-06 2010-10-06 艾默生网络能源有限公司 一种光耦隔离通信电路

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US3914137A (en) * 1971-10-06 1975-10-21 Motorola Inc Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition
US3879606A (en) * 1973-09-24 1975-04-22 Texas Instruments Inc Light projection coupling of semiconductor type devices through the use of thermally grown or deposited SiO{HD 2 {B films
GB1493976A (en) * 1975-03-27 1977-12-07 Standard Telephones Cables Ltd Solid state relay devices
JPS5466788A (en) * 1977-08-09 1979-05-29 Omron Tateisi Electronics Co Photo coupler
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
JPS566480A (en) * 1979-06-27 1981-01-23 Fujitsu Ltd Semiconductor light emitting diode
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
JPS5776883A (en) * 1980-10-31 1982-05-14 Toshiba Corp Photocoupler
DE3135462A1 (de) * 1981-09-08 1983-09-01 AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang Monolithische eingangsstufe eines optischen empfaengers

Also Published As

Publication number Publication date
EP0174073B1 (de) 1992-01-08
JPS6161461A (ja) 1986-03-29
EP0174073A3 (en) 1986-12-17
JPH069334B2 (ja) 1994-02-02
EP0174073A2 (de) 1986-03-12
US4667212A (en) 1987-05-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee