DE3584305D1 - Verfahren zur herstellung von negativen schutzlackbildern. - Google Patents

Verfahren zur herstellung von negativen schutzlackbildern.

Info

Publication number
DE3584305D1
DE3584305D1 DE8585104228T DE3584305T DE3584305D1 DE 3584305 D1 DE3584305 D1 DE 3584305D1 DE 8585104228 T DE8585104228 T DE 8585104228T DE 3584305 T DE3584305 T DE 3584305T DE 3584305 D1 DE3584305 D1 DE 3584305D1
Authority
DE
Germany
Prior art keywords
images
protective lacquer
producing negative
negative protective
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585104228T
Other languages
English (en)
Inventor
Hiroshi Ito
Scott Arthur Macdonald
Robert Dennis Miller
Carlton Grant Willson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3584305D1 publication Critical patent/DE3584305D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8585104228T 1984-05-14 1985-04-11 Verfahren zur herstellung von negativen schutzlackbildern. Expired - Lifetime DE3584305D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/609,690 US4552833A (en) 1984-05-14 1984-05-14 Radiation sensitive and oxygen plasma developable resist

Publications (1)

Publication Number Publication Date
DE3584305D1 true DE3584305D1 (de) 1991-11-14

Family

ID=24441898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585104228T Expired - Lifetime DE3584305D1 (de) 1984-05-14 1985-04-11 Verfahren zur herstellung von negativen schutzlackbildern.

Country Status (4)

Country Link
US (1) US4552833A (de)
EP (1) EP0161476B1 (de)
JP (1) JPS60241225A (de)
DE (1) DE3584305D1 (de)

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US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4981909A (en) * 1985-03-19 1991-01-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
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US4751170A (en) * 1985-07-26 1988-06-14 Nippon Telegraph And Telephone Corporation Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US4663269A (en) * 1985-08-07 1987-05-05 Polytechnic Institute Of New York Method of forming highly sensitive photoresist film in the absence of water
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors
US4665006A (en) * 1985-12-09 1987-05-12 International Business Machines Corporation Positive resist system having high resistance to oxygen reactive ion etching
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
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US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
US4816112A (en) * 1986-10-27 1989-03-28 International Business Machines Corporation Planarization process through silylation
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NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
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JPH07120048B2 (ja) * 1987-10-13 1995-12-20 日本電信電話株式会社 パターン形成方法
JP2506133B2 (ja) * 1987-11-18 1996-06-12 日本電信電話株式会社 パタ―ン形成方法
US4996136A (en) * 1988-02-25 1991-02-26 At&T Bell Laboratories Radiation sensitive materials and devices made therewith
JP2521329B2 (ja) * 1988-07-04 1996-08-07 シャープ株式会社 半導体装置の製造方法
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US6051659A (en) * 1992-08-20 2000-04-18 International Business Machines Corporation Highly sensitive positive photoresist composition
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JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
US5217851A (en) * 1989-09-05 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Pattern forming method capable of providing an excellent pattern of high resolution power and high sensitivity
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
US5120629A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Positive-working photosensitive electrostatic master
DE59010396D1 (de) * 1990-04-27 1996-08-01 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
US5275913A (en) * 1990-05-08 1994-01-04 Industrial Technology Research Institute Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching
JPH04149441A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp パターン形成方法
DE4040117C2 (de) * 1990-12-13 1994-02-17 Fotochem Werke Gmbh Stahlenempfindliches Material für die Elektronenstrahl- und Röntgenstrahllithographie und Verfahren zur Trockenentwicklung des Materials
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JPH05150459A (ja) * 1991-05-24 1993-06-18 Nippon Paint Co Ltd レジストパターンの形成方法
US5304453A (en) * 1991-07-11 1994-04-19 Industrial Technology Research Institute Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
US5229256A (en) * 1991-12-06 1993-07-20 International Business Machines Corporation Process for generating positive-tone photoresist image
JP2559192B2 (ja) * 1992-04-07 1996-12-04 インターナショナル・ビジネス・マシーンズ・コーポレイション ヒドロキシ芳香族化合物の炭酸化物を生成させるための改良された方法
US5366852A (en) * 1992-09-21 1994-11-22 Shipley Company, Inc. Methods for treating photoresists
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
JP2654339B2 (ja) * 1992-11-24 1997-09-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性レジスト組成物及び基板上にレジスト像を形成する方法
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WO1995032455A1 (de) * 1994-05-25 1995-11-30 Siemens Aktiengesellschaft Trockenentwickelbarer positivresist
JP3277114B2 (ja) * 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
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US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
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Also Published As

Publication number Publication date
EP0161476B1 (de) 1991-10-09
EP0161476A2 (de) 1985-11-21
JPH0456978B2 (de) 1992-09-10
JPS60241225A (ja) 1985-11-30
US4552833A (en) 1985-11-12
EP0161476A3 (en) 1987-10-28

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