DE3581998D1 - Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung. - Google Patents
Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung.Info
- Publication number
- DE3581998D1 DE3581998D1 DE8585112674T DE3581998T DE3581998D1 DE 3581998 D1 DE3581998 D1 DE 3581998D1 DE 8585112674 T DE8585112674 T DE 8585112674T DE 3581998 T DE3581998 T DE 3581998T DE 3581998 D1 DE3581998 D1 DE 3581998D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- radiation detector
- ultraviolet radiation
- ultraviolet
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/658,961 US4614961A (en) | 1984-10-09 | 1984-10-09 | Tunable cut-off UV detector based on the aluminum gallium nitride material system |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581998D1 true DE3581998D1 (de) | 1991-04-11 |
Family
ID=24643466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585112674T Expired - Fee Related DE3581998D1 (de) | 1984-10-09 | 1985-10-07 | Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4614961A (de) |
EP (1) | EP0177918B1 (de) |
JP (1) | JPH0614561B2 (de) |
DE (1) | DE3581998D1 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62119196A (ja) * | 1985-11-18 | 1987-05-30 | Univ Nagoya | 化合物半導体の成長方法 |
JP2631286B2 (ja) * | 1987-01-31 | 1997-07-16 | 豊田合成 株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
JP2631285B2 (ja) * | 1987-01-31 | 1997-07-16 | 豊田合成 株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
US5218216A (en) * | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
JPS63188938A (ja) * | 1987-01-31 | 1988-08-04 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体の気相成長方法 |
US4967089A (en) * | 1987-11-19 | 1990-10-30 | Honeywell Inc. | Pulsed optical source |
US5270252A (en) * | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
JP2704181B2 (ja) * | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
JP3026087B2 (ja) * | 1989-03-01 | 2000-03-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
EP0444630B1 (de) * | 1990-02-28 | 1997-05-21 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US5047821A (en) * | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
DE4010570C5 (de) * | 1990-04-02 | 2005-06-02 | Siemens Ag | Verfahren zur Überwachung von Feuerungsanlagen und Anordnung zur Durchführung des Verfahrens |
US5146465A (en) * | 1991-02-01 | 1992-09-08 | Apa Optics, Inc. | Aluminum gallium nitride laser |
US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
US5192987A (en) * | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
EP0579897B1 (de) * | 1992-07-23 | 2003-10-15 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe |
US6130147A (en) * | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
IT1277856B1 (it) * | 1995-02-09 | 1997-11-12 | Univ Roma | Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale. |
US5598014A (en) * | 1995-02-28 | 1997-01-28 | Honeywell Inc. | High gain ultraviolet photoconductor based on wide bandgap nitrides |
US5677538A (en) * | 1995-07-07 | 1997-10-14 | Trustees Of Boston University | Photodetectors using III-V nitrides |
US5987132A (en) * | 1996-06-17 | 1999-11-16 | Verifone, Inc. | System, method and article of manufacture for conditionally accepting a payment method utilizing an extensible, flexible architecture |
US6734515B1 (en) * | 1998-09-18 | 2004-05-11 | Mitsubishi Cable Industries, Ltd. | Semiconductor light receiving element |
US6690700B2 (en) * | 1998-10-16 | 2004-02-10 | Agilent Technologies, Inc. | Nitride semiconductor device |
US6483130B1 (en) | 1999-03-24 | 2002-11-19 | Honeywell International Inc. | Back-illuminated heterojunction photodiode |
US6137123A (en) * | 1999-08-17 | 2000-10-24 | Honeywell International Inc. | High gain GaN/AlGaN heterojunction phototransistor |
KR20000030069A (ko) * | 1999-08-21 | 2000-06-05 | 이정욱 | 자외선 감지소자 |
AU2001261065B2 (en) * | 2000-04-28 | 2006-08-10 | Apa Enterprises, Inc. | Device and method for ultraviolet radiation monitoring |
US6787385B2 (en) | 2001-05-31 | 2004-09-07 | Midwest Research Institute | Method of preparing nitrogen containing semiconductor material |
US20070133001A1 (en) * | 2001-09-12 | 2007-06-14 | Honeywell International Inc. | Laser sensor having a block ring activity |
US7015457B2 (en) | 2002-03-18 | 2006-03-21 | Honeywell International Inc. | Spectrally tunable detector |
US7145165B2 (en) * | 2001-09-12 | 2006-12-05 | Honeywell International Inc. | Tunable laser fluid sensor |
US7196790B2 (en) * | 2002-03-18 | 2007-03-27 | Honeywell International Inc. | Multiple wavelength spectrometer |
US7470894B2 (en) * | 2002-03-18 | 2008-12-30 | Honeywell International Inc. | Multi-substrate package assembly |
US7276798B2 (en) * | 2002-05-23 | 2007-10-02 | Honeywell International Inc. | Integral topside vacuum package |
US7112830B2 (en) * | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
JP2007504682A (ja) * | 2003-05-09 | 2007-03-01 | クリー インコーポレイテッド | 高Al含量AlGaN拡散バリアを有するIII族窒化物電子素子構造 |
ITBA20030066A1 (it) * | 2003-12-22 | 2005-06-23 | I N F M Istituto Naz Per La Fisica Della Ma | Sistema ottico di rivelazione della concentrazione di prodotti di combustione |
US7531363B2 (en) * | 2003-12-30 | 2009-05-12 | Honeywell International Inc. | Particle detection using fluorescence |
US7902534B2 (en) * | 2004-09-28 | 2011-03-08 | Honeywell International Inc. | Cavity ring down system having a common input/output port |
US7586114B2 (en) * | 2004-09-28 | 2009-09-08 | Honeywell International Inc. | Optical cavity system having an orthogonal input |
US20060076502A1 (en) * | 2004-10-05 | 2006-04-13 | Apa Enterprises, Inc. | Method and apparatus for a photodetector responsive over a selectable wavelength range |
US7455565B2 (en) * | 2004-10-13 | 2008-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Fabrication of group III-nitride photocathode having Cs activation layer |
US7776636B2 (en) * | 2005-04-25 | 2010-08-17 | Cao Group, Inc. | Method for significant reduction of dislocations for a very high A1 composition A1GaN layer |
TWI293805B (en) * | 2006-01-24 | 2008-02-21 | Ind Tech Res Inst | Ultraviolet detector |
TW200729467A (en) * | 2006-01-26 | 2007-08-01 | Ind Tech Res Inst | Photo detector component and its manufacturing method |
US7656532B2 (en) * | 2006-04-18 | 2010-02-02 | Honeywell International Inc. | Cavity ring-down spectrometer having mirror isolation |
US7498645B2 (en) * | 2006-10-04 | 2009-03-03 | Iii-N Technology, Inc. | Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors |
US7649189B2 (en) * | 2006-12-04 | 2010-01-19 | Honeywell International Inc. | CRDS mirror for normal incidence fiber optic coupling |
US7663756B2 (en) * | 2008-07-21 | 2010-02-16 | Honeywell International Inc | Cavity enhanced photo acoustic gas sensor |
US7864326B2 (en) | 2008-10-30 | 2011-01-04 | Honeywell International Inc. | Compact gas sensor using high reflectance terahertz mirror and related system and method |
US8198590B2 (en) * | 2008-10-30 | 2012-06-12 | Honeywell International Inc. | High reflectance terahertz mirror and related method |
CA2653581A1 (en) | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
US8437000B2 (en) | 2010-06-29 | 2013-05-07 | Honeywell International Inc. | Multiple wavelength cavity ring down gas sensor |
US8269972B2 (en) | 2010-06-29 | 2012-09-18 | Honeywell International Inc. | Beam intensity detection in a cavity ring down sensor |
US8322191B2 (en) | 2010-06-30 | 2012-12-04 | Honeywell International Inc. | Enhanced cavity for a photoacoustic gas sensor |
US8143147B1 (en) | 2011-02-10 | 2012-03-27 | Intermolecular, Inc. | Methods and systems for forming thin films |
DE102014225632B3 (de) * | 2014-12-11 | 2016-03-31 | Forschungsverbund Berlin E.V. | Photodetektor und Vorrichtung zur Desinfektion von Wasser diesen umfassend |
US11021789B2 (en) | 2015-06-22 | 2021-06-01 | University Of South Carolina | MOCVD system injector for fast growth of AlInGaBN material |
CN112968073B (zh) * | 2021-02-01 | 2023-06-13 | 郑州大学 | 超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
US4095331A (en) * | 1976-11-04 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | Fabrication of an epitaxial layer diode in aluminum nitride on sapphire |
US4287527A (en) * | 1978-08-30 | 1981-09-01 | Bell Telephone Laboratories, Incorporated | Opto-electronic devices based on bulk crystals of complex semiconductors |
US4300149A (en) * | 1979-09-04 | 1981-11-10 | International Business Machines Corporation | Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements |
-
1984
- 1984-10-09 US US06/658,961 patent/US4614961A/en not_active Expired - Lifetime
-
1985
- 1985-10-07 DE DE8585112674T patent/DE3581998D1/de not_active Expired - Fee Related
- 1985-10-07 EP EP85112674A patent/EP0177918B1/de not_active Expired - Lifetime
- 1985-10-09 JP JP22593885A patent/JPH0614561B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0177918B1 (de) | 1991-03-06 |
JPH0614561B2 (ja) | 1994-02-23 |
US4614961A (en) | 1986-09-30 |
EP0177918A3 (en) | 1987-09-16 |
JPS6191977A (ja) | 1986-05-10 |
EP0177918A2 (de) | 1986-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |