DE3581898D1 - Verfahren und vorrichtung zur durchfuehrung einer trockenaetzung. - Google Patents

Verfahren und vorrichtung zur durchfuehrung einer trockenaetzung.

Info

Publication number
DE3581898D1
DE3581898D1 DE8585115567T DE3581898T DE3581898D1 DE 3581898 D1 DE3581898 D1 DE 3581898D1 DE 8585115567 T DE8585115567 T DE 8585115567T DE 3581898 T DE3581898 T DE 3581898T DE 3581898 D1 DE3581898 D1 DE 3581898D1
Authority
DE
Germany
Prior art keywords
carrying
dry wet
wet
dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585115567T
Other languages
English (en)
Inventor
Toru Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3581898D1 publication Critical patent/DE3581898D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
DE8585115567T 1984-12-06 1985-12-06 Verfahren und vorrichtung zur durchfuehrung einer trockenaetzung. Expired - Lifetime DE3581898D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59258134A JPS61136229A (ja) 1984-12-06 1984-12-06 ドライエツチング装置

Publications (1)

Publication Number Publication Date
DE3581898D1 true DE3581898D1 (de) 1991-04-04

Family

ID=17315984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585115567T Expired - Lifetime DE3581898D1 (de) 1984-12-06 1985-12-06 Verfahren und vorrichtung zur durchfuehrung einer trockenaetzung.

Country Status (4)

Country Link
US (1) US4659449A (de)
EP (1) EP0184220B1 (de)
JP (1) JPS61136229A (de)
DE (1) DE3581898D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4761199A (en) * 1985-04-10 1988-08-02 Canon Kabushiki Kaisha Shutter device for ion beam etching apparatus and such etching apparatus using same
JPH0789545B2 (ja) * 1986-04-23 1995-09-27 株式会社日立製作所 プラズマエッチング方法
JPH0834201B2 (ja) * 1986-05-06 1996-03-29 株式会社日立製作所 エツチング方法およびその装置
US4931209A (en) * 1986-09-25 1990-06-05 Crystaloid Electronics, Inc. Liquid crystalline materials and method of making
JPS63119237A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd エツチング方法
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
EP0457049A3 (en) * 1990-04-19 1992-01-22 Kabushiki Kaisha Toshiba Dry etching method
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
US5466942A (en) * 1991-07-04 1995-11-14 Kabushiki Kaisha Toshiba Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
JPH05234959A (ja) * 1991-08-16 1993-09-10 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5968845A (en) * 1996-02-13 1999-10-19 Matsushita Electric Industrial Co., Ltd. Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
JP2000514600A (ja) * 1996-07-03 2000-10-31 ティーガル コーポレイション 半導体ウェーハーをエッチングするための方法及びその装置
US6958295B1 (en) 1998-01-20 2005-10-25 Tegal Corporation Method for using a hard mask for critical dimension growth containment
US7091605B2 (en) * 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
KR100382720B1 (ko) * 2000-08-30 2003-05-09 삼성전자주식회사 반도체 식각 장치 및 이를 이용한 반도체 소자의 식각 방법
JP2005150632A (ja) * 2003-11-19 2005-06-09 Tokyo Electron Ltd 還元装置および還元方法
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044825B2 (ja) * 1976-04-19 1985-10-05 富士通株式会社 エツチング方法
JPS5352384A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method
JPS5848422A (ja) * 1981-09-17 1983-03-22 Nec Corp 複合ドライエツチング装置
US4481062A (en) * 1982-09-02 1984-11-06 Kaufman Harold R Electron bombardment ion sources
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
JPS59165422A (ja) * 1983-03-10 1984-09-18 Agency Of Ind Science & Technol ドライプロセス装置
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
US4496449A (en) * 1983-12-16 1985-01-29 Colromm, Inc. Electron beam etching of integrated circuit structures
US4478677A (en) * 1983-12-22 1984-10-23 International Business Machines Corporation Laser induced dry etching of vias in glass with non-contact masking

Also Published As

Publication number Publication date
EP0184220A3 (en) 1987-09-30
US4659449A (en) 1987-04-21
EP0184220B1 (de) 1991-02-27
JPS61136229A (ja) 1986-06-24
EP0184220A2 (de) 1986-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee