DE3574077D1 - Process for forming diffusion regions in a semiconductor substrate - Google Patents
Process for forming diffusion regions in a semiconductor substrateInfo
- Publication number
- DE3574077D1 DE3574077D1 DE8585906019T DE3574077T DE3574077D1 DE 3574077 D1 DE3574077 D1 DE 3574077D1 DE 8585906019 T DE8585906019 T DE 8585906019T DE 3574077 T DE3574077 T DE 3574077T DE 3574077 D1 DE3574077 D1 DE 3574077D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor substrate
- diffusion regions
- forming diffusion
- forming
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/680,034 US4666557A (en) | 1984-12-10 | 1984-12-10 | Method for forming channel stops in vertical semiconductor surfaces |
PCT/US1985/002302 WO1986003620A2 (en) | 1984-12-10 | 1985-11-25 | Process for forming diffusion regions in a semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3574077D1 true DE3574077D1 (en) | 1989-12-07 |
Family
ID=24729383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585906019T Expired DE3574077D1 (en) | 1984-12-10 | 1985-11-25 | Process for forming diffusion regions in a semiconductor substrate |
Country Status (5)
Country | Link |
---|---|
US (1) | US4666557A (de) |
EP (1) | EP0204752B1 (de) |
JP (1) | JPH0628283B2 (de) |
DE (1) | DE3574077D1 (de) |
WO (1) | WO1986003620A2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0259629A1 (de) * | 1986-08-19 | 1988-03-16 | Siemens Aktiengesellschaft | Verfahren zum Herstellen einer definierten Dotierung in den vertikalen Seitenwänden und den Böden von in Halbleitersubstrate eingebrachten Gräben |
US4782036A (en) * | 1986-08-29 | 1988-11-01 | Siemens Aktiengesellschaft | Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates |
JPH01147829A (ja) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | 半導体装置の製造方法 |
US5354710A (en) * | 1988-01-14 | 1994-10-11 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices using an adsorption enhancement layer |
US5057443A (en) * | 1988-06-29 | 1991-10-15 | Texas Instruments Incorporated | Method for fabricating a trench bipolar transistor |
IT1225625B (it) * | 1988-11-03 | 1990-11-22 | Sgs Thomson Microelectronics | Procedimento per la realizzazione di strutture di isolamento incassate nel substrato di silicio per dispositivi cmos ed nmos. |
US5008208A (en) * | 1988-12-07 | 1991-04-16 | Honeywell Inc. | Method of making planarized, self-aligned bipolar integrated circuits |
US5116778A (en) * | 1990-02-05 | 1992-05-26 | Advanced Micro Devices, Inc. | Dopant sources for cmos device |
JP2641781B2 (ja) * | 1990-02-23 | 1997-08-20 | シャープ株式会社 | 半導体素子分離領域の形成方法 |
JP2597022B2 (ja) * | 1990-02-23 | 1997-04-02 | シャープ株式会社 | 素子分離領域の形成方法 |
EP0445471A3 (en) * | 1990-03-06 | 1994-10-26 | Digital Equipment Corp | Method of forming isolation trenches in a semiconductor substrate |
EP0631305B1 (de) * | 1993-06-23 | 1998-04-15 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien |
EP0635884A1 (de) * | 1993-07-13 | 1995-01-25 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Grabens in einem Substrat und dessen Verwendung in der Smart-Power-Technologie |
US5406515A (en) * | 1993-12-01 | 1995-04-11 | International Business Machines Corporation | Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby |
DE4404757C2 (de) * | 1994-02-15 | 1998-08-20 | Siemens Ag | Verfahren zur Herstellung eines einem Graben benachbarten Diffusionsgebietes in einem Substrat |
KR0151051B1 (ko) * | 1995-05-30 | 1998-12-01 | 김광호 | 반도체장치의 절연막 형성방법 |
TW304293B (en) * | 1996-11-18 | 1997-05-01 | United Microelectronics Corp | Manufacturing method for shallow trench isolation |
US5851900A (en) * | 1997-04-28 | 1998-12-22 | Mosel Vitelic Inc. | Method of manufacturing a shallow trench isolation for a semiconductor device |
US6069058A (en) * | 1997-05-14 | 2000-05-30 | United Semiconductor Corp. | Shallow trench isolation for semiconductor devices |
US6001684A (en) * | 1997-06-04 | 1999-12-14 | Siemens Aktiengesellschaft | Method for forming a capacitor |
US6117719A (en) * | 1997-12-18 | 2000-09-12 | Advanced Micro Devices, Inc. | Oxide spacers as solid sources for gallium dopant introduction |
TW589708B (en) * | 2003-08-19 | 2004-06-01 | Nanya Technology Corp | Method for defining deep trench in substrate and multi-layer hard mask structure for defining the same |
US20070080403A1 (en) * | 2005-10-06 | 2007-04-12 | David Litfin | Low trigger voltage electrostatic discharge protection device |
KR100769146B1 (ko) * | 2006-08-17 | 2007-10-22 | 동부일렉트로닉스 주식회사 | 전기적 특성을 향상시키는 반도체 소자 및 그 제조 방법 |
US20090001481A1 (en) * | 2007-06-26 | 2009-01-01 | Ethan Harrison Cannon | Digital circuits having additional capacitors for additional stability |
US8129778B2 (en) * | 2009-12-02 | 2012-03-06 | Fairchild Semiconductor Corporation | Semiconductor devices and methods for making the same |
FR2978612B1 (fr) * | 2011-07-27 | 2013-08-16 | St Microelectronics Crolles 2 | Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede |
US9087872B2 (en) * | 2011-07-27 | 2015-07-21 | Stmicroelectronics (Crolles 2) Sas | Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method |
US10910223B2 (en) * | 2016-07-29 | 2021-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping through diffusion and epitaxy profile shaping |
EP3349239B1 (de) * | 2016-11-25 | 2020-04-08 | Shindengen Electric Manufacturing Co., Ltd. | Halbleiterbauelementherstellungsverfahren |
CN110233130A (zh) * | 2019-05-29 | 2019-09-13 | 长江存储科技有限责任公司 | 半导体结构、uhv器件及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5412791A (en) * | 1977-06-29 | 1979-01-30 | Tokyo Tokushu Densen Toryo | Apparatus for measuring heat softening temperature of wire coating |
US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
US4209350A (en) * | 1978-11-03 | 1980-06-24 | International Business Machines Corporation | Method for forming diffusions having narrow dimensions utilizing reactive ion etching |
JPS55127016A (en) * | 1979-03-26 | 1980-10-01 | Hitachi Ltd | Manufacturing of semiconductor device |
DE2951292A1 (de) * | 1979-12-20 | 1981-07-02 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum dotieren von siliciumkoerpern durch eindiffundieren von bor |
US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
US4407058A (en) * | 1981-05-22 | 1983-10-04 | International Business Machines Corporation | Method of making dense vertical FET's |
US4466178A (en) * | 1981-06-25 | 1984-08-21 | Rockwell International Corporation | Method of making extremely small area PNP lateral transistor by angled implant of deep trenches followed by refilling the same with dielectrics |
US4466180A (en) * | 1981-06-25 | 1984-08-21 | Rockwell International Corporation | Method of manufacturing punch through voltage regulator diodes utilizing shaping and selective doping |
US4379727A (en) * | 1981-07-08 | 1983-04-12 | International Business Machines Corporation | Method of laser annealing of subsurface ion implanted regions |
US4419810A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Self-aligned field effect transistor process |
US4569701A (en) * | 1984-04-05 | 1986-02-11 | At&T Bell Laboratories | Technique for doping from a polysilicon transfer layer |
-
1984
- 1984-12-10 US US06/680,034 patent/US4666557A/en not_active Expired - Lifetime
-
1985
- 1985-11-25 JP JP60505264A patent/JPH0628283B2/ja not_active Expired - Lifetime
- 1985-11-25 WO PCT/US1985/002302 patent/WO1986003620A2/en active IP Right Grant
- 1985-11-25 DE DE8585906019T patent/DE3574077D1/de not_active Expired
- 1985-11-25 EP EP85906019A patent/EP0204752B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
WO1986003620A3 (en) | 1986-07-31 |
EP0204752B1 (de) | 1989-11-02 |
JPS62501041A (ja) | 1987-04-23 |
US4666557A (en) | 1987-05-19 |
EP0204752A1 (de) | 1986-12-17 |
WO1986003620A2 (en) | 1986-06-19 |
JPH0628283B2 (ja) | 1994-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NCR INTERNATIONAL INC., DAYTON, OHIO, US |
|
8328 | Change in the person/name/address of the agent |
Free format text: KAHLER, K., DIPL.-ING., 8948 MINDELHEIM KAECK, J., DIPL.-ING. DIPL.-WIRTSCH.-ING., 8910 LANDSBERG FIENER, J., PAT.-ANWAELTE, 8948 MINDELHEIM |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AT&T GLOBAL INFORMATION SOLUTIONS INTERNATIONAL IN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DELAWAR |
|
8328 | Change in the person/name/address of the agent |
Free format text: V. BEZOLD & SOZIEN, 80799 MUENCHEN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR Owner name: NCR INTERNATIONAL, INC. (N.D.GES.D.STAATES DEL, US |