FR2978612B1 - Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede - Google Patents

Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede

Info

Publication number
FR2978612B1
FR2978612B1 FR1156861A FR1156861A FR2978612B1 FR 2978612 B1 FR2978612 B1 FR 2978612B1 FR 1156861 A FR1156861 A FR 1156861A FR 1156861 A FR1156861 A FR 1156861A FR 2978612 B1 FR2978612 B1 FR 2978612B1
Authority
FR
France
Prior art keywords
trench
isolation
making
semiconductor substrate
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1156861A
Other languages
English (en)
Other versions
FR2978612A1 (fr
Inventor
Laurent Favennec
Arnaud Tournier
Francois Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1156861A priority Critical patent/FR2978612B1/fr
Priority to US13/560,413 priority patent/US20130026546A1/en
Publication of FR2978612A1 publication Critical patent/FR2978612A1/fr
Application granted granted Critical
Publication of FR2978612B1 publication Critical patent/FR2978612B1/fr
Priority to US14/168,167 priority patent/US9087872B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
FR1156861A 2011-07-27 2011-07-27 Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede Expired - Fee Related FR2978612B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1156861A FR2978612B1 (fr) 2011-07-27 2011-07-27 Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede
US13/560,413 US20130026546A1 (en) 2011-07-27 2012-07-27 Integrated circuit comprising an isolating trench and corresponding method
US14/168,167 US9087872B2 (en) 2011-07-27 2014-01-30 Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1156861A FR2978612B1 (fr) 2011-07-27 2011-07-27 Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede

Publications (2)

Publication Number Publication Date
FR2978612A1 FR2978612A1 (fr) 2013-02-01
FR2978612B1 true FR2978612B1 (fr) 2013-08-16

Family

ID=44802232

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156861A Expired - Fee Related FR2978612B1 (fr) 2011-07-27 2011-07-27 Procede de realisation d'une tranchee d'isolation dans un substrat semi-conducteur, et structure, en particulier capteur d'image cmos, obtenue par ledit procede

Country Status (2)

Country Link
US (1) US20130026546A1 (fr)
FR (1) FR2978612B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2976726A1 (fr) 2011-06-16 2012-12-21 St Microelectronics Crolles 2 Circuit integre comprenant une tranchee d'isolement et procede correspondant
US9087872B2 (en) 2011-07-27 2015-07-21 Stmicroelectronics (Crolles 2) Sas Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method
KR102190653B1 (ko) 2014-04-21 2020-12-15 삼성전자주식회사 반도체 장치 및 그의 제조 방법
DE102015100671B4 (de) * 2015-01-19 2022-01-20 Infineon Technologies Ag Bauelement mit einem Halbleiterchip, der eine Dicing-Kante und eine Schutzstruktur umfasst
US11133305B2 (en) 2019-05-15 2021-09-28 International Business Machines Corporation Nanosheet P-type transistor with oxygen reservoir

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666557A (en) * 1984-12-10 1987-05-19 Ncr Corporation Method for forming channel stops in vertical semiconductor surfaces
US6177333B1 (en) * 1999-01-14 2001-01-23 Micron Technology, Inc. Method for making a trench isolation for semiconductor devices
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors

Also Published As

Publication number Publication date
US20130026546A1 (en) 2013-01-31
FR2978612A1 (fr) 2013-02-01

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