DE3573044D1 - Single development step, dual layer photoresist photolithographic process - Google Patents

Single development step, dual layer photoresist photolithographic process

Info

Publication number
DE3573044D1
DE3573044D1 DE8585102834T DE3573044T DE3573044D1 DE 3573044 D1 DE3573044 D1 DE 3573044D1 DE 8585102834 T DE8585102834 T DE 8585102834T DE 3573044 T DE3573044 T DE 3573044T DE 3573044 D1 DE3573044 D1 DE 3573044D1
Authority
DE
Germany
Prior art keywords
development step
dual layer
photolithographic process
layer photoresist
single development
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585102834T
Other languages
English (en)
Inventor
Edward Carmine Fredericks
Herbert Louis Greenhaus
Madan Mohan Nanda
Giorgio Giulio Via
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3573044D1 publication Critical patent/DE3573044D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8585102834T 1984-03-16 1985-03-13 Single development step, dual layer photoresist photolithographic process Expired DE3573044D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/590,092 US4567132A (en) 1984-03-16 1984-03-16 Multi-level resist image reversal lithography process

Publications (1)

Publication Number Publication Date
DE3573044D1 true DE3573044D1 (en) 1989-10-19

Family

ID=24360841

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585102834T Expired DE3573044D1 (en) 1984-03-16 1985-03-13 Single development step, dual layer photoresist photolithographic process

Country Status (4)

Country Link
US (1) US4567132A (de)
EP (1) EP0154979B1 (de)
JP (1) JPS60195934A (de)
DE (1) DE3573044D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX170270B (es) * 1984-06-01 1993-08-11 Rohm & Haas Imagenes sobre una superficie y un metodo para formar imagenes positivas y negativas termicamente estables sobre una superficie
DE3571161D1 (en) * 1985-03-22 1989-07-27 Ibm Deutschland Lift-off mask production process and use of the mask
US4670297A (en) * 1985-06-21 1987-06-02 Raytheon Company Evaporated thick metal and airbridge interconnects and method of manufacture
JPS6286823A (ja) * 1985-10-14 1987-04-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
JP2598059B2 (ja) * 1987-03-27 1997-04-09 ホーセル グラフィック インダストリーズ リミッティッド 露光式石版の製造方法
US4814258A (en) * 1987-07-24 1989-03-21 Motorola Inc. PMGI bi-layer lift-off process
US4814243A (en) * 1987-09-08 1989-03-21 American Telephone And Telegraph Company Thermal processing of photoresist materials
US4837097A (en) * 1987-12-17 1989-06-06 Xerox Corporation Optical Shield for liquid crystal devices and method of fabrication
US5122440A (en) * 1988-09-06 1992-06-16 Chien Chung Ping Ultraviolet curing of photosensitive polyimides
US5286609A (en) * 1988-11-01 1994-02-15 Yamatoya & Co., Ltd. Process for the formation of a negative resist pattern from a composition comprising a diazoquinone compound and an imidazole and having as a heat step the use of a hot water containing spray
GB2230871A (en) * 1989-04-11 1990-10-31 Coates Brothers Plc Making metal patterns.
JPH077067A (ja) * 1993-12-13 1995-01-10 Tokyo Electron Ltd レジスト処理装置およびレジスト処理方法
GB2291207B (en) * 1994-07-14 1998-03-25 Hyundai Electronics Ind Method for forming resist patterns
JPH08172102A (ja) * 1994-12-20 1996-07-02 Murata Mfg Co Ltd 半導体装置の製造方法
US5722162A (en) * 1995-10-12 1998-03-03 Fujitsu Limited Fabrication procedure for a stable post
US5789140A (en) * 1996-04-25 1998-08-04 Fujitsu Limited Method of forming a pattern or via structure utilizing supplemental electron beam exposure and development to remove image residue
US6150072A (en) * 1997-08-22 2000-11-21 Siemens Microelectronics, Inc. Method of manufacturing a shallow trench isolation structure for a semiconductor device
US6358672B2 (en) * 1998-02-05 2002-03-19 Samsung Electronics Co., Ltd. Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist
US6107202A (en) * 1998-09-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation photoresist stripping method to eliminate photoresist extrusion after alloy
SE515785C2 (sv) * 2000-02-23 2001-10-08 Obducat Ab Anordning för homogen värmning av ett objekt och användning av anordningen
JP4314320B2 (ja) * 2002-04-10 2009-08-12 三菱電機株式会社 化合物半導体装置の製造方法
US7221093B2 (en) * 2002-06-10 2007-05-22 Institute Of Materials Research And Engineering Patterning of electrodes in OLED devices
US6773869B1 (en) * 2003-04-24 2004-08-10 Lexmark International, Inc. Inkjet printhead nozzle plate
JP3710795B2 (ja) * 2003-05-16 2005-10-26 東京応化工業株式会社 ネガ型ホトレジスト組成物
ITTO20030730A1 (it) 2003-09-23 2005-03-24 Infm Istituto Naz Per La Fisi Ca Della Mater Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.
US7892903B2 (en) * 2004-02-23 2011-02-22 Asml Netherlands B.V. Device manufacturing method and substrate comprising multiple resist layers
DE102007006640A1 (de) * 2007-02-06 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen einer Struktur auf ein Halbleiterbauelement
US7862987B2 (en) * 2007-11-20 2011-01-04 International Business Machines Corporation Method for forming an electrical structure comprising multiple photosensitive materials
US8993218B2 (en) * 2013-02-20 2015-03-31 Taiwan Semiconductor Manufacturing Company Limited Photo resist (PR) profile control
CN104091767B (zh) * 2014-06-25 2016-11-02 京东方科技集团股份有限公司 离子注入的监控方法
TWI717829B (zh) * 2019-09-10 2021-02-01 國立交通大學 製造iii-v族半導體裝置的互連件之方法，及iii-v族半導體裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702243A (en) * 1950-06-17 1955-02-15 Azoplate Corp Light-sensitive photographic element and process of producing printing plates
US3152900A (en) * 1958-11-14 1964-10-13 Rca Corp Art of making electron-sensitive mosaic screens
NL255517A (de) * 1959-09-04
BE789951A (fr) * 1971-10-14 1973-04-11 Hoechst Co American Procede pour produire des images au moyen d'une couche photosensible
DE2529054C2 (de) * 1975-06-30 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4238559A (en) * 1978-08-24 1980-12-09 International Business Machines Corporation Two layer resist system
US4352870A (en) * 1979-11-27 1982-10-05 Bell Telephone Laboratories, Incorporated High resolution two-layer resists
JPS5732635A (en) * 1980-08-07 1982-02-22 Nec Corp Production of semiconductor device
US4373018A (en) * 1981-06-05 1983-02-08 Bell Telephone Laboratories, Incorporated Multiple exposure microlithography patterning method
US4398964A (en) * 1981-12-10 1983-08-16 Signetics Corporation Method of forming ion implants self-aligned with a cut

Also Published As

Publication number Publication date
EP0154979A3 (en) 1986-07-30
EP0154979B1 (de) 1989-09-13
US4567132A (en) 1986-01-28
EP0154979A2 (de) 1985-09-18
JPS60195934A (ja) 1985-10-04
JPH0147008B2 (de) 1989-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee