DE3572085D1 - Method of selectively forming an insulation layer - Google Patents

Method of selectively forming an insulation layer

Info

Publication number
DE3572085D1
DE3572085D1 DE8585303599T DE3572085T DE3572085D1 DE 3572085 D1 DE3572085 D1 DE 3572085D1 DE 8585303599 T DE8585303599 T DE 8585303599T DE 3572085 T DE3572085 T DE 3572085T DE 3572085 D1 DE3572085 D1 DE 3572085D1
Authority
DE
Germany
Prior art keywords
insulation layer
selectively forming
selectively
forming
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585303599T
Other languages
English (en)
Inventor
Keiji C O Patent Divis Horioka
Haruo C O Patent Divisio Okano
Makoto C O Patent Divis Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59105999A external-priority patent/JPS60250634A/ja
Priority claimed from JP14442484A external-priority patent/JPS6124238A/ja
Priority claimed from JP14442384A external-priority patent/JPS6124237A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3572085D1 publication Critical patent/DE3572085D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/04—Treatment of selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
DE8585303599T 1984-05-25 1985-05-22 Method of selectively forming an insulation layer Expired DE3572085D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59105999A JPS60250634A (ja) 1984-05-25 1984-05-25 薄膜選択成長方法
JP14442484A JPS6124238A (ja) 1984-07-13 1984-07-13 酸化物薄膜の選択形成方法
JP14442384A JPS6124237A (ja) 1984-07-13 1984-07-13 選択酸化膜形成方法

Publications (1)

Publication Number Publication Date
DE3572085D1 true DE3572085D1 (en) 1989-09-07

Family

ID=27310629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303599T Expired DE3572085D1 (en) 1984-05-25 1985-05-22 Method of selectively forming an insulation layer

Country Status (3)

Country Link
US (1) US4595601A (de)
EP (1) EP0162711B1 (de)
DE (1) DE3572085D1 (de)

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Publication number Priority date Publication date Assignee Title
JPS61187237A (ja) * 1985-02-14 1986-08-20 Toshiba Corp パタ−ン形成方法
DE3680623D1 (de) * 1985-02-28 1991-09-05 Sony Corp Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.
US4987008A (en) * 1985-07-02 1991-01-22 Semiconductor Energy Laboratory Co., Ltd. Thin film formation method
US5753542A (en) 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
JPS6245035A (ja) * 1985-08-23 1987-02-27 Hitachi Ltd 半導体装置の製造装置
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPS62104438U (de) * 1985-12-23 1987-07-03
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
EP0254651B1 (de) * 1986-06-28 1991-09-04 Nihon Shinku Gijutsu Kabushiki Kaisha Verfahren und Vorrichtung zum Beschichten unter Anwendung einer CVD-Beschichtungstechnik
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
EP0268301B1 (de) * 1986-11-20 1993-09-15 Nec Corporation Verfahren und Vorrichtung um eine Linie auf einem strukturierten Substrat zu schreiben
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
JP2545897B2 (ja) * 1987-12-11 1996-10-23 日本電気株式会社 光ｃｖｄ装置
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
KR940000906B1 (ko) * 1988-11-21 1994-02-04 가부시키가이샤 도시바 반도체장치의 제조방법
US5008215A (en) * 1989-07-07 1991-04-16 Industrial Technology Research Institute Process for preparing high sensitivity semiconductive magnetoresistance element
JP2974376B2 (ja) 1990-06-01 1999-11-10 キヤノン株式会社 半導体装置の製造方法
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US5387546A (en) * 1992-06-22 1995-02-07 Canon Sales Co., Inc. Method for manufacturing a semiconductor device
US5352330A (en) * 1992-09-30 1994-10-04 Texas Instruments Incorporated Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
DE4440386A1 (de) * 1994-11-11 1996-05-15 Pacesetter Ab Elektroden für medizinische Anwendungen
JP3080867B2 (ja) 1995-09-25 2000-08-28 日本電気株式会社 Ｓｏｉ基板の製造方法
US5738909A (en) * 1996-01-10 1998-04-14 Micron Technology, Inc. Method of forming high-integrity ultrathin oxides
TW436980B (en) * 1998-07-08 2001-05-28 United Microelectronics Corp Method of local oxidation
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
US6291302B1 (en) * 2000-01-14 2001-09-18 Advanced Micro Devices, Inc. Selective laser anneal process using highly reflective aluminum mask
JP3586678B2 (ja) * 2002-04-12 2004-11-10 エルピーダメモリ株式会社 エッチング方法
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
JP3932181B2 (ja) * 2002-07-10 2007-06-20 雄二 高桑 基板の表面処理方法および装置
US7622338B2 (en) 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7977253B2 (en) * 2004-08-31 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8088223B2 (en) * 2005-03-10 2012-01-03 Asm America, Inc. System for control of gas injectors
JP5052071B2 (ja) * 2006-08-25 2012-10-17 株式会社明電舎 酸化膜形成方法とその装置
KR20180128901A (ko) * 2016-03-25 2018-12-04 니폰 제온 가부시키가이샤 플라즈마 에칭 방법

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US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
EP0030798B1 (de) * 1979-12-17 1983-12-28 Hughes Aircraft Company Verfahren zum Niederschlagen von Oxydschichten durch photochemischen Dampfniederschlag bei niedrigen Temperaturen
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法
DE3335126A1 (de) * 1983-09-28 1985-04-11 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur chemischen gasphasenabscheidung oxidischer partikel

Also Published As

Publication number Publication date
EP0162711A3 (en) 1986-05-28
US4595601A (en) 1986-06-17
EP0162711A2 (de) 1985-11-27
EP0162711B1 (de) 1989-08-02

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