DE3570808D1 - Self turnoff type semiconductor switching device - Google Patents

Self turnoff type semiconductor switching device

Info

Publication number
DE3570808D1
DE3570808D1 DE8585102347T DE3570808T DE3570808D1 DE 3570808 D1 DE3570808 D1 DE 3570808D1 DE 8585102347 T DE8585102347 T DE 8585102347T DE 3570808 T DE3570808 T DE 3570808T DE 3570808 D1 DE3570808 D1 DE 3570808D1
Authority
DE
Germany
Prior art keywords
turnoff
self
type semiconductor
switching device
semiconductor switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585102347T
Other languages
English (en)
Inventor
Junichi C O Patent Divisi Miwa
Minoru C O Patent Divisio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3570808D1 publication Critical patent/DE3570808D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8585102347T 1984-10-08 1985-03-01 Self turnoff type semiconductor switching device Expired DE3570808D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59209767A JPS6188563A (ja) 1984-10-08 1984-10-08 半導体スイツチ

Publications (1)

Publication Number Publication Date
DE3570808D1 true DE3570808D1 (en) 1989-07-06

Family

ID=16578278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585102347T Expired DE3570808D1 (en) 1984-10-08 1985-03-01 Self turnoff type semiconductor switching device

Country Status (4)

Country Link
US (1) US4635086A (de)
EP (1) EP0177665B1 (de)
JP (1) JPS6188563A (de)
DE (1) DE3570808D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
JP2760984B2 (ja) * 1987-02-26 1998-06-04 株式会社東芝 絶縁ゲート型サイリスタ
JP2590168B2 (ja) * 1987-02-26 1997-03-12 株式会社東芝 サイリスタの駆動方法
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
JPS64759A (en) * 1987-03-31 1989-01-05 Toshiba Corp Semiconductor for two-way controlled rectification
JPH0795592B2 (ja) * 1987-04-14 1995-10-11 株式会社豊田中央研究所 静電誘導型半導体装置
EP0308667B1 (de) * 1987-09-23 1994-05-25 Siemens Aktiengesellschaft Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
JPH01286465A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 双方向制御整流半導体装置
DE3942490C2 (de) * 1989-12-22 1994-03-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
DE4240027A1 (de) * 1992-11-28 1994-06-01 Asea Brown Boveri MOS-gesteuerte Diode
US5757037A (en) * 1995-02-01 1998-05-26 Silicon Power Corporation Power thyristor with MOS gated turn-off and MOS-assised turn-on

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.
JPS4728450U (de) * 1971-04-14 1972-12-01
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
DE2835076A1 (de) * 1978-08-10 1980-03-13 Siemens Ag Thyristor
DE2835143A1 (de) * 1978-08-10 1980-03-13 Siemens Ag Thyristor
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
JPS56110263A (en) * 1980-02-04 1981-09-01 Oki Electric Ind Co Ltd Thyristor element
DE3118347A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
EP0065346A3 (de) * 1981-05-20 1983-08-31 Reliance Electric Company Halbleiter-Schaltungsanordnung
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung

Also Published As

Publication number Publication date
JPS6188563A (ja) 1986-05-06
EP0177665A1 (de) 1986-04-16
EP0177665B1 (de) 1989-05-31
US4635086A (en) 1987-01-06

Similar Documents

Publication Publication Date Title
EP0140349A3 (en) Semiconductor switching device
IE820818L (en) Semiconductor switching
DE3475374D1 (en) Switching device
EP0157905A3 (en) Semiconductor device
GB8400959D0 (en) Semiconductor device
EP0159273A3 (en) Semiconductor device
GB2167229B (en) Semiconductor devices
GB8513412D0 (en) Semiconductor device
GB2166904B (en) Semiconductor devices
EP0183474A3 (en) Semiconductor device
GB8508865D0 (en) Switching semiconductor devices
DE3570808D1 (en) Self turnoff type semiconductor switching device
GB8508243D0 (en) Semiconductor device
DE3267132D1 (en) Semiconductor switching device
EP0152805A3 (en) Semiconductor device
GB8403698D0 (en) Semiconductor device fabrication
GB8518604D0 (en) Semiconductor device
GB8524334D0 (en) Switching device
EP0165419A3 (en) Buried-gate structure-type semiconductor switching device
DE3564229D1 (en) Switching device
KR930009808B1 (en) Semiconductor device
GB2166588B (en) Buried-resistance semiconductor devices
GB8817574D0 (en) Semiconductor switching device
GB2199846B (en) Semiconductor device
DE3479627D1 (en) Semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)