DE3563224D1 - Apparatus for plasma-assisted deposition of thin films - Google Patents
Apparatus for plasma-assisted deposition of thin filmsInfo
- Publication number
- DE3563224D1 DE3563224D1 DE8585302864T DE3563224T DE3563224D1 DE 3563224 D1 DE3563224 D1 DE 3563224D1 DE 8585302864 T DE8585302864 T DE 8585302864T DE 3563224 T DE3563224 T DE 3563224T DE 3563224 D1 DE3563224 D1 DE 3563224D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- thin films
- assisted deposition
- assisted
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/606,014 US4514437A (en) | 1984-05-02 | 1984-05-02 | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3563224D1 true DE3563224D1 (en) | 1988-07-14 |
Family
ID=24426144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585302864T Expired DE3563224D1 (en) | 1984-05-02 | 1985-04-24 | Apparatus for plasma-assisted deposition of thin films |
Country Status (5)
Country | Link |
---|---|
US (1) | US4514437A (de) |
EP (1) | EP0161088B1 (de) |
JP (1) | JPS60243268A (de) |
CA (1) | CA1242165A (de) |
DE (1) | DE3563224D1 (de) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4691662A (en) * | 1983-02-28 | 1987-09-08 | Michigan State University | Dual plasma microwave apparatus and method for treating a surface |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
JPS6113626A (ja) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | プラズマ処理装置 |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US4728528A (en) * | 1985-02-18 | 1988-03-01 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4778692A (en) * | 1985-02-20 | 1988-10-18 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4784874A (en) * | 1985-02-20 | 1988-11-15 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
DE3521053A1 (de) * | 1985-06-12 | 1986-12-18 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum aufbringen duenner schichten auf ein substrat |
JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPH0734332B2 (ja) * | 1986-03-12 | 1995-04-12 | 株式会社ト−ビ | 透明導電性フイルムの製造方法 |
EP0263880B1 (de) * | 1986-03-12 | 1992-09-30 | Tobi Co., Ltd. | Kontinuierliche plattierungsanordnung eines schnell bewegenden films |
JPH0618176B2 (ja) * | 1986-03-14 | 1994-03-09 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体製造装置 |
DE3627151A1 (de) * | 1986-08-11 | 1988-02-18 | Leybold Heraeus Gmbh & Co Kg | Verfahren und vorrichtung zum reaktiven aufdampfen von metallverbindungen |
US4842705A (en) * | 1987-06-04 | 1989-06-27 | Siemens Aktiengesellschaft | Method for manufacturing transparent conductive indium-tin oxide layers |
KR910007382B1 (ko) * | 1987-08-07 | 1991-09-25 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 재료 및 초전도 박막의 제조방법 |
US4859253A (en) * | 1988-07-20 | 1989-08-22 | International Business Machines Corporation | Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface |
US5236895A (en) * | 1988-11-24 | 1993-08-17 | Kawasaki Jukogyo Kabushiki Kaisha | Production of oxide superconducting films by laser sputtering using N22 |
JP2896193B2 (ja) * | 1989-07-27 | 1999-05-31 | 株式会社東芝 | 酸化物結晶配向膜の製造方法及び酸化物結晶配向膜並びに光磁気記録媒体 |
EP0410627A1 (de) * | 1989-07-27 | 1991-01-30 | Kabushiki Kaisha Toshiba | Oxidfilm mit bevorzugter Kristallausrichtung, Verfahren zu dessen Herstellung und magnetooptisches Aufzeichnungsmaterial |
US5601652A (en) * | 1989-08-03 | 1997-02-11 | United Technologies Corporation | Apparatus for applying ceramic coatings |
US5087477A (en) * | 1990-02-05 | 1992-02-11 | United Technologies Corporation | Eb-pvd method for applying ceramic coatings |
US5045346A (en) * | 1990-07-31 | 1991-09-03 | Gte Laboratories Incorporated | Method of depositing fluorinated silicon nitride |
US5256854A (en) * | 1990-12-18 | 1993-10-26 | Massachusetts Institute Of Technology | Tunable plasma method and apparatus using radio frequency heating and electron beam irradiation |
JPH07114218B2 (ja) * | 1991-01-09 | 1995-12-06 | 株式会社東芝 | 微小箇所の電気接続方法及び該方法により形成された半導体装置 |
DE4128547A1 (de) * | 1991-08-28 | 1993-03-04 | Leybold Ag | Verfahren und vorrichtung fuer die herstellung einer entspiegelungsschicht auf linsen |
CH683776A5 (de) * | 1991-12-05 | 1994-05-13 | Alusuisse Lonza Services Ag | Beschichten einer Substratfläche mit einer Permeationssperre. |
DE4236264C1 (de) * | 1992-10-27 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | |
AT400040B (de) * | 1993-06-02 | 1995-09-25 | Andritz Patentverwaltung | Verfahren und vorrichtung zur beschichtung von metallsubstraten, insbesondere stahl- oder aluminiumbblechen in bandform |
US5397920A (en) * | 1994-03-24 | 1995-03-14 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
DE4427581A1 (de) * | 1994-08-04 | 1996-02-08 | Leybold Ag | Verfahren zum Aufbringen einer transparenten Metalloxidschicht auf eine Folie |
EP0784102B1 (de) * | 1996-01-10 | 2001-12-12 | Alcan Technology & Management AG | Verfahren und Vorrichtung zum Beschichten einer Substratfläche |
TW460597B (en) | 1997-03-27 | 2001-10-21 | Applied Materials Inc | A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation |
US5925225A (en) * | 1997-03-27 | 1999-07-20 | Applied Materials, Inc. | Method of producing smooth titanium nitride films having low resistivity |
JPH1171676A (ja) * | 1997-06-26 | 1999-03-16 | General Electric Co <Ge> | プラズマ活性形蒸発法による二酸化珪素の付着法 |
US5882399A (en) * | 1997-08-23 | 1999-03-16 | Applied Materials, Inc. | Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect |
US20050272254A1 (en) * | 1997-11-26 | 2005-12-08 | Applied Materials, Inc. | Method of depositing low resistivity barrier layers for copper interconnects |
JP4947834B2 (ja) * | 1997-11-26 | 2012-06-06 | アプライド マテリアルズ インコーポレイテッド | ダメージフリー被覆刻設堆積法 |
US7253109B2 (en) * | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
US6184571B1 (en) | 1998-10-27 | 2001-02-06 | Micron Technology, Inc. | Method and apparatus for endpointing planarization of a microelectronic substrate |
ITRM20010751A1 (it) * | 2001-12-20 | 2003-06-20 | Ct Sviluppo Materiali Spa | Composito a bassa emissivita' nell'infrarosso medio e lontano ed a bassa riflettivita' nel visibile e infrarosso vicino. |
US6770333B2 (en) * | 2002-04-30 | 2004-08-03 | General Electric Company | Method of controlling temperature during coating deposition by EBPVD |
US7509734B2 (en) * | 2003-03-03 | 2009-03-31 | United Technologies Corporation | Repairing turbine element |
GB0307745D0 (en) * | 2003-04-03 | 2003-05-07 | Microemissive Displays Ltd | Method and apparatus for depositing material on a substrate |
EP1737044B1 (de) * | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphes oxid und dünnfilmtransistor |
US7504154B2 (en) * | 2005-03-23 | 2009-03-17 | Lockheed Martin Corporation | Moisture barrier coatings for infrared salt optics |
US8197898B2 (en) * | 2005-03-29 | 2012-06-12 | Tokyo Electron Limited | Method and system for depositing a layer from light-induced vaporization of a solid precursor |
US7700166B2 (en) * | 2005-06-06 | 2010-04-20 | Createc Fischer & Co. Gmbh | Process for evaporating high-melting materials |
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
US8828504B2 (en) * | 2010-12-17 | 2014-09-09 | International Business Machines Corporation | Deposition of hydrogenated thin film |
CN105895830A (zh) * | 2016-04-27 | 2016-08-24 | 华南师范大学 | 一种有机发光二极管ito电极的制备方法 |
US11908773B2 (en) * | 2019-07-30 | 2024-02-20 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Element module |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913520A (en) * | 1972-08-14 | 1975-10-21 | Precision Thin Film Corp | High vacuum deposition apparatus |
DE2705225C2 (de) * | 1976-06-07 | 1983-03-24 | Nobuo Tokyo Nishida | Ornamentteil für Uhren usw. |
US4336277A (en) * | 1980-09-29 | 1982-06-22 | The Regents Of The University Of California | Transparent electrical conducting films by activated reactive evaporation |
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
EP0060651B1 (de) * | 1981-03-16 | 1986-07-30 | Energy Conversion Devices, Inc. | Vorrichtung mit einer Kathode zum kontinuierlichen Niederschlagen eines amorphen Materials |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
GB8324779D0 (en) * | 1982-09-29 | 1983-10-19 | Nat Res Dev | Depositing film onto substrate |
US4605565A (en) * | 1982-12-09 | 1986-08-12 | Energy Conversion Devices, Inc. | Method of depositing a highly conductive, highly transmissive film |
-
1984
- 1984-05-02 US US06/606,014 patent/US4514437A/en not_active Expired - Lifetime
-
1985
- 1985-04-23 CA CA000479799A patent/CA1242165A/en not_active Expired
- 1985-04-24 EP EP85302864A patent/EP0161088B1/de not_active Expired
- 1985-04-24 DE DE8585302864T patent/DE3563224D1/de not_active Expired
- 1985-05-01 JP JP60094556A patent/JPS60243268A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0161088A1 (de) | 1985-11-13 |
JPS60243268A (ja) | 1985-12-03 |
CA1242165A (en) | 1988-09-20 |
US4514437A (en) | 1985-04-30 |
EP0161088B1 (de) | 1988-06-08 |
JPH0475314B2 (de) | 1992-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |