DE3563077D1 - An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (lec) process - Google Patents

An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (lec) process

Info

Publication number
DE3563077D1
DE3563077D1 DE8585301458T DE3563077T DE3563077D1 DE 3563077 D1 DE3563077 D1 DE 3563077D1 DE 8585301458 T DE8585301458 T DE 8585301458T DE 3563077 T DE3563077 T DE 3563077T DE 3563077 D1 DE3563077 D1 DE 3563077D1
Authority
DE
Germany
Prior art keywords
czochraiski
lec
compound
manufacturing
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585301458T
Other languages
English (en)
Inventor
Masayuki C O Patent D Watanabe
Sadao C O Patent Divis Yashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3563077D1 publication Critical patent/DE3563077D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8585301458T 1984-04-23 1985-03-04 An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (lec) process Expired DE3563077D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59080211A JPS60226492A (ja) 1984-04-23 1984-04-23 化合物半導体単結晶の製造装置

Publications (1)

Publication Number Publication Date
DE3563077D1 true DE3563077D1 (en) 1988-07-07

Family

ID=13712049

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301458T Expired DE3563077D1 (en) 1984-04-23 1985-03-04 An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (lec) process

Country Status (4)

Country Link
US (1) US4668481A (de)
EP (1) EP0166500B1 (de)
JP (1) JPS60226492A (de)
DE (1) DE3563077D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207992A (en) * 1986-12-26 1993-05-04 Toshiba Ceramics Co., Ltd. Silicon single crystal pulling-up apparatus
JPS63242995A (ja) * 1987-03-30 1988-10-07 Toshiba Corp 化合物半導体単結晶の製造装置
JPS63242994A (ja) * 1987-03-30 1988-10-07 Toshiba Corp 化合物半導体単結晶の製造装置
GB8715327D0 (en) * 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
EP0476389A3 (en) * 1990-08-30 1993-06-09 The Furukawa Electric Co., Ltd. Method of growing single crystal of compound semiconductors
JP5187846B2 (ja) * 2006-03-23 2013-04-24 日本碍子株式会社 窒化物単結晶の製造方法および装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301543A (de) * 1962-12-10
GB1055059A (en) * 1963-11-27 1967-01-11 Mullard Ltd Improvements in crystal growing
JPS6024078B2 (ja) * 1977-09-05 1985-06-11 株式会社東芝 ３−５族化合物半導体単結晶の製造装置
JPS5850957B2 (ja) * 1978-03-16 1983-11-14 株式会社東芝 単結晶成長装置
JPS54157781A (en) * 1978-06-02 1979-12-12 Toshiba Ceramics Co Silicon single crystal manufacturing apparatus
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4446357A (en) * 1981-10-30 1984-05-01 Kennecott Corporation Resistance-heated boat for metal vaporization
DE3248103C1 (de) * 1982-12-24 1987-11-12 W.C. Heraeus Gmbh, 6450 Hanau Tiegel zum Ziehen von Einkristallen
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法

Also Published As

Publication number Publication date
EP0166500B1 (de) 1988-06-01
US4668481A (en) 1987-05-26
JPS60226492A (ja) 1985-11-11
EP0166500A1 (de) 1986-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee