DE3537689A1 - Integriertes elektronisches bauelement mit drei anschluessen - Google Patents

Integriertes elektronisches bauelement mit drei anschluessen

Info

Publication number
DE3537689A1
DE3537689A1 DE19853537689 DE3537689A DE3537689A1 DE 3537689 A1 DE3537689 A1 DE 3537689A1 DE 19853537689 DE19853537689 DE 19853537689 DE 3537689 A DE3537689 A DE 3537689A DE 3537689 A1 DE3537689 A1 DE 3537689A1
Authority
DE
Germany
Prior art keywords
zone
electronic component
emitter
gate
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19853537689
Other languages
German (de)
English (en)
Inventor
Franco Mailand/Milano Bertotti
Sandro Sesto S. Giovanni Storti
Flavio Mailand/Milano Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of DE3537689A1 publication Critical patent/DE3537689A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19853537689 1984-10-25 1985-10-23 Integriertes elektronisches bauelement mit drei anschluessen Withdrawn DE3537689A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423300A IT1213232B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata.

Publications (1)

Publication Number Publication Date
DE3537689A1 true DE3537689A1 (de) 1986-04-30

Family

ID=11205843

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853537689 Withdrawn DE3537689A1 (de) 1984-10-25 1985-10-23 Integriertes elektronisches bauelement mit drei anschluessen

Country Status (4)

Country Link
DE (1) DE3537689A1 (fr)
FR (1) FR2572585B1 (fr)
GB (1) GB2166292B (fr)
IT (1) IT1213232B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553691A (en) * 1978-06-13 1980-01-11 Ibm Integrated circuit having junction field effect transistor
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors

Also Published As

Publication number Publication date
IT1213232B (it) 1989-12-14
FR2572585A1 (fr) 1986-05-02
GB8525753D0 (en) 1985-11-20
IT8423300A0 (it) 1984-10-25
GB2166292B (en) 1988-06-08
GB2166292A (en) 1986-04-30
FR2572585B1 (fr) 1990-10-26

Similar Documents

Publication Publication Date Title
DE1639254A1 (de) Feldeffekthalbleitereinrichtung mit isoliertem Gatter und einem Durchschlagverhinderungsschaltelement sowie Verfahren zu ihrer Herstellung
DE69117897T2 (de) Programmierbare Schutzschaltung und deren monolitische Ausführung
DE3544324C2 (de) Integrierte MOS-Leistungsbrückenschaltung sowie Verfahren zu deren Herstellung
DE1764274C3 (de) Monolithisch integrierte Halbleiterstruktur zur Zuleitung von Versorgungsspannungen für nachträglich zu integrierende Halbleiterbauelemente und Verfahren zu ihrer Herstellung
DE69122598T2 (de) Integrierte Struktur eines bipolaren Leistungstransistors und eines Wiederspannungsbipolartransistors in Emittorschaltungs- oder Halbbrückenanordnung und dies bezügliche Herstellungsverfahren
DE69420565T2 (de) Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor
DE69525797T2 (de) Integrierte Halbleiterschaltung mit einer Stromspiegelschaltung
DE1564221A1 (de) Halbleiterbauelement vom Feldeffekttyp,insbesondere zur Realisierung von logischen Funktionen
EP0052860B1 (fr) Circuit en pont intégré monolithique à semi-conducteur
DE3881928T2 (de) Integrierte Schaltung zum Treiben induktiver Lasten.
DE69329543T2 (de) Herstellung eines Feldeffekttransistors mit integrierter Schottky-Klammerungsdiode
DE2657293C3 (de) Elektrische Schaltungsanordnung in Transistor-Transistor-Logikschaltung (TTL)
EP0174473B1 (fr) Etage de sortie de puissance intégré monolithiquement
DE1762435B2 (de) Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor
DE1764578A1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Feld-Effekt Transistor und durch dieses Verfahren hergestellte Halbleitervorrichtung
DE3230510A1 (de) Variabler mis-widerstand
DE3609629A1 (de) Integrierte elektronische schaltung zum ansteuern von induktiven lasten
DE3103785A1 (de) Halbleiteranordnung mit hoher durchbruchspannung
DE2507038C3 (de) Inverser Planartransistor und Verfahren zu seiner Herstellung
DE2835330C3 (de) Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung
DE69005649T2 (de) Spannungsgeneratorschaltung.
DE3537689A1 (de) Integriertes elektronisches bauelement mit drei anschluessen
DE2415736A1 (de) Metall-silizium-feldeffekttransistor
DE2263075A1 (de) Monolithische integrierte halbleiteranordnung
DE69324621T2 (de) Vorrichtung mit Substratisolation

Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: EISENFUEHR, G., DIPL.-ING. SPEISER, D., DIPL.-ING.

8141 Disposal/no request for examination