IT8423300A0 - Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata. - Google Patents

Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata.

Info

Publication number
IT8423300A0
IT8423300A0 IT8423300A IT2330084A IT8423300A0 IT 8423300 A0 IT8423300 A0 IT 8423300A0 IT 8423300 A IT8423300 A IT 8423300A IT 2330084 A IT2330084 A IT 2330084A IT 8423300 A0 IT8423300 A0 IT 8423300A0
Authority
IT
Italy
Prior art keywords
exceeding
terminals
electronic device
output current
applied voltage
Prior art date
Application number
IT8423300A
Other languages
English (en)
Other versions
IT1213232B (it
Inventor
Franco Bertotti
Sandro Storti
Flavio Villa
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8423300A priority Critical patent/IT1213232B/it
Publication of IT8423300A0 publication Critical patent/IT8423300A0/it
Priority to GB08525753A priority patent/GB2166292B/en
Priority to FR858515681A priority patent/FR2572585B1/fr
Priority to DE19853537689 priority patent/DE3537689A1/de
Application granted granted Critical
Publication of IT1213232B publication Critical patent/IT1213232B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8423300A 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata. IT1213232B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8423300A IT1213232B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata.
GB08525753A GB2166292B (en) 1984-10-25 1985-10-18 Three-terminal integrated electronic device
FR858515681A FR2572585B1 (fr) 1984-10-25 1985-10-22 Dispositif electronique integre a trois bornes, et procede pour sa fabrication
DE19853537689 DE3537689A1 (de) 1984-10-25 1985-10-23 Integriertes elektronisches bauelement mit drei anschluessen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423300A IT1213232B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata.

Publications (2)

Publication Number Publication Date
IT8423300A0 true IT8423300A0 (it) 1984-10-25
IT1213232B IT1213232B (it) 1989-12-14

Family

ID=11205843

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423300A IT1213232B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tre terminali con corrente di uscita annulantesi sostanzialmente al superamento di un determinato valore della tensione applicata.

Country Status (4)

Country Link
DE (1) DE3537689A1 (it)
FR (1) FR2572585B1 (it)
GB (1) GB2166292B (it)
IT (1) IT1213232B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
US5358883A (en) * 1992-02-03 1994-10-25 Motorola, Inc. Lateral bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553691A (en) * 1978-06-13 1980-01-11 Ibm Integrated circuit having junction field effect transistor
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors

Also Published As

Publication number Publication date
FR2572585B1 (fr) 1990-10-26
FR2572585A1 (fr) 1986-05-02
IT1213232B (it) 1989-12-14
DE3537689A1 (de) 1986-04-30
GB2166292B (en) 1988-06-08
GB2166292A (en) 1986-04-30
GB8525753D0 (en) 1985-11-20

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