DE3521549C2 - - Google Patents
Info
- Publication number
- DE3521549C2 DE3521549C2 DE19853521549 DE3521549A DE3521549C2 DE 3521549 C2 DE3521549 C2 DE 3521549C2 DE 19853521549 DE19853521549 DE 19853521549 DE 3521549 A DE3521549 A DE 3521549A DE 3521549 C2 DE3521549 C2 DE 3521549C2
- Authority
- DE
- Germany
- Prior art keywords
- particle
- source
- substrate
- measuring
- stream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002245 particle Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853521549 DE3521549A1 (de) | 1985-06-15 | 1985-06-15 | Verfahren zur messung und/oder regelung eines teilchenstromes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853521549 DE3521549A1 (de) | 1985-06-15 | 1985-06-15 | Verfahren zur messung und/oder regelung eines teilchenstromes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3521549A1 DE3521549A1 (de) | 1986-12-18 |
| DE3521549C2 true DE3521549C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-02-25 |
Family
ID=6273400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853521549 Granted DE3521549A1 (de) | 1985-06-15 | 1985-06-15 | Verfahren zur messung und/oder regelung eines teilchenstromes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3521549A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH490678A (fr) * | 1967-04-21 | 1970-05-15 | Battelle Development Corp | Jauge de mesure de la vitesse d'évaporation sous vide |
-
1985
- 1985-06-15 DE DE19853521549 patent/DE3521549A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3521549A1 (de) | 1986-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69801106T2 (de) | Verfahren und vorrichtung zur niederdruckzerstäubung | |
| EP0282835B1 (de) | Verfahren und Vorrichtung zur Regelung der reaktiven Schichtabscheidung auf Substraten mittels Magnetronkatoden | |
| DE19752322B4 (de) | Verfahren und Vorrichtung für die hochautomatisierte Herstellung von Dünnfilmen | |
| DE19506515C1 (de) | Verfahren zur reaktiven Beschichtung | |
| DE3920835C2 (de) | Einrichtung zum Beschichten von Substraten | |
| DE2700979C3 (de) | Verfahren und Vorrichtung zur Kontrolle von Aufdampfprozessen | |
| DE3929695C2 (de) | Vorrichtung zum Beschichten eines Substrats | |
| DE8710321U1 (de) | Zerstäubungsquelle für Kathodenzerstäubungsanlagen | |
| EP0501016A1 (de) | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung für die Durchführung des Verfahrens | |
| DE69030329T2 (de) | Ionimplantationsgerät | |
| EP0411359A2 (de) | Anordnung zur Dickenmessung von Dünnschichten | |
| EP0273251A1 (de) | Verfahren zur Steuerung und Kontrolle von durch im Plasma aktivierte Ionen, Radikale und/oder neutrale Teilchen bewirkten Ätzprozessen, insbesondere für höchstintegrierte Halbleiterschaltungen | |
| DE10018015A1 (de) | Anordnung zur Durchführung eines plasmabasierten Verfahrens | |
| EP0772223A2 (de) | Vorrichtung zum Beschichten eines Substrats von einem elektrisch leitfähigen Target | |
| DE1515300A1 (de) | Vorrichtung zur Herstellung hochwertiger duenner Schichten durch Kathodenzerstaeubung | |
| DE1690276B1 (de) | Kathodenzerstaeubungsvrfahren zur herstellung ohmscher kontakte auf einem halbleitersubstrat und vorrichtung zur durchfuehrung des verfahrens | |
| DE60035054T2 (de) | Ionenstrahl-Vakuumzerstäubungsapparatur und Verfahren | |
| DE3880275T2 (de) | Anlage und Verfahren zur Ablagerung einer dünnen Schicht auf ein durchsichtiges Substrat, insbesondere zur Herstellung von Glasscheiben. | |
| EP3401944B1 (de) | Verfahren und vorrichtung zum erfassen von elektrisch geladenen teilchen eines teilchenstroms sowie system zur analyse von ionisierten komponenten eines analyten | |
| DE3521549C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE19928053C2 (de) | Anordnung zur Erzeugung eines Niedertemperaturplasmas durch eine magnetfeldgestützte Kathodenentladung | |
| DE3242855A1 (de) | Verfahren und vorrichtung zur konturierung der dicke von aufgespruehten schichten | |
| EP0563609B1 (de) | Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung | |
| DE3426145A1 (de) | Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen | |
| DE19548447A1 (de) | Verfahren und Vorrichtung zum Auftragen eines Photoresistfilms |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8320 | Willingness to grant licenses declared (paragraph 23) | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: DAIMLERCHRYSLER AG, 70567 STUTTGART, DE |
|
| 8339 | Ceased/non-payment of the annual fee |