DE3484271D1 - Zusammensetzung fuer einen lithographischen schutzlack. - Google Patents

Zusammensetzung fuer einen lithographischen schutzlack.

Info

Publication number
DE3484271D1
DE3484271D1 DE8484308616T DE3484271T DE3484271D1 DE 3484271 D1 DE3484271 D1 DE 3484271D1 DE 8484308616 T DE8484308616 T DE 8484308616T DE 3484271 T DE3484271 T DE 3484271T DE 3484271 D1 DE3484271 D1 DE 3484271D1
Authority
DE
Germany
Prior art keywords
composition
protective lacquer
lithographic
lithographic protective
lacquer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484308616T
Other languages
German (de)
English (en)
Inventor
Edward Darko Babich
Michael Hatzakis
Jurij Rostyslav Paraszcak
Jane Margaret Shaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3484271D1 publication Critical patent/DE3484271D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
DE8484308616T 1983-12-30 1984-12-11 Zusammensetzung fuer einen lithographischen schutzlack. Expired - Lifetime DE3484271D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/567,305 US4603195A (en) 1983-12-30 1983-12-30 Organosilicon compound and use thereof in photolithography

Publications (1)

Publication Number Publication Date
DE3484271D1 true DE3484271D1 (de) 1991-04-18

Family

ID=24266628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484308616T Expired - Lifetime DE3484271D1 (de) 1983-12-30 1984-12-11 Zusammensetzung fuer einen lithographischen schutzlack.

Country Status (4)

Country Link
US (1) US4603195A (enExample)
EP (1) EP0147127B1 (enExample)
JP (1) JPS60147732A (enExample)
DE (1) DE3484271D1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264319A (en) * 1985-05-10 1993-11-23 Hitachi, Ltd. Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor
EP0204963B1 (en) * 1985-05-10 1993-01-13 Hitachi, Ltd. Use of Alkali-Soluble Polyorganosilsesquioxane Polymers in a resist for preparing electronics parts.
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
JPH069222B2 (ja) * 1986-01-07 1994-02-02 日立化成工業株式会社 多層配線構造の製造法
JP2619358B2 (ja) * 1986-01-08 1997-06-11 株式会社日立製作所 感光性樹脂組成物
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
JPH0772799B2 (ja) * 1986-08-13 1995-08-02 ソニー株式会社 レジスト材料
JPS63239440A (ja) * 1986-11-25 1988-10-05 Nippon Telegr & Teleph Corp <Ntt> エネルギ線感応性樹脂組成物
DE3810247A1 (de) * 1987-03-26 1988-10-06 Toshiba Kawasaki Kk Lichtempfindliche beschichtungsmasse
EP0283546B1 (de) * 1987-03-27 1993-07-14 Ibm Deutschland Gmbh Verfahren zum Herstellen beliebig geformter mikromechanischer Bauteile aus planparallelen Platten aus Polymermaterial oder beliebig geformter Duchführungsöffnungen in denselben
JPS63269150A (ja) * 1987-04-28 1988-11-07 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成方法
US4933414A (en) * 1987-07-31 1990-06-12 General Electric Company Radiation active silicon compounds having amide limited mercaptan functional groups
US5043418A (en) * 1988-10-04 1991-08-27 General Electric Company Method for stabilizing polyamide acid solutions of pyromellitic dianhydride and coating compositions
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
EP0365881A3 (en) * 1988-10-28 1990-07-11 International Business Machines Corporation Composition capable of being imaged and use of such a composition
DE69029104T2 (de) * 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxane und positiv arbeitende Resistmasse
JP2648969B2 (ja) * 1989-07-28 1997-09-03 富士写真フイルム株式会社 感光性組成物
US5116703A (en) * 1989-12-15 1992-05-26 Xerox Corporation Functional hybrid compounds and thin films by sol-gel process
JP3220992B2 (ja) * 1991-01-22 2001-10-22 ソニー株式会社 ドライエッチング方法
JP3074406B2 (ja) * 1991-09-12 2000-08-07 鐘淵化学工業株式会社 硬化性組成物
EP0568476B1 (en) * 1992-04-30 1995-10-11 International Business Machines Corporation Silicon-containing positive resist and method of using the same in thin film packaging technology
EP0587231B1 (en) * 1992-09-09 1998-07-08 Koninklijke Philips Electronics N.V. Method of chemically modifying a surface in accordance with a pattern
US5378502A (en) * 1992-09-09 1995-01-03 U.S. Philips Corporation Method of chemically modifying a surface in accordance with a pattern
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
US6251569B1 (en) 1999-08-13 2001-06-26 International Business Machines Corporation Forming a pattern of a negative photoresist
JP4797701B2 (ja) * 2006-03-02 2011-10-19 日立化成工業株式会社 感放射線性組成物
JP2007293160A (ja) * 2006-04-27 2007-11-08 Asahi Kasei Corp 感光性かご状シルセスキオキサン化合物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
US4283249A (en) * 1979-05-02 1981-08-11 International Business Machines Corporation Reactive ion etching
FR2478641A1 (fr) * 1980-03-24 1981-09-25 Rhone Poulenc Ind Nouveaux photosensibilisateurs, leur procede d'obtention et leur utilisation dans des compositions photoresists
JPS5848045A (ja) * 1981-09-18 1983-03-19 Shin Etsu Chem Co Ltd 感光性組成物

Also Published As

Publication number Publication date
US4603195A (en) 1986-07-29
EP0147127B1 (en) 1991-03-13
EP0147127A2 (en) 1985-07-03
JPH0369101B2 (enExample) 1991-10-30
EP0147127A3 (en) 1986-09-03
JPS60147732A (ja) 1985-08-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee