DE3483217D1 - Maske fuer elektronenlithographie. - Google Patents
Maske fuer elektronenlithographie.Info
- Publication number
- DE3483217D1 DE3483217D1 DE8484200738T DE3483217T DE3483217D1 DE 3483217 D1 DE3483217 D1 DE 3483217D1 DE 8484200738 T DE8484200738 T DE 8484200738T DE 3483217 T DE3483217 T DE 3483217T DE 3483217 D1 DE3483217 D1 DE 3483217D1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- electron lithography
- lithography
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06333—Photo emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31779—Lithography by projection from patterned photocathode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08314435A GB2142158A (en) | 1983-05-25 | 1983-05-25 | Electron lithography masks |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483217D1 true DE3483217D1 (de) | 1990-10-25 |
Family
ID=10543308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484200738T Expired - Lifetime DE3483217D1 (de) | 1983-05-25 | 1984-05-22 | Maske fuer elektronenlithographie. |
Country Status (6)
Country | Link |
---|---|
US (2) | US4608332A (de) |
EP (1) | EP0127919B1 (de) |
JP (1) | JPH065664B2 (de) |
CA (1) | CA1215481A (de) |
DE (1) | DE3483217D1 (de) |
GB (1) | GB2142158A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2155201B (en) * | 1984-02-24 | 1988-07-13 | Canon Kk | An x-ray exposure apparatus |
DE3584141D1 (de) * | 1984-11-20 | 1991-10-24 | Fujitsu Ltd | Verfahren zum projizieren eines photoelektrischen bildes. |
JPS61216323A (ja) * | 1985-02-13 | 1986-09-26 | Fujitsu Ltd | 電子像転写方法 |
JPH0648380B2 (ja) * | 1985-06-13 | 1994-06-22 | 株式会社東芝 | マスク検査方法 |
US5064681A (en) * | 1986-08-21 | 1991-11-12 | International Business Machines Corporation | Selective deposition process for physical vapor deposition |
US4928018A (en) * | 1989-06-29 | 1990-05-22 | Texas Instruments, Incorporated | Thermo-enhanced electron image projector |
US4968894A (en) * | 1989-06-29 | 1990-11-06 | Texas Instruments Incorporated | Electrical field enhanced electron image projector |
US5141830A (en) * | 1989-09-20 | 1992-08-25 | Jeol Ltd. | Charged-particle beam lithography method |
US5320934A (en) * | 1991-06-28 | 1994-06-14 | Misium George R | Bilayer photolithographic process |
US6476401B1 (en) | 1999-09-16 | 2002-11-05 | Applied Materials, Inc. | Moving photocathode with continuous regeneration for image conversion in electron beam lithography |
US7446474B2 (en) * | 2002-10-10 | 2008-11-04 | Applied Materials, Inc. | Hetero-junction electron emitter with Group III nitride and activated alkali halide |
US7015467B2 (en) * | 2002-10-10 | 2006-03-21 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB650457A (en) * | 1946-03-26 | 1951-02-28 | Kodak Ltd | Improvements in recording images by means of phosphors |
US3686028A (en) * | 1970-09-24 | 1972-08-22 | Westinghouse Electric Corp | Masked photocathode |
DE2256966A1 (de) * | 1972-11-21 | 1974-05-22 | Basf Ag | Anordnung zum belichten von lichtempfindlichen materialien mit auf einem kathodenstrahlroehren-bildschirm dargestellten bildinformationen |
US3983401A (en) * | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
US4088896A (en) * | 1976-12-20 | 1978-05-09 | Rockwell International Corporation | Actinic radiation emissive pattern defining masks for fine line lithography and lithography utilizing such masks |
JPS5480083A (en) * | 1977-12-02 | 1979-06-26 | Iisuto Imuperiaru Intern Corp | High resolution mask |
JPS5596942A (en) * | 1979-01-19 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method and apparatus for producing minute pattern |
EP0032521B1 (de) * | 1979-07-11 | 1984-05-30 | Fuji Photo Film Co., Ltd. | Verstärkungseinstellung für ein Bestrahlungsbild-Wiedergabesystem |
JPS5799639A (en) * | 1980-12-12 | 1982-06-21 | Fujitsu Ltd | Treatment of negative type resist |
JPS57194531A (en) * | 1981-05-26 | 1982-11-30 | Toshiba Corp | Electron beam transfer device |
-
1983
- 1983-05-25 GB GB08314435A patent/GB2142158A/en not_active Withdrawn
-
1984
- 1984-05-01 US US06/606,089 patent/US4608332A/en not_active Expired - Fee Related
- 1984-05-22 DE DE8484200738T patent/DE3483217D1/de not_active Expired - Lifetime
- 1984-05-22 EP EP84200738A patent/EP0127919B1/de not_active Expired
- 1984-05-24 CA CA000455071A patent/CA1215481A/en not_active Expired
- 1984-05-25 JP JP10632384A patent/JPH065664B2/ja not_active Expired - Lifetime
-
1986
- 1986-03-13 US US06/839,248 patent/US4652762A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB8314435D0 (en) | 1983-06-29 |
JPS59227122A (ja) | 1984-12-20 |
US4652762A (en) | 1987-03-24 |
GB2142158A (en) | 1985-01-09 |
CA1215481A (en) | 1986-12-16 |
EP0127919B1 (de) | 1990-09-19 |
JPH065664B2 (ja) | 1994-01-19 |
EP0127919A3 (en) | 1987-06-16 |
US4608332A (en) | 1986-08-26 |
EP0127919A2 (de) | 1984-12-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |