DE3483217D1 - Maske fuer elektronenlithographie. - Google Patents

Maske fuer elektronenlithographie.

Info

Publication number
DE3483217D1
DE3483217D1 DE8484200738T DE3483217T DE3483217D1 DE 3483217 D1 DE3483217 D1 DE 3483217D1 DE 8484200738 T DE8484200738 T DE 8484200738T DE 3483217 T DE3483217 T DE 3483217T DE 3483217 D1 DE3483217 D1 DE 3483217D1
Authority
DE
Germany
Prior art keywords
mask
electron lithography
lithography
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484200738T
Other languages
English (en)
Inventor
Rodney Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3483217D1 publication Critical patent/DE3483217D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2037Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06325Cold-cathode sources
    • H01J2237/06333Photo emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31777Lithography by projection
    • H01J2237/31779Lithography by projection from patterned photocathode
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE8484200738T 1983-05-25 1984-05-22 Maske fuer elektronenlithographie. Expired - Lifetime DE3483217D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08314435A GB2142158A (en) 1983-05-25 1983-05-25 Electron lithography masks

Publications (1)

Publication Number Publication Date
DE3483217D1 true DE3483217D1 (de) 1990-10-25

Family

ID=10543308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484200738T Expired - Lifetime DE3483217D1 (de) 1983-05-25 1984-05-22 Maske fuer elektronenlithographie.

Country Status (6)

Country Link
US (2) US4608332A (de)
EP (1) EP0127919B1 (de)
JP (1) JPH065664B2 (de)
CA (1) CA1215481A (de)
DE (1) DE3483217D1 (de)
GB (1) GB2142158A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155201B (en) * 1984-02-24 1988-07-13 Canon Kk An x-ray exposure apparatus
DE3584141D1 (de) * 1984-11-20 1991-10-24 Fujitsu Ltd Verfahren zum projizieren eines photoelektrischen bildes.
JPS61216323A (ja) * 1985-02-13 1986-09-26 Fujitsu Ltd 電子像転写方法
JPH0648380B2 (ja) * 1985-06-13 1994-06-22 株式会社東芝 マスク検査方法
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
US4928018A (en) * 1989-06-29 1990-05-22 Texas Instruments, Incorporated Thermo-enhanced electron image projector
US4968894A (en) * 1989-06-29 1990-11-06 Texas Instruments Incorporated Electrical field enhanced electron image projector
US5141830A (en) * 1989-09-20 1992-08-25 Jeol Ltd. Charged-particle beam lithography method
US5320934A (en) * 1991-06-28 1994-06-14 Misium George R Bilayer photolithographic process
US6476401B1 (en) 1999-09-16 2002-11-05 Applied Materials, Inc. Moving photocathode with continuous regeneration for image conversion in electron beam lithography
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB650457A (en) * 1946-03-26 1951-02-28 Kodak Ltd Improvements in recording images by means of phosphors
US3686028A (en) * 1970-09-24 1972-08-22 Westinghouse Electric Corp Masked photocathode
DE2256966A1 (de) * 1972-11-21 1974-05-22 Basf Ag Anordnung zum belichten von lichtempfindlichen materialien mit auf einem kathodenstrahlroehren-bildschirm dargestellten bildinformationen
US3983401A (en) * 1975-03-13 1976-09-28 Electron Beam Microfabrication Corporation Method and apparatus for target support in electron projection systems
US4088896A (en) * 1976-12-20 1978-05-09 Rockwell International Corporation Actinic radiation emissive pattern defining masks for fine line lithography and lithography utilizing such masks
JPS5480083A (en) * 1977-12-02 1979-06-26 Iisuto Imuperiaru Intern Corp High resolution mask
JPS5596942A (en) * 1979-01-19 1980-07-23 Matsushita Electric Ind Co Ltd Method and apparatus for producing minute pattern
EP0032521B1 (de) * 1979-07-11 1984-05-30 Fuji Photo Film Co., Ltd. Verstärkungseinstellung für ein Bestrahlungsbild-Wiedergabesystem
JPS5799639A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Treatment of negative type resist
JPS57194531A (en) * 1981-05-26 1982-11-30 Toshiba Corp Electron beam transfer device

Also Published As

Publication number Publication date
GB8314435D0 (en) 1983-06-29
JPS59227122A (ja) 1984-12-20
US4652762A (en) 1987-03-24
GB2142158A (en) 1985-01-09
CA1215481A (en) 1986-12-16
EP0127919B1 (de) 1990-09-19
JPH065664B2 (ja) 1994-01-19
EP0127919A3 (en) 1987-06-16
US4608332A (en) 1986-08-26
EP0127919A2 (de) 1984-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee