DE3476494D1 - Resistive gate field effect transistor logic family - Google Patents

Resistive gate field effect transistor logic family

Info

Publication number
DE3476494D1
DE3476494D1 DE8484110056T DE3476494T DE3476494D1 DE 3476494 D1 DE3476494 D1 DE 3476494D1 DE 8484110056 T DE8484110056 T DE 8484110056T DE 3476494 T DE3476494 T DE 3476494T DE 3476494 D1 DE3476494 D1 DE 3476494D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor logic
gate field
logic family
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484110056T
Other languages
English (en)
Inventor
Claude Louis Bertin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3476494D1 publication Critical patent/DE3476494D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8484110056T 1983-09-08 1984-08-23 Resistive gate field effect transistor logic family Expired DE3476494D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/530,450 US4602170A (en) 1983-09-08 1983-09-08 Resistive gate field effect transistor logic family

Publications (1)

Publication Number Publication Date
DE3476494D1 true DE3476494D1 (en) 1989-03-02

Family

ID=24113677

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484110056T Expired DE3476494D1 (en) 1983-09-08 1984-08-23 Resistive gate field effect transistor logic family

Country Status (4)

Country Link
US (1) US4602170A (de)
EP (1) EP0137257B1 (de)
JP (1) JPS6062153A (de)
DE (1) DE3476494D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3578533D1 (de) * 1984-04-28 1990-08-09 Sony Corp Halbleiterbauelement mit von source- und/oder drain-gebieten umgebenen anschlussflaechen.
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
US4918332A (en) * 1988-06-15 1990-04-17 Advanced Micro Devices, Inc. TTL output driver gate configuration
US4959565A (en) * 1989-02-10 1990-09-25 National Semiconductor Corporation Output buffer with ground bounce control
FI953433A (fi) * 1995-07-14 1997-01-15 Nokia Mobile Phones Ltd Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin
US5982198A (en) * 1997-03-19 1999-11-09 Honeywell Inc. Free inverter circuit
FI103617B1 (fi) * 1997-09-01 1999-07-30 Nokia Mobile Phones Ltd Kanavatransistorit
CN115113846B (zh) * 2022-08-31 2022-12-06 之江实验室 一种全加器电路和多位全加器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK134919B (da) * 1966-01-04 1977-02-07 Soeren Anton Wilfre Joergensen Matrix-kobling.
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
JPS552741B2 (de) * 1973-04-06 1980-01-22
US3946418A (en) * 1972-11-01 1976-03-23 General Electric Company Resistive gate field effect transistor
US4157557A (en) * 1973-07-23 1979-06-05 Sony Corporation Control circuit for signal transmission
JPS5615149B2 (de) * 1973-08-10 1981-04-08
JPS5040282A (de) * 1973-08-16 1975-04-12
JPS5339225B2 (de) * 1973-11-13 1978-10-20
US3986043A (en) * 1974-12-20 1976-10-12 International Business Machines Corporation CMOS digital circuits with active shunt feedback amplifier
JPS51126772A (en) * 1975-04-25 1976-11-05 Nippon Denso Co Ltd Electrolytic effect type semiconductor unit
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
JPS52119190A (en) * 1976-03-31 1977-10-06 Toshiba Corp Semiconductor integration circuit
US4158239A (en) * 1977-12-20 1979-06-12 International Business Machines Corporation Resistive gate FET flip-flop storage cell
JPS5839064A (ja) * 1981-09-02 1983-03-07 Nec Corp 絶縁ゲ−ト型電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6062153A (ja) 1985-04-10
US4602170A (en) 1986-07-22
EP0137257A3 (en) 1986-02-19
JPH056351B2 (de) 1993-01-26
EP0137257B1 (de) 1989-01-25
EP0137257A2 (de) 1985-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee