DE3475992D1 - Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions - Google Patents

Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions

Info

Publication number
DE3475992D1
DE3475992D1 DE8484903905T DE3475992T DE3475992D1 DE 3475992 D1 DE3475992 D1 DE 3475992D1 DE 8484903905 T DE8484903905 T DE 8484903905T DE 3475992 T DE3475992 T DE 3475992T DE 3475992 D1 DE3475992 D1 DE 3475992D1
Authority
DE
Germany
Prior art keywords
fabrication
semiconductor devices
compound semiconductor
group iii
low resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484903905T
Other languages
English (en)
Inventor
Philip Anthony
Robert Hartman
Louis Koszi
Bertram Schwartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3475992D1 publication Critical patent/DE3475992D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8484903905T 1983-11-28 1984-10-18 Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions Expired DE3475992D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/555,506 US4539743A (en) 1983-11-28 1983-11-28 Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
PCT/US1984/001675 WO1985002495A1 (en) 1983-11-28 1984-10-18 Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions

Publications (1)

Publication Number Publication Date
DE3475992D1 true DE3475992D1 (en) 1989-02-09

Family

ID=24217514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484903905T Expired DE3475992D1 (en) 1983-11-28 1984-10-18 Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions

Country Status (7)

Country Link
US (1) US4539743A (de)
EP (1) EP0162061B1 (de)
JP (1) JPS61500521A (de)
KR (1) KR850700184A (de)
CA (1) CA1217877A (de)
DE (1) DE3475992D1 (de)
WO (1) WO1985002495A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
FR2582455B1 (fr) * 1985-05-21 1987-08-14 Menigaux Louis Procede de fabrication d'un laser a semiconducteur a geometrie a ruban et laser obtenu par ce procede
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
GB8913070D0 (en) * 1989-06-07 1989-07-26 Bt & D Technologies Ltd Semiconductor device
US5552335A (en) * 1991-03-29 1996-09-03 Electronic Decisions, Inc. Acoustic charge transport integrated circuit process
US5358877A (en) * 1991-03-29 1994-10-25 Electronic Decisions Inc. Soft proton isolation process for an acoustic charge transport integrated circuit
US5482872A (en) * 1994-01-31 1996-01-09 Motorola, Inc. Method of forming isolation region in a compound semiconductor substrate
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
US6100168A (en) * 1998-11-16 2000-08-08 Industrial Technology Research Institute Location selective transmutation doping on silicon wafers using high energy deuterons
EP1139409A3 (de) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selektives Laser-Anneal eines Halbleitermaterials
JP3864870B2 (ja) * 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
JP6383516B2 (ja) 2013-04-19 2018-08-29 ライトスピン テクノロジーズ、インク． 集積アバランシェ・フォトダイオード・アレイ
WO2016178678A1 (en) 2015-05-06 2016-11-10 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
DE102016112139B3 (de) * 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791929A (fr) * 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur
JPS5319778A (en) * 1976-08-06 1978-02-23 Nec Corp Singlemode semiconductor laser and its production
US4290825A (en) * 1978-02-13 1981-09-22 United Kingdom Atomic Energy Authority Semiconductor devices containing protons and deuterons implanted regions
DE2832012A1 (de) * 1978-07-20 1980-01-31 Siemens Ag Verfahren zum herstellen einer dreidimensionalen integrierten schaltung
GB2050802B (en) * 1979-06-12 1983-03-02 Imp Group Ltd Feeding tobacco webs
US4358323A (en) * 1980-04-23 1982-11-09 Rca Corporation Low cost reduced blooming device and method for making the same
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4403397A (en) * 1981-07-13 1983-09-13 The United States Of America As Represented By The Secretary Of The Navy Method of making avalanche photodiodes
US4391952A (en) * 1981-12-04 1983-07-05 Bengal, Inc. Anti-static material and method of making the material

Also Published As

Publication number Publication date
JPS61500521A (ja) 1986-03-20
WO1985002495A1 (en) 1985-06-06
US4539743A (en) 1985-09-10
EP0162061B1 (de) 1989-01-04
KR850700184A (ko) 1985-10-25
CA1217877A (en) 1987-02-10
EP0162061A1 (de) 1985-11-27

Similar Documents

Publication Publication Date Title
DE3475992D1 (en) Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions
EP0092871A3 (en) Semiconductor integrated circuits and method of manufacturing
GB2127217B (en) Semiconductor chip carriers and housings
EP0146895A3 (en) Method of manufacturing semiconductor device
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
JPS5661168A (en) Silicon on sapphire semiconductor structure and method of manufacturing same
GB8313477D0 (en) Manufacturing semiconductor devices
GB8312850D0 (en) Semiconductor wafer fabrication
GB8410251D0 (en) Handling semiconductor wafers
EP0130591A3 (en) Semiconductor device of resin-seal type
HK69587A (en) Semiconductor integrated circuit devices and method of manufacturing the same
EP0149683A4 (de) Verfahren zur herstellung von halbleitervorrichtungen.
GB8408563D0 (en) Iii-v group compound semiconductor crystal
IL73844A0 (en) Manufacture of semiconductor devices
DE3471824D1 (en) Method of manufacturing mos type semiconductor devices
GB8530304D0 (en) Semiconductors wafers &amp;c
EP0193934A3 (en) Semiconductor integreated circuit device and method of manufacturing the same
EP0167391A3 (en) Method of manufacturing semiconductor devices
DE3380104D1 (en) Substrate structure of semiconductor device and method of manufacturing the same
DE3462565D1 (en) Method of forming large number of monocrystalline semiconductor regions on surface of insulator
DE3469110D1 (en) Fabrication of inp containing semiconductor devices having high and low resistivity regions
EP0120830A3 (en) Semiconductor substrate materials having enhanced gettering ability
DE3368348D1 (en) Semiconductor device and method of manufacturing same
GB2186426B (en) Semiconductor device and method of fabrication thereof
DE3475991D1 (en) Method of fabricating algaas semiconductor devices having high and low resistivity regions

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee