DE3430379A1 - Verbessertes verfahren zur aufbringung eines halbleitermaterials auf ein substrat - Google Patents
Verbessertes verfahren zur aufbringung eines halbleitermaterials auf ein substratInfo
- Publication number
- DE3430379A1 DE3430379A1 DE3430379A DE3430379A DE3430379A1 DE 3430379 A1 DE3430379 A1 DE 3430379A1 DE 3430379 A DE3430379 A DE 3430379A DE 3430379 A DE3430379 A DE 3430379A DE 3430379 A1 DE3430379 A1 DE 3430379A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- stress
- layer
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 71
- 239000000758 substrate Substances 0.000 title claims description 37
- 239000000463 material Substances 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 17
- 239000010935 stainless steel Substances 0.000 claims description 16
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005496 tempering Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- 241001290307 Thalassoma bifasciatum Species 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 238000000227 grinding Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 5
- 239000002775 capsule Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 102000000588 Interleukin-2 Human genes 0.000 description 1
- 108010002350 Interleukin-2 Proteins 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838322273A GB8322273D0 (en) | 1983-08-18 | 1983-08-18 | Applying semiconductor material to substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3430379A1 true DE3430379A1 (de) | 1985-03-07 |
Family
ID=10547502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3430379A Withdrawn DE3430379A1 (de) | 1983-08-18 | 1984-08-17 | Verbessertes verfahren zur aufbringung eines halbleitermaterials auf ein substrat |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE3430379A1 (fr) |
| FR (1) | FR2550885A1 (fr) |
| GB (2) | GB8322273D0 (fr) |
| IT (1) | IT1175603B (fr) |
| NL (1) | NL8402533A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19645083C2 (de) * | 1996-11-01 | 2000-01-27 | Austria Card Gmbh Wien | Kontaktlose Chipkarte mit Transponderspule |
| US8044472B2 (en) | 2003-03-25 | 2011-10-25 | Kulite Semiconductor Products, Inc. | Nanotube and graphene semiconductor structures with varying electrical properties |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1465112A1 (de) * | 1963-10-04 | 1969-01-23 | Anritsu Electric Company Ltd | Im Vakuum niedergeschlagene Halbleiterschichten fuer Elasto-Widerstandselemente |
| GB1244551A (en) * | 1969-02-28 | 1971-09-02 | British Aircraft Corp Ltd | Improvements relating to acoustic detector arrays |
| US3673354A (en) * | 1969-05-08 | 1972-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor stress transducer |
| JPS5438491B1 (fr) * | 1969-09-22 | 1979-11-21 | ||
| US3805601A (en) * | 1972-07-28 | 1974-04-23 | Bell & Howell Co | High sensitivity semiconductor strain gauge |
-
1983
- 1983-08-18 GB GB838322273A patent/GB8322273D0/en active Pending
-
1984
- 1984-08-17 NL NL8402533A patent/NL8402533A/nl not_active Application Discontinuation
- 1984-08-17 DE DE3430379A patent/DE3430379A1/de not_active Withdrawn
- 1984-08-17 GB GB08420903A patent/GB2145284B/en not_active Expired
- 1984-08-17 FR FR8412936A patent/FR2550885A1/fr active Pending
- 1984-08-17 IT IT22345/84A patent/IT1175603B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT8422345A0 (it) | 1984-08-17 |
| GB2145284A (en) | 1985-03-20 |
| IT1175603B (it) | 1987-07-15 |
| FR2550885A1 (fr) | 1985-02-22 |
| GB2145284B (en) | 1987-05-28 |
| NL8402533A (nl) | 1985-03-18 |
| GB8322273D0 (en) | 1983-09-21 |
| GB8420903D0 (en) | 1984-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |