DE3410580A1 - Abschaltthyristormodul - Google Patents

Abschaltthyristormodul

Info

Publication number
DE3410580A1
DE3410580A1 DE19843410580 DE3410580A DE3410580A1 DE 3410580 A1 DE3410580 A1 DE 3410580A1 DE 19843410580 DE19843410580 DE 19843410580 DE 3410580 A DE3410580 A DE 3410580A DE 3410580 A1 DE3410580 A1 DE 3410580A1
Authority
DE
Germany
Prior art keywords
cathode
thyristor
housing
connection
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843410580
Other languages
German (de)
English (en)
Other versions
DE3410580C2 (https=
Inventor
Kozo Itami Hyogo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3410580A1 publication Critical patent/DE3410580A1/de
Application granted granted Critical
Publication of DE3410580C2 publication Critical patent/DE3410580C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
DE19843410580 1983-03-22 1984-03-22 Abschaltthyristormodul Granted DE3410580A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58048151A JPS59172759A (ja) 1983-03-22 1983-03-22 ゲ−トタ−ンオフサイリスタモジユ−ル

Publications (2)

Publication Number Publication Date
DE3410580A1 true DE3410580A1 (de) 1984-11-15
DE3410580C2 DE3410580C2 (https=) 1987-05-27

Family

ID=12795357

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843410580 Granted DE3410580A1 (de) 1983-03-22 1984-03-22 Abschaltthyristormodul

Country Status (3)

Country Link
US (1) US4634891A (https=)
JP (1) JPS59172759A (https=)
DE (1) DE3410580A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036426A1 (de) * 1989-11-16 1991-05-29 Int Rectifier Corp Sperrschicht-bipolartransistor-leistungsmodul
EP1098369A3 (en) * 1999-11-04 2003-09-10 Hitachi, Ltd. Semiconductor module and inverter device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853762A (en) * 1986-03-27 1989-08-01 International Rectifier Corporation Semi-conductor modules
JPH01192156A (ja) * 1988-01-27 1989-08-02 Sansha Electric Mfg Co Ltd 半導体装置
US5210451A (en) * 1990-06-25 1993-05-11 Asea Brown Boveri Ltd. Power semiconductor circuit
JPH04131546U (ja) * 1991-05-28 1992-12-03 佳祐 上野 自動車用傘立て
JP2979930B2 (ja) * 1993-10-28 1999-11-22 富士電機株式会社 電力用半導体装置のパッケージ
US5796599A (en) * 1997-03-12 1998-08-18 Reliance Electric Industrial Company Self-powered gate driver board
EP1538228A1 (fr) * 2003-12-01 2005-06-08 R & D du groupe Cockerill-Sambre Procédé et Dispositif de refroidissement d'une bande d'acier
FR2915633B1 (fr) * 2007-04-24 2010-05-14 Renault Sas Dispositif d'interrupteur electronique pour commander l'alimentation d'une charge de forte puissance dans un vehicule automobile.
US9768607B2 (en) * 2015-05-11 2017-09-19 Infineon Technologies Ag System and method for a multi-phase snubber circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2800304A1 (de) * 1977-01-07 1978-07-13 Varian Associates Halbleiter-baugruppe
US4335392A (en) * 1978-03-23 1982-06-15 Brown, Boveri & Cie Aktiengesellschaft Semiconductor device with at least two semiconductor elements
DE3211975A1 (de) * 1981-04-03 1982-10-21 Le Silicium Semiconducteur SSC, 75008 Paris Montagegehaeuse fuer halbleiterbauteile mittlerer leistung
DE3127456A1 (de) * 1981-07-11 1983-02-03 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichteranordnung
DE3245762A1 (de) * 1982-03-13 1983-09-22 Brown, Boveri & Cie Ag, 6800 Mannheim Halbleiterbauelement in modulbauweise

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2800340C2 (de) * 1978-01-04 1984-10-31 MTA Központi Fizikai Kutato Intezete, Budapest Einstellvorrichtung, insbesondere für optische Messungen
WO1982002980A1 (en) * 1981-02-27 1982-09-02 Inc Motorola High current package with multi-level leads
US4518982A (en) * 1981-02-27 1985-05-21 Motorola, Inc. High current package with multi-level leads

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2800304A1 (de) * 1977-01-07 1978-07-13 Varian Associates Halbleiter-baugruppe
US4335392A (en) * 1978-03-23 1982-06-15 Brown, Boveri & Cie Aktiengesellschaft Semiconductor device with at least two semiconductor elements
DE3211975A1 (de) * 1981-04-03 1982-10-21 Le Silicium Semiconducteur SSC, 75008 Paris Montagegehaeuse fuer halbleiterbauteile mittlerer leistung
DE3127456A1 (de) * 1981-07-11 1983-02-03 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichteranordnung
DE3245762A1 (de) * 1982-03-13 1983-09-22 Brown, Boveri & Cie Ag, 6800 Mannheim Halbleiterbauelement in modulbauweise

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
DD-Z: Elektrie 35, 1981, H. 3, S. 119-122 *
DE-Z: Der Elektroniker, 7-1983, S.32-34 *
DE-Z: Elektronik 18/09.09.1983, S.115-118 *
DE-Z: Elektronik-Applikationn, 15. Jg., 1983, Nr. 3, S. 47 - 50 *
JP-Abstract 52-106276 *
US-Z: IEEE spectrum, De. 1982, S. 40 - 45 *
WO 79/00817 *
WO 82/02980 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036426A1 (de) * 1989-11-16 1991-05-29 Int Rectifier Corp Sperrschicht-bipolartransistor-leistungsmodul
EP1098369A3 (en) * 1999-11-04 2003-09-10 Hitachi, Ltd. Semiconductor module and inverter device

Also Published As

Publication number Publication date
US4634891A (en) 1987-01-06
JPS59172759A (ja) 1984-09-29
DE3410580C2 (https=) 1987-05-27

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee