DE3390131T1 - Thyristor und Verfahren zu seiner Herstellung - Google Patents

Thyristor und Verfahren zu seiner Herstellung

Info

Publication number
DE3390131T1
DE3390131T1 DE19833390131 DE3390131T DE3390131T1 DE 3390131 T1 DE3390131 T1 DE 3390131T1 DE 19833390131 DE19833390131 DE 19833390131 DE 3390131 T DE3390131 T DE 3390131T DE 3390131 T1 DE3390131 T1 DE 3390131T1
Authority
DE
Germany
Prior art keywords
electrode
main surface
controllable
recess
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19833390131
Other languages
German (de)
English (en)
Inventor
Toyohiko Itami Hyogo Kiyohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3390131T1 publication Critical patent/DE3390131T1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H10W76/138—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
DE19833390131 1982-07-26 1983-07-14 Thyristor und Verfahren zu seiner Herstellung Ceased DE3390131T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131434A JPS5921062A (ja) 1982-07-26 1982-07-26 サイリスタ

Publications (1)

Publication Number Publication Date
DE3390131T1 true DE3390131T1 (de) 1984-09-06

Family

ID=15057867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833390131 Ceased DE3390131T1 (de) 1982-07-26 1983-07-14 Thyristor und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US4677454A (cg-RX-API-DMAC10.html)
JP (1) JPS5921062A (cg-RX-API-DMAC10.html)
DE (1) DE3390131T1 (cg-RX-API-DMAC10.html)
WO (1) WO1984000641A1 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120468A (ja) * 1984-11-16 1986-06-07 Hitachi Ltd 光半導体装置
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
JP3469304B2 (ja) * 1994-04-12 2003-11-25 三菱電機株式会社 半導体装置
JPH08330608A (ja) * 1995-05-29 1996-12-13 Oki Electric Ind Co Ltd 受光センサおよび受発光センサ
RU2591744C2 (ru) * 2014-12-08 2016-07-20 Открытое акционерное общество "Электровыпрямитель" Тиристор
CN109599030B (zh) * 2017-09-30 2020-12-11 昆山国显光电有限公司 显示屏及电子产品

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE623873A (cg-RX-API-DMAC10.html) * 1961-10-24 1900-01-01
AT234845B (de) * 1962-03-24 1964-07-27 Siemens Ag Steuerbare Halbleiteranordnung
DE1514474C3 (de) * 1965-06-05 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
DE2257078A1 (de) * 1972-11-21 1974-05-30 Siemens Ag Halbleiterbauelement mit druckkontakt
US4009485A (en) * 1974-12-23 1977-02-22 General Electric Company Semiconductor pellet assembly mounted on ceramic substrate
JPS51151872A (en) * 1975-06-23 1976-12-27 Hitachi Ltd Contact type position detecting device
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
JPS5730350A (en) * 1980-07-30 1982-02-18 Nec Corp Elat type semiconductor device

Also Published As

Publication number Publication date
JPS6213822B2 (cg-RX-API-DMAC10.html) 1987-03-28
WO1984000641A1 (fr) 1984-02-16
JPS5921062A (ja) 1984-02-02
US4677454A (en) 1987-06-30

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Legal Events

Date Code Title Description
8131 Rejection