DE3382481D1 - Gestaltete feld-magnetronelektrode. - Google Patents

Gestaltete feld-magnetronelektrode.

Info

Publication number
DE3382481D1
DE3382481D1 DE8383306089T DE3382481T DE3382481D1 DE 3382481 D1 DE3382481 D1 DE 3382481D1 DE 8383306089 T DE8383306089 T DE 8383306089T DE 3382481 T DE3382481 T DE 3382481T DE 3382481 D1 DE3382481 D1 DE 3382481D1
Authority
DE
Germany
Prior art keywords
field magnetic
magnetic electrode
designed field
designed
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383306089T
Other languages
English (en)
Inventor
Walter H Class
Steven D Hurwitt
Lin I
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materials Research Corp
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of DE3382481D1 publication Critical patent/DE3382481D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8383306089T 1983-01-26 1983-10-07 Gestaltete feld-magnetronelektrode. Expired - Lifetime DE3382481D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/461,022 US4581118A (en) 1983-01-26 1983-01-26 Shaped field magnetron electrode

Publications (1)

Publication Number Publication Date
DE3382481D1 true DE3382481D1 (de) 1992-01-30

Family

ID=23830926

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383306089T Expired - Lifetime DE3382481D1 (de) 1983-01-26 1983-10-07 Gestaltete feld-magnetronelektrode.

Country Status (5)

Country Link
US (1) US4581118A (de)
EP (1) EP0115119B1 (de)
JP (1) JPS59140375A (de)
CA (1) CA1195951A (de)
DE (1) DE3382481D1 (de)

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US4721891A (en) * 1986-04-17 1988-01-26 The Regents Of The University Of California Axial flow plasma shutter
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
DE3852430T2 (de) * 1987-06-16 1995-05-04 Hitachi Ltd Magnetron-Zerstäubungsgerät und Verfahren zur Anwendung desselben zur Schichtenherstellung.
GB2209769A (en) * 1987-09-16 1989-05-24 Ion Tech Ltd Sputter coating
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
DE3837487A1 (de) * 1988-11-04 1990-05-10 Leybold Ag Verfahren und vorrichtung zum aetzen von substraten mit einer magnetfeldunterstuetzten niederdruck-entladung
JPH0791645B2 (ja) * 1989-04-28 1995-10-04 株式会社日立製作所 薄膜形成装置
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
DE4042417C2 (de) * 1990-07-17 1993-11-25 Balzers Hochvakuum Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
US5147520A (en) * 1991-02-15 1992-09-15 Mcnc Apparatus and method for controlling processing uniformity in a magnetron
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5411624A (en) * 1991-07-23 1995-05-02 Tokyo Electron Limited Magnetron plasma processing apparatus
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
US5589039A (en) * 1995-07-28 1996-12-31 Sony Corporation In-plane parallel bias magnetic field generator for sputter coating magnetic materials onto substrates
DE19643841A1 (de) * 1996-10-30 1998-05-07 Balzers Prozess Systeme Gmbh Vorrichtung zum Beschichten von Substraten, insbesondere mit magnetisierbaren Werkstoffen
AU9410498A (en) 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
JPH11172432A (ja) * 1997-12-16 1999-06-29 Hitachi Ltd 磁性膜形成装置
US6136166A (en) * 1998-03-27 2000-10-24 Read-Rite Corporation Apparatus for producing a uniform magnetic field over a large surface area of a wafer
US6095160A (en) * 1998-04-06 2000-08-01 Chu; Xi In-situ magnetron assisted DC plasma etching apparatus and method for cleaning magnetic recording disks
US6042707A (en) * 1998-05-22 2000-03-28 Cvc Products, Inc. Multiple-coil electromagnet for magnetically orienting thin films
US6106682A (en) * 1998-05-22 2000-08-22 Cvc Products, Inc. Thin-film processing electromagnet for low-skew magnetic orientation
GB2340845B (en) * 1998-08-19 2001-01-31 Kobe Steel Ltd Magnetron sputtering apparatus
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US5997705A (en) * 1999-04-14 1999-12-07 Vapor Technologies, Inc. Rectangular filtered arc plasma source
US6352626B1 (en) 1999-04-19 2002-03-05 Von Zweck Heimart Sputter ion source for boron and other targets
US6143140A (en) * 1999-08-16 2000-11-07 Applied Materials, Inc. Method and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic field
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
KR100557583B1 (ko) * 1999-12-30 2006-03-03 주식회사 하이닉스반도체 반도체 소자의 평탄화 방법
KR100554426B1 (ko) * 2000-05-12 2006-02-22 동경 엘렉트론 주식회사 플라즈마 처리시스템에서의 전극의 두께 조정방법
US6413380B1 (en) * 2000-08-14 2002-07-02 International Business Machines Corporation Method and apparatus for providing deposited layer structures and articles so produced
EP1336985A1 (de) * 2002-02-19 2003-08-20 Singulus Technologies AG Zerstäubungskathode und Vorrichtung und Verfahren zum Beschichten eines Substrates mit mehreren Schichten
DE10234859B4 (de) * 2002-07-31 2007-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung und Verfahren zum Beschichten von Substraten
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US7049606B2 (en) * 2003-10-30 2006-05-23 Applied Materials, Inc. Electron beam treatment apparatus
JP4682371B2 (ja) * 2004-05-24 2011-05-11 独立行政法人物質・材料研究機構 磁場制御を施した陽極を備えてなる単一電源型スパッタリング装置
US7498587B2 (en) * 2006-05-01 2009-03-03 Vapor Technologies, Inc. Bi-directional filtered arc plasma source
US7538546B2 (en) * 2006-11-10 2009-05-26 Infinitum Solutions, Inc. In-plane magnetic field generation and testing of magnetic sensor
CN101583736A (zh) * 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
FR2926161B1 (fr) * 2008-01-04 2012-02-10 Horiba Jobin Yvon Sas Source magnetron pour spectrometre a decharge luminescente.
TWI381472B (zh) * 2008-01-15 2013-01-01 Ulvac Inc 基板載置台、具備其之濺鍍裝置及成膜方法
US20090321248A1 (en) * 2008-06-30 2009-12-31 Tousimis Anastasios J Low damage sputtering system and method
CN102560373B (zh) * 2010-12-16 2014-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 基片加热腔室、使用基片加热腔室的方法及基片处理设备
JP5711581B2 (ja) * 2011-03-25 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置
CN109706432B (zh) * 2017-12-11 2021-04-06 绍兴市载沣智能科技有限公司 圆形磁力电极装置及包括其的卷绕式表面改性设备

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NL50072C (de) * 1935-12-28
US4041353A (en) * 1971-09-07 1977-08-09 Telic Corporation Glow discharge method and apparatus
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
US4180450A (en) * 1978-08-21 1979-12-25 Vac-Tec Systems, Inc. Planar magnetron sputtering device
JPS6016515B2 (ja) * 1978-11-15 1985-04-25 豊田合成株式会社 低温スパツタリング装置
US4194962A (en) * 1978-12-20 1980-03-25 Advanced Coating Technology, Inc. Cathode for sputtering
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
US4404077A (en) * 1981-04-07 1983-09-13 Fournier Paul R Integrated sputtering apparatus and method
GB2096177B (en) * 1981-04-07 1985-07-17 Fournier Paul R Improved integrated sputtering apparatus and method
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
JPS59169450U (ja) * 1983-04-28 1984-11-13 自動車電機工業株式会社 自動車用モ−タの減速装置

Also Published As

Publication number Publication date
EP0115119A2 (de) 1984-08-08
CA1195951A (en) 1985-10-29
JPS59140375A (ja) 1984-08-11
EP0115119A3 (en) 1986-04-16
EP0115119B1 (de) 1991-12-18
US4581118A (en) 1986-04-08
JPS6330987B2 (de) 1988-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee