DE3381875D1 - Beim lesen rueckstellbare speicherschaltung. - Google Patents

Beim lesen rueckstellbare speicherschaltung.

Info

Publication number
DE3381875D1
DE3381875D1 DE8383200518T DE3381875T DE3381875D1 DE 3381875 D1 DE3381875 D1 DE 3381875D1 DE 8383200518 T DE8383200518 T DE 8383200518T DE 3381875 T DE3381875 T DE 3381875T DE 3381875 D1 DE3381875 D1 DE 3381875D1
Authority
DE
Germany
Prior art keywords
reading
memory circuit
resettable memory
resettable
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383200518T
Other languages
English (en)
Inventor
Singh Bagawatch Yalamanchili
Syed Tayyed Mahmud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3381875D1 publication Critical patent/DE3381875D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356052Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE8383200518T 1982-04-14 1983-04-12 Beim lesen rueckstellbare speicherschaltung. Expired - Lifetime DE3381875D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/368,182 US4459683A (en) 1982-04-14 1982-04-14 Read resettable memory circuit

Publications (1)

Publication Number Publication Date
DE3381875D1 true DE3381875D1 (de) 1990-10-18

Family

ID=23450181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383200518T Expired - Lifetime DE3381875D1 (de) 1982-04-14 1983-04-12 Beim lesen rueckstellbare speicherschaltung.

Country Status (4)

Country Link
US (1) US4459683A (de)
EP (1) EP0091721B1 (de)
JP (1) JPS58209219A (de)
DE (1) DE3381875D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4506349A (en) * 1982-12-20 1985-03-19 General Electric Company Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation
JPS6271088A (ja) * 1985-09-24 1987-04-01 Hitachi Ltd スタテイツク型ram
JPS62222711A (ja) * 1986-03-11 1987-09-30 Fujitsu Ltd ラツチ回路
US5732015A (en) * 1991-04-23 1998-03-24 Waferscale Integration, Inc. SRAM with a programmable reference voltage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224533A (en) * 1978-08-07 1980-09-23 Signetics Corporation Edge triggered flip flop with multiple clocked functions
US4379241A (en) * 1980-05-14 1983-04-05 Motorola, Inc. Edge defined output buffer circuit

Also Published As

Publication number Publication date
EP0091721A2 (de) 1983-10-19
JPH0263275B2 (de) 1990-12-27
JPS58209219A (ja) 1983-12-06
EP0091721A3 (en) 1987-08-19
EP0091721B1 (de) 1990-09-12
US4459683A (en) 1984-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee