DE3376714D1 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- DE3376714D1 DE3376714D1 DE8383304053T DE3376714T DE3376714D1 DE 3376714 D1 DE3376714 D1 DE 3376714D1 DE 8383304053 T DE8383304053 T DE 8383304053T DE 3376714 T DE3376714 T DE 3376714T DE 3376714 D1 DE3376714 D1 DE 3376714D1
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57122940A JPS5914679A (ja) | 1982-07-16 | 1982-07-16 | 光起電力装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3376714D1 true DE3376714D1 (en) | 1988-06-23 |
Family
ID=14848370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383304053T Expired DE3376714D1 (en) | 1982-07-16 | 1983-07-12 | Photovoltaic device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4500744A (de) |
EP (1) | EP0099720B1 (de) |
JP (1) | JPS5914679A (de) |
DE (1) | DE3376714D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0620147B2 (ja) * | 1984-05-11 | 1994-03-16 | 三洋電機株式会社 | 光起電力装置 |
JPS61222278A (ja) * | 1985-03-28 | 1986-10-02 | Sanyo Electric Co Ltd | 光起電力装置 |
JP2545066B2 (ja) * | 1985-11-14 | 1996-10-16 | 鐘淵化学工業株式会社 | 半導体装置 |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
US4718947A (en) * | 1986-04-17 | 1988-01-12 | Solarex Corporation | Superlattice doped layers for amorphous silicon photovoltaic cells |
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH0752778B2 (ja) * | 1987-09-14 | 1995-06-05 | 三洋電機株式会社 | 光起電力装置 |
JPH068703B2 (ja) * | 1987-11-13 | 1994-02-02 | 株式会社東芝 | 空気調和装置 |
US5117114A (en) * | 1989-12-11 | 1992-05-26 | The Regents Of The University Of California | High resolution amorphous silicon radiation detectors |
US5055141A (en) * | 1990-01-19 | 1991-10-08 | Solarex Corporation | Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells |
JP2729707B2 (ja) * | 1991-03-27 | 1998-03-18 | 極東工業株式会社 | 建築設備の吊設支持構造 |
EP0886325A1 (de) * | 1997-06-18 | 1998-12-23 | Rijksuniversiteit Utrecht | Photovoltaische Anordnungen aus amorphem Silizium und Herstellungsverfahren |
EP1056139A3 (de) * | 1999-05-28 | 2007-09-19 | Sharp Kabushiki Kaisha | Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren |
US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
DE102008014260A1 (de) * | 2008-03-13 | 2009-09-24 | Schott Solar Gmbh | Silizium-Solarzelle |
US20110155229A1 (en) * | 2009-12-30 | 2011-06-30 | Du Pont Apollo Ltd. | Solar cell and method for manufacturing the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688377A (en) * | 1979-12-19 | 1981-07-17 | Mitsubishi Electric Corp | Solar battery and manufacture thereof |
JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
IN157458B (de) * | 1980-09-09 | 1986-04-05 | Energy Conversion Devices Inc |
-
1982
- 1982-07-16 JP JP57122940A patent/JPS5914679A/ja active Pending
-
1983
- 1983-07-12 EP EP83304053A patent/EP0099720B1/de not_active Expired
- 1983-07-12 DE DE8383304053T patent/DE3376714D1/de not_active Expired
- 1983-07-13 US US06/513,390 patent/US4500744A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4500744A (en) | 1985-02-19 |
EP0099720A2 (de) | 1984-02-01 |
JPS5914679A (ja) | 1984-01-25 |
EP0099720B1 (de) | 1988-05-18 |
EP0099720A3 (en) | 1985-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |