DE3374626D1 - Charged particle beam exposure device incorporating beam splitting - Google Patents
Charged particle beam exposure device incorporating beam splittingInfo
- Publication number
- DE3374626D1 DE3374626D1 DE8383200239T DE3374626T DE3374626D1 DE 3374626 D1 DE3374626 D1 DE 3374626D1 DE 8383200239 T DE8383200239 T DE 8383200239T DE 3374626 T DE3374626 T DE 3374626T DE 3374626 D1 DE3374626 D1 DE 3374626D1
- Authority
- DE
- Germany
- Prior art keywords
- charged particle
- exposure device
- device incorporating
- particle beam
- beam splitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8200559A NL8200559A (nl) | 1982-02-15 | 1982-02-15 | Bestralingsinrichting met bundelsplitsing. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3374626D1 true DE3374626D1 (en) | 1987-12-23 |
Family
ID=19839255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383200239T Expired DE3374626D1 (en) | 1982-02-15 | 1983-02-14 | Charged particle beam exposure device incorporating beam splitting |
Country Status (5)
Country | Link |
---|---|
US (1) | US4524278A (de) |
EP (1) | EP0087196B1 (de) |
JP (1) | JPS58155637A (de) |
DE (1) | DE3374626D1 (de) |
NL (1) | NL8200559A (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8201732A (nl) * | 1982-04-27 | 1983-11-16 | Bernardus Johannes Gerardus Ma | Bestralingsinrichting met bundelsplitsing. |
DE3504705A1 (de) * | 1985-02-12 | 1986-08-14 | Siemens AG, 1000 Berlin und 8000 München | Aperturblende mit zellenfoermiger mehrlochstruktur und austastelektroden zur erzeugung einer mehrzahl von individuell austastbaren korpuskularstrahlsonden fuer ein lithografiegeraet |
NL8502275A (nl) * | 1985-08-19 | 1987-03-16 | Philips Nv | In slanke deelbundels opgedeelde bundel geladen deeltjes. |
GB8617384D0 (en) * | 1986-07-16 | 1986-08-20 | Spectros Ltd | Charged particle optical systems |
EP0289885A1 (de) * | 1987-05-08 | 1988-11-09 | Siemens Aktiengesellschaft | Blendensystem zur Erzeugung mehrerer Teilchensonden mit veränderbarem Querschnitt |
US4996441A (en) * | 1988-09-16 | 1991-02-26 | Siemens Aktiengesellschaft | Lithographic apparatus for structuring a subject |
US5012105A (en) * | 1989-02-02 | 1991-04-30 | Nippon Seiko Kabushiki Kaisha | Multiple-imaging charged particle-beam exposure system |
JPH07191199A (ja) * | 1993-12-27 | 1995-07-28 | Fujitsu Ltd | 荷電粒子ビーム露光システム及び露光方法 |
US5696375A (en) * | 1995-11-17 | 1997-12-09 | Bruker Analytical Instruments, Inc. | Multideflector |
US6888146B1 (en) * | 1998-04-10 | 2005-05-03 | The Regents Of The University Of California | Maskless micro-ion-beam reduction lithography system |
US6157039A (en) * | 1998-05-07 | 2000-12-05 | Etec Systems, Inc. | Charged particle beam illumination of blanking aperture array |
US6989546B2 (en) | 1998-08-19 | 2006-01-24 | Ims-Innenmikrofabrikations Systeme Gmbh | Particle multibeam lithography |
KR100339140B1 (ko) * | 1999-04-28 | 2002-05-31 | 히로시 오우라 | 전자빔 노출 장치 |
JP2001052998A (ja) * | 1999-06-03 | 2001-02-23 | Advantest Corp | 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置 |
GB2369241A (en) * | 1999-06-03 | 2002-05-22 | Advantest Corp | Charged particle beam exposure device with aberration correction |
DE10084761T1 (de) * | 1999-07-02 | 2002-07-11 | Michael Mauck | Verfahren und Gerät zum gleichzeitigen Abscheiden und Beobachten von Materialien auf einem Target |
EP1150327B1 (de) * | 2000-04-27 | 2018-02-14 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Mehrstrahl Ladungsträgerstrahlvorrichtung |
JP2004207571A (ja) * | 2002-12-26 | 2004-07-22 | Toshiba Corp | 半導体装置の製造方法、半導体製造装置及びステンシルマスク |
EP1602121B1 (de) * | 2003-03-10 | 2012-06-27 | Mapper Lithography Ip B.V. | Vorrichtung zur erzeugung einer vielzahl von teilstrahlen |
EP1577926A1 (de) * | 2004-03-19 | 2005-09-21 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Teilchenstrahlsystem mit hoher Stromdichte |
US7176452B2 (en) * | 2005-04-15 | 2007-02-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated beam modulation device |
DE102007033432A1 (de) | 2007-07-18 | 2009-01-22 | Heidelberger Druckmaschinen Ag | Druckmaschine mit elektrischem Quetschschutz |
DE202013012875U1 (de) | 2012-05-14 | 2021-01-15 | Nippon Suisan Kaisha, Ltd. | Zusammensetzung, umfassend hochungesättigte Fettsäure oder hochungesättigten Fettsäureethylester mit verringerten Umweltschadstoffen |
JP2014229481A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
JP6349944B2 (ja) * | 2014-05-13 | 2018-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3491236A (en) * | 1967-09-28 | 1970-01-20 | Gen Electric | Electron beam fabrication of microelectronic circuit patterns |
JPS5116754B1 (de) * | 1970-03-04 | 1976-05-27 | ||
US3935500A (en) * | 1974-12-09 | 1976-01-27 | Texas Instruments Incorporated | Flat CRT system |
JPS52119178A (en) * | 1976-03-31 | 1977-10-06 | Toshiba Corp | Electron beam exposure device |
CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
US4227117A (en) * | 1978-04-28 | 1980-10-07 | Matsuhita Electric Industrial Co., Ltd. | Picture display device |
FR2443085A1 (fr) * | 1978-07-24 | 1980-06-27 | Thomson Csf | Dispositif de microlithographie par bombardement electronique |
US4472636A (en) * | 1979-11-01 | 1984-09-18 | Eberhard Hahn | Method of and device for corpuscular projection |
JPS57206029A (en) * | 1981-06-15 | 1982-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Drawing device by electron beam |
-
1982
- 1982-02-15 NL NL8200559A patent/NL8200559A/nl not_active Application Discontinuation
-
1983
- 1983-02-14 EP EP83200239A patent/EP0087196B1/de not_active Expired
- 1983-02-14 DE DE8383200239T patent/DE3374626D1/de not_active Expired
- 1983-02-14 US US06/465,937 patent/US4524278A/en not_active Expired - Fee Related
- 1983-02-15 JP JP58022243A patent/JPS58155637A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58155637A (ja) | 1983-09-16 |
JPH0441457B2 (de) | 1992-07-08 |
NL8200559A (nl) | 1983-09-01 |
EP0087196A1 (de) | 1983-08-31 |
US4524278A (en) | 1985-06-18 |
EP0087196B1 (de) | 1987-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |