DE3371838D1 - Method of making a display comprising thin-film transistors and capacitors - Google Patents

Method of making a display comprising thin-film transistors and capacitors

Info

Publication number
DE3371838D1
DE3371838D1 DE8383401775T DE3371838T DE3371838D1 DE 3371838 D1 DE3371838 D1 DE 3371838D1 DE 8383401775 T DE8383401775 T DE 8383401775T DE 3371838 T DE3371838 T DE 3371838T DE 3371838 D1 DE3371838 D1 DE 3371838D1
Authority
DE
Germany
Prior art keywords
capacitors
thin
display
making
film transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401775T
Other languages
English (en)
Inventor
Pierre Coissard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3371838D1 publication Critical patent/DE3371838D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
DE8383401775T 1982-09-14 1983-09-12 Method of making a display comprising thin-film transistors and capacitors Expired DE3371838D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8215499A FR2533072B1 (fr) 1982-09-14 1982-09-14 Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs

Publications (1)

Publication Number Publication Date
DE3371838D1 true DE3371838D1 (en) 1987-07-02

Family

ID=9277431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401775T Expired DE3371838D1 (en) 1982-09-14 1983-09-12 Method of making a display comprising thin-film transistors and capacitors

Country Status (7)

Country Link
US (1) US4563806A (de)
EP (1) EP0103523B1 (de)
JP (1) JPS59501562A (de)
CA (1) CA1224262A (de)
DE (1) DE3371838D1 (de)
FR (1) FR2533072B1 (de)
WO (1) WO1984001239A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123847A (en) * 1983-05-11 1992-06-23 Holmberg Scott H Method of manufacturing flat panel backplanes, display transistors
FR2571913B1 (fr) * 1984-10-17 1986-12-26 Richard Joseph Ecran d'affichage a matrice active a double transistor d'adressage
DE3567770D1 (en) * 1984-10-17 1989-02-23 France Etat Method for producing electronic circuits based on thin layers transistors and capacitors
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
FR2579806B1 (fr) * 1985-03-26 1987-05-07 Morin Francois Procede de fabrication d'un ecran d'affichage a cristaux liquides et a reseau de diodes
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
FR2586859B1 (fr) * 1985-08-27 1987-11-20 Thomson Csf Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede
JPS61160428U (de) * 1985-10-28 1986-10-04
FR2590406B1 (fr) * 1985-11-15 1988-10-28 Commissariat Energie Atomique Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci
FR2593327B1 (fr) * 1986-01-23 1988-10-28 Commissariat Energie Atomique Procede de fabrication d'un transistor en couches minces utilisant deux ou trois niveaux de masquage
FR2593632B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et procedes de realisation de cet ecran
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
FR2593629B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active et a redondance lignes et colonnes
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
FR2602361B1 (fr) * 1986-01-27 1989-05-19 Maurice Francois Ecran d'affichage a matrice active sans transistor parasite et procede de fabrication de cet ecran
US4704783A (en) * 1986-05-05 1987-11-10 General Electric Company Method for passivating the back channel of amorphous silicon field effect transistors
FR2601801B1 (fr) * 1986-07-16 1988-09-16 Morin Francois Ecran d'affichage a matrice active utilisant du carbure de silicium amorphe hydrogene et procede de fabrication de cet ecran
FR2605442B1 (fr) * 1986-10-17 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
FR2605438B1 (fr) * 1986-10-17 1989-12-15 Maurice Francois Ecran d'affichage a cristaux liquides concu pour eliminer les defauts dus aux espaceurs
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
JP2501118B2 (ja) * 1988-06-17 1996-05-29 忠弘 大見 半導体装置の製造方法
FR2640809B1 (fr) * 1988-12-19 1993-10-22 Chouan Yannick Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor
US5148333A (en) * 1988-12-21 1992-09-15 Sony Corp. Method for recording and/or reproducing a signal
DE68921591T2 (de) * 1988-12-28 1995-11-09 Sony Corp Flüssigkristall-Anzeigevorrichtung.
US4968119A (en) * 1989-01-10 1990-11-06 David Sarnoff Research Center, Inc. High-density liquid-crystal active dot-matrix display structure
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JPH0772510A (ja) * 1993-09-07 1995-03-17 Hitachi Ltd アクティブマトリクス型液晶表示装置
US5546204A (en) * 1994-05-26 1996-08-13 Honeywell Inc. TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
FR2721428B1 (fr) 1994-06-17 1996-09-13 France Telecom Ecran d'affichage à matrice active à commande multiplexée.
US5691782A (en) * 1994-07-08 1997-11-25 Sanyo Electric Co., Ltd. Liquid-crystal display with inter-line short-circuit preventive function and process for producing same
TW347477B (en) * 1994-09-30 1998-12-11 Sanyo Electric Co Liquid crystal display with storage capacitors for holding electric charges
US5777703A (en) * 1994-09-30 1998-07-07 Sanyo Electric Co., Ltd. Active matrix type liquid crystal display apparatus with a projection part in the drain line
JP3081474B2 (ja) * 1994-11-11 2000-08-28 三洋電機株式会社 液晶表示装置
FR2732781B1 (fr) * 1995-04-07 1997-06-20 Thomson Lcd Procede de fabrication de matrice active tft pour ecran de systeme de projection
JPH09318975A (ja) * 1996-05-30 1997-12-12 Nec Corp 薄膜電界効果型トランジスタ素子アレイおよびその製造 方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024626A (en) * 1974-12-09 1977-05-24 Hughes Aircraft Company Method of making integrated transistor matrix for flat panel liquid crystal display
US4188095A (en) * 1975-07-29 1980-02-12 Citizen Watch Co., Ltd. Liquid type display cells and method of manufacturing the same
US4167806A (en) * 1976-09-28 1979-09-18 Commissariat A L'energie Atomique Method of fabrication of an amorphous semiconductor device on a substrate
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
FR2478879A1 (fr) * 1980-03-24 1981-09-25 Commissariat Energie Atomique Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
JPS56162793A (en) * 1980-05-19 1981-12-14 Canon Kk Display unit
JPS56161676A (en) * 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
FR2518810A1 (fr) * 1981-12-23 1983-06-24 Morin Francois Procede de fabrication de transistors en couches minces en silicium sur substrat isolant

Also Published As

Publication number Publication date
JPS59501562A (ja) 1984-08-30
WO1984001239A1 (fr) 1984-03-29
EP0103523A1 (de) 1984-03-21
CA1224262A (fr) 1987-07-14
FR2533072A1 (fr) 1984-03-16
FR2533072B1 (fr) 1986-07-18
EP0103523B1 (de) 1987-05-27
US4563806A (en) 1986-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FRANCE TELECOM, PARIS, FR

8328 Change in the person/name/address of the agent

Free format text: GRUENECKER, A., DIPL.-ING. KINKELDEY, H., DIPL.-ING. DR.-ING. STOCKMAIR, W., DIPL.-ING. DR.-ING. AE.E. CAL TECH SCHUMANN, K., DIPL.-PHYS. DR.RER.NAT. JAKOB, P., DIPL.-ING. BEZOLD, G., DIPL.-CHEM. DR.RER.NAT. MEISTER, W., DIPL.-ING. HILGERS, H., DIPL.-ING. MEYER-PLATH, H., DIPL.-ING. DR.-ING. EHNOLD, A., DIPL.-ING. SCHUSTER, T., DIPL.-PHYS. GOLDBACH, K., DIPL.-ING.DR.-ING. AUFENANGER, M., DIPL.-ING. KLITZSCH, G., DIPL.-ING. VOGELSANG-WENKE, H., DIPL.-CHEM. DIPL.-BIOL.UNIV. DR.RER.NAT., PAT.-ANWAE

8381 Inventor (new situation)

Free format text: COISSARD, PIERRE, LANNION, FR RICHARD, JOSEPH, LANNION, FR MORIN, FRANCOIS, LANNION, FR