DE3370829D1 - Depositing a film onto a substrate including electron-beam evaporation - Google Patents

Depositing a film onto a substrate including electron-beam evaporation

Info

Publication number
DE3370829D1
DE3370829D1 DE8383305705T DE3370829T DE3370829D1 DE 3370829 D1 DE3370829 D1 DE 3370829D1 DE 8383305705 T DE8383305705 T DE 8383305705T DE 3370829 T DE3370829 T DE 3370829T DE 3370829 D1 DE3370829 D1 DE 3370829D1
Authority
DE
Germany
Prior art keywords
depositing
substrate including
beam evaporation
film onto
including electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383305705T
Other languages
English (en)
Inventor
Joseph Chapman Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Application granted granted Critical
Publication of DE3370829D1 publication Critical patent/DE3370829D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DE8383305705T 1982-09-29 1983-09-23 Depositing a film onto a substrate including electron-beam evaporation Expired DE3370829D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8227776 1982-09-29

Publications (1)

Publication Number Publication Date
DE3370829D1 true DE3370829D1 (en) 1987-05-14

Family

ID=10533249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383305705T Expired DE3370829D1 (en) 1982-09-29 1983-09-23 Depositing a film onto a substrate including electron-beam evaporation

Country Status (5)

Country Link
US (1) US4698235A (de)
EP (1) EP0104916B1 (de)
JP (1) JPS5987040A (de)
DE (1) DE3370829D1 (de)
GB (2) GB8324779D0 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
GB8431422D0 (en) * 1984-12-13 1985-01-23 Standard Telephones Cables Ltd Plasma reactor vessel
EP0209972A1 (de) * 1985-06-05 1987-01-28 Plessey Overseas Limited Verfahren zum Niederschlagen von Germaniumwasserstoffcarbid
US4806431A (en) * 1985-06-24 1989-02-21 Lockheed Missiles & Space Company, Inc. Composites coated with boron-silicon-oxide films
EP0208487A3 (de) * 1985-07-01 1987-08-19 United Kingdom Atomic Energy Authority Beschichtungsverfahren
JP3433760B2 (ja) * 1993-05-14 2003-08-04 ソニー株式会社 光ディスクの保護膜機
US5558720A (en) * 1996-01-11 1996-09-24 Thermacore, Inc. Rapid response vapor source
JP3801418B2 (ja) * 1999-05-14 2006-07-26 株式会社Ｎｅｏｍａｘ 表面処理方法
ITRM20010060A1 (it) * 2001-02-06 2001-05-07 Carlo Misiano Perfezionamento di un metodo e apparato per la deposizione di film sottili, soprattutto in condizioni reattive.
KR20040039012A (ko) * 2002-10-30 2004-05-10 주식회사 실트론 실리콘 잉곳의 성장 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2784115A (en) * 1953-05-04 1957-03-05 Eastman Kodak Co Method of producing titanium dioxide coatings
US2932588A (en) * 1955-07-06 1960-04-12 English Electric Valve Co Ltd Methods of manufacturing thin films of refractory dielectric materials
US2930002A (en) * 1957-06-24 1960-03-22 Rca Corp Oscillator
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3333639A (en) * 1964-11-27 1967-08-01 John S Page Parallel string installation for single-zone production
US3617375A (en) * 1969-08-11 1971-11-02 Texas Instruments Inc Electron beam evaporated quartz insulating material process
US3791852A (en) * 1972-06-16 1974-02-12 Univ California High rate deposition of carbides by activated reactive evaporation
US3984581A (en) * 1973-02-28 1976-10-05 Carl Zeiss-Stiftung Method for the production of anti-reflection coatings on optical elements made of transparent organic polymers
US3953652A (en) * 1973-04-05 1976-04-27 Itek Corporation Process for coating glass onto polymeric substrates
GB1500701A (en) * 1974-01-24 1978-02-08 Atomic Energy Authority Uk Vapour deposition apparatus
US4006268A (en) * 1975-03-17 1977-02-01 Airco, Inc. Vapor collimation in vacuum deposition of coatings
CH610013A5 (de) * 1975-11-19 1979-03-30 Battelle Memorial Institute
CA1102013A (en) * 1977-05-26 1981-05-26 Chin-An Chang Molecular-beam epitaxy system and method including hydrogen treatment
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
DE2812311C2 (de) * 1978-03-21 1986-10-09 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum gleichzeitigen Vakuumaufdampfen dünner Schichten auf mehrere Substrate mittels Elektronenstrahlen und Anwendung auf die Bedampfung von Turbinenschaufeln
JPS5669819A (en) * 1979-11-12 1981-06-11 Canon Inc Manufacture of amorphous silicon hydride layer
JPS5678412A (en) * 1979-11-22 1981-06-27 Sumitomo Electric Ind Ltd Preparation of noncrystalline silicone film
EP0029747A1 (de) * 1979-11-27 1981-06-03 Konica Corporation Vorrichtung zum Aufdampfen im Vakuum und Verfahren zum Formen einer dünnen Schicht unter Verwendung dieser Vorrichtung
JPS5678112A (en) * 1979-11-30 1981-06-26 Toshiba Corp Cutting and rounding device of metal wire
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
JPS5698819A (en) * 1980-01-09 1981-08-08 Nec Corp Method of preparing thin film of amorphous silicon
US4297387A (en) * 1980-06-04 1981-10-27 Battelle Development Corporation Cubic boron nitride preparation
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys

Also Published As

Publication number Publication date
GB8324779D0 (en) 1983-10-19
GB2127438B (en) 1986-07-30
US4698235A (en) 1987-10-06
EP0104916A2 (de) 1984-04-04
EP0104916A3 (en) 1984-12-27
JPS5987040A (ja) 1984-05-19
EP0104916B1 (de) 1987-04-08
GB2127438A (en) 1984-04-11
GB8325495D0 (en) 1983-10-26

Similar Documents

Publication Publication Date Title
GB2128637B (en) Depositing a carbon film on a substrate
DE3370238D1 (en) Thin film deposition by sputtering
IL58488A0 (en) Deposition of a film of controlled composition on a substrate
AU544194B2 (en) Oriented polypropylene film substrate
GB2085482B (en) Forming thin film oxide layers using reactive evaporation techniques
GB2067104B (en) Coating a filament
GB8313636D0 (en) Falling film evaporation type
AU564776B2 (en) Depositing thin transmissive film on semiconductor
DE3370829D1 (en) Depositing a film onto a substrate including electron-beam evaporation
GB2193976B (en) Process for depositing a polysilicon film on a substrate
DE3371801D1 (en) A substrate for manufacturing single crystal thin films
DE3567990D1 (en) Photolythographic process for thick film paste deposited on a substrate
DE2966532D1 (en) Evaporative dispenser
DE3165163D1 (en) A process for forming a coating film
JPS54110988A (en) Coating vacuum evaporation apparatus
AU568474B2 (en) Thin film deposition
GB2119970B (en) Film deposition equipment
ES526858A0 (es) Un procedimiento para revestir electricamente un sustrato con un material en polvo.
GB2084197B (en) Deposition material by vacuum evaporation
DE3475297D1 (en) Process for forming a thin insulative coating on a substrate
AU558179B2 (en) Coating a surface
EP0055800A3 (en) A method of depositing a polymer film on a substrate
AU1862783A (en) Coating a surface
EP0133916A3 (en) Process for forming a thin insulative coating on a substrate
JPS5536966A (en) Thick film substrate part carrying structure

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee