JPS5698819A - Method of preparing thin film of amorphous silicon - Google Patents

Method of preparing thin film of amorphous silicon

Info

Publication number
JPS5698819A
JPS5698819A JP117580A JP117580A JPS5698819A JP S5698819 A JPS5698819 A JP S5698819A JP 117580 A JP117580 A JP 117580A JP 117580 A JP117580 A JP 117580A JP S5698819 A JPS5698819 A JP S5698819A
Authority
JP
Japan
Prior art keywords
torr
substrate
thin film
occurrence
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP117580A
Other languages
Japanese (ja)
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP117580A priority Critical patent/JPS5698819A/en
Publication of JPS5698819A publication Critical patent/JPS5698819A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon

Abstract

PURPOSE:To prevent the occurrence of a crystal deffect and improve the optical conductivity due to a lower gas pressure by setting a amorphous Si thin film performing an ion plating with a use of H2 gas less than 10<-2> Torr. CONSTITUTION:A clear and pure glass substrate is set on a holder 9. When a H2 is introduced at less than 10<-6> Torr vacuum to make a chamber 2X10<-4> Torr, the vaccum in a beam occurrence chamber 3 becomes approximately 10<-6> Torr by a differential vacuum plate 2, whereby the operation of an electron beam evaporation source 7 becomes possible. An N type Si block is put into a vapor source 7 maintaning the temperature of a substrate at 300 deg.C and a high frequency wave is applied to the coil to discharge, thereby performing an ion plating. Approximately several hundred volts of a negative voltage is applied to the holder 9, whereby the velocity and the transporting amount of formed ions to the substrate are controlled accurately. By this method, the occurrence of the defect on the thin film surface can be prevented using a lower gas pressure. Further, a poor photoconductivity of the amorphous silicon film can be improved. Furthermore, a close contact with the substrate, the uniformity of the film and the growth velocity of the film can be increased.
JP117580A 1980-01-09 1980-01-09 Method of preparing thin film of amorphous silicon Pending JPS5698819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP117580A JPS5698819A (en) 1980-01-09 1980-01-09 Method of preparing thin film of amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP117580A JPS5698819A (en) 1980-01-09 1980-01-09 Method of preparing thin film of amorphous silicon

Publications (1)

Publication Number Publication Date
JPS5698819A true JPS5698819A (en) 1981-08-08

Family

ID=11494093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP117580A Pending JPS5698819A (en) 1980-01-09 1980-01-09 Method of preparing thin film of amorphous silicon

Country Status (1)

Country Link
JP (1) JPS5698819A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104916A2 (en) * 1982-09-29 1984-04-04 National Research Development Corporation Depositing a film onto a substrate including electron-beam evaporation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104916A2 (en) * 1982-09-29 1984-04-04 National Research Development Corporation Depositing a film onto a substrate including electron-beam evaporation
US4698235A (en) * 1982-09-29 1987-10-06 National Research Development Corporation Siting a film onto a substrate including electron-beam evaporation

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