DE3368348D1 - Semiconductor device and method of manufacturing same - Google Patents
Semiconductor device and method of manufacturing sameInfo
- Publication number
- DE3368348D1 DE3368348D1 DE8383201005T DE3368348T DE3368348D1 DE 3368348 D1 DE3368348 D1 DE 3368348D1 DE 8383201005 T DE8383201005 T DE 8383201005T DE 3368348 T DE3368348 T DE 3368348T DE 3368348 D1 DE3368348 D1 DE 3368348D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- manufacturing same
- manufacturing
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8202777A NL8202777A (nl) | 1982-07-09 | 1982-07-09 | Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3368348D1 true DE3368348D1 (en) | 1987-01-22 |
Family
ID=19840002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383201005T Expired DE3368348D1 (en) | 1982-07-09 | 1983-07-06 | Semiconductor device and method of manufacturing same |
Country Status (6)
Country | Link |
---|---|
US (2) | US4763185A (de) |
EP (1) | EP0099603B1 (de) |
JP (1) | JPS5922364A (de) |
CA (1) | CA1194193A (de) |
DE (1) | DE3368348D1 (de) |
NL (1) | NL8202777A (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
FR2583573B1 (fr) * | 1985-06-18 | 1988-04-08 | Thomson Csf | Procede de realisation d'un dispositif semi-conducteur a plusieurs niveaux de grille. |
NL8502478A (nl) * | 1985-09-11 | 1987-04-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
JPH0620110B2 (ja) * | 1985-10-07 | 1994-03-16 | 日本電気株式会社 | 半導体装置 |
US5915199A (en) * | 1998-06-04 | 1999-06-22 | Sharp Microelectronics Technology, Inc. | Method for manufacturing a CMOS self-aligned strapped interconnection |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691627A (en) * | 1970-02-03 | 1972-09-19 | Gen Electric | Method of fabricating buried metallic film devices |
US3837907A (en) * | 1972-03-22 | 1974-09-24 | Bell Telephone Labor Inc | Multiple-level metallization for integrated circuits |
GB1444047A (en) * | 1973-02-28 | 1976-07-28 | Hitachi Ltd | Charge transfer semiconductor devices and methods of fabricating such devices |
JPS5451383A (en) * | 1977-09-30 | 1979-04-23 | Oki Electric Ind Co Ltd | Production of semiconductor element |
JPS54122977A (en) * | 1978-03-16 | 1979-09-22 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
US4234362A (en) * | 1978-11-03 | 1980-11-18 | International Business Machines Corporation | Method for forming an insulator between layers of conductive material |
US4466172A (en) * | 1979-01-08 | 1984-08-21 | American Microsystems, Inc. | Method for fabricating MOS device with self-aligned contacts |
DE2939456A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden |
US4625391A (en) * | 1981-06-23 | 1986-12-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JPS6033A (ja) * | 1983-06-15 | 1985-01-05 | 松下電工株式会社 | ブレ−カ |
JP3891684B2 (ja) * | 1997-04-15 | 2007-03-14 | 株式会社日本吸収体技術研究所 | パンツ型使いすておむつ |
JPH11752A (ja) * | 1997-06-10 | 1999-01-06 | Ueda Shokai Kk | 球形インゴット及び該インゴットの炉への投入装置 |
JPH116628A (ja) * | 1997-06-17 | 1999-01-12 | Sanden Corp | 暖房給湯機の制御装置 |
-
1982
- 1982-07-09 NL NL8202777A patent/NL8202777A/nl not_active Application Discontinuation
-
1983
- 1983-06-24 US US06/507,409 patent/US4763185A/en not_active Expired - Fee Related
- 1983-06-30 CA CA000431570A patent/CA1194193A/en not_active Expired
- 1983-07-06 JP JP58121747A patent/JPS5922364A/ja active Pending
- 1983-07-06 EP EP83201005A patent/EP0099603B1/de not_active Expired
- 1983-07-06 DE DE8383201005T patent/DE3368348D1/de not_active Expired
-
1988
- 1988-03-31 US US07/173,003 patent/US4877754A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0099603A1 (de) | 1984-02-01 |
US4877754A (en) | 1989-10-31 |
JPS5922364A (ja) | 1984-02-04 |
US4763185A (en) | 1988-08-09 |
CA1194193A (en) | 1985-09-24 |
NL8202777A (nl) | 1984-02-01 |
EP0099603B1 (de) | 1986-12-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |