DE3366280D1 - Reduced capacitance electrode assembly - Google Patents

Reduced capacitance electrode assembly

Info

Publication number
DE3366280D1
DE3366280D1 DE8383303994T DE3366280T DE3366280D1 DE 3366280 D1 DE3366280 D1 DE 3366280D1 DE 8383303994 T DE8383303994 T DE 8383303994T DE 3366280 T DE3366280 T DE 3366280T DE 3366280 D1 DE3366280 D1 DE 3366280D1
Authority
DE
Germany
Prior art keywords
electrode
alternating current
substrate
reduced capacitance
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383303994T
Other languages
German (de)
English (en)
Inventor
Vincent David Cannella
Prem Nath
Robert Joseph Shuman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3366280D1 publication Critical patent/DE3366280D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE8383303994T 1982-07-30 1983-07-08 Reduced capacitance electrode assembly Expired DE3366280D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/403,417 US4461239A (en) 1982-07-30 1982-07-30 Reduced capacitance electrode assembly

Publications (1)

Publication Number Publication Date
DE3366280D1 true DE3366280D1 (en) 1986-10-23

Family

ID=23595681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383303994T Expired DE3366280D1 (en) 1982-07-30 1983-07-08 Reduced capacitance electrode assembly

Country Status (7)

Country Link
US (1) US4461239A (enExample)
EP (1) EP0100611B1 (enExample)
JP (1) JPS5963775A (enExample)
AT (1) ATE22384T1 (enExample)
AU (1) AU555247B2 (enExample)
CA (1) CA1188399A (enExample)
DE (1) DE3366280D1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
US4623441A (en) * 1984-08-15 1986-11-18 Advanced Plasma Systems Inc. Paired electrodes for plasma chambers
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
US5199778A (en) * 1990-01-19 1993-04-06 Matsushita Refrigeration Company Shelf apparatus for a refrigerator
US5382911A (en) * 1993-03-29 1995-01-17 International Business Machines Corporation Reaction chamber interelectrode gap monitoring by capacitance measurement
US5789040A (en) * 1997-05-21 1998-08-04 Optical Coating Laboratory, Inc. Methods and apparatus for simultaneous multi-sided coating of optical thin film designs using dual-frequency plasma-enhanced chemical vapor deposition
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
EP2762609B1 (en) * 2013-01-31 2019-04-17 Applied Materials, Inc. Apparatus and method for depositing at least two layers on a substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598710A (en) * 1966-04-04 1971-08-10 Ibm Etching method
FR2408972A1 (fr) * 1977-11-15 1979-06-08 Thomson Csf Source de plasma a flux eleve, et notamment accelerateur de particules comportant un telle source
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5849094B2 (ja) * 1978-06-06 1983-11-01 日本真空技術株式会社 真空雰囲気内で作動する回転電極への高周波大電力の供給装置
JPS5640661U (enExample) * 1979-09-07 1981-04-15
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
JPS56152973A (en) * 1980-04-30 1981-11-26 Tokuda Seisakusho Ltd Sputter etching device
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield

Also Published As

Publication number Publication date
EP0100611B1 (en) 1986-09-17
CA1188399A (en) 1985-06-04
AU555247B2 (en) 1986-09-18
ATE22384T1 (de) 1986-10-15
US4461239A (en) 1984-07-24
AU1723783A (en) 1984-02-02
JPH0510818B2 (enExample) 1993-02-10
EP0100611A1 (en) 1984-02-15
JPS5963775A (ja) 1984-04-11

Similar Documents

Publication Publication Date Title
KR860000703A (ko) 글로우 방전분해에 의해 기재상에 필름을 퇴적시키기 위한 장치 및 그 방법
AU555247B2 (en) Reduced capacitance electrode assembly
EP0144055A3 (en) Process and apparatus for producing a continuous insulated metallic substrate
ES8705706A1 (es) Un modulo fotovoltaico
GB2041985B (en) Forming electrical contact on photovoltaic cell by spraying
AU5111085A (en) Electrostatic spraying
JPS5633839A (en) Plasma treatment and device therefor
DE3071978D1 (en) Electrically conductive contact or metallizing structure for semiconductor substrates
EP0204356A3 (en) Process for the reactive deposition, activated by glow discharge, of an electrical conductor material from a gas phase
GB1469944A (en) Planar capacitor
ES8502242A1 (es) Dispositivo de alimentacion de un receptor electrico en posicion variable sobre una superficie
US4207540A (en) Gas laser system
KR850003062A (ko) 글로우 방전에 의한 반도체층 퇴적 방법
ATE30289T1 (de) Kapazitiver hochfrequenz-durchlaufofen.
ES473951A1 (es) Procedimiento de fabricacion de un condensador electrico
JPS618914A (ja) グロ−放電型成膜装置
JPS5559727A (en) Plasma deposition device
JPS5745339A (en) Production of deposited film
SU1576348A1 (ru) Устройство дл обработки поверхности полимерных материалов электрическим разр дом
JPS6482608A (en) Method of manufacture of a plurality of beam lead capacitors and capacitors manufactured by the method
JPS5713776A (en) Photovoltaic device
JPS61116826A (ja) 薄膜形成方法
FR2432203A1 (fr) Condensateur de puissance a autoregeneration
GB1066461A (en) Improvements in capacitors
JPS57204602A (en) Dielectric filter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee