DE3364873D1 - Process for manufacturing boron-doped gallium arsenide single crystal - Google Patents
Process for manufacturing boron-doped gallium arsenide single crystalInfo
- Publication number
- DE3364873D1 DE3364873D1 DE8383302165T DE3364873T DE3364873D1 DE 3364873 D1 DE3364873 D1 DE 3364873D1 DE 8383302165 T DE8383302165 T DE 8383302165T DE 3364873 T DE3364873 T DE 3364873T DE 3364873 D1 DE3364873 D1 DE 3364873D1
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- gallium arsenide
- doped gallium
- arsenide single
- manufacturing boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57064508A JPS58181799A (ja) | 1982-04-16 | 1982-04-16 | 硼素を添加したGaAs単結晶の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3364873D1 true DE3364873D1 (en) | 1986-09-04 |
Family
ID=13260205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383302165T Expired DE3364873D1 (en) | 1982-04-16 | 1983-04-18 | Process for manufacturing boron-doped gallium arsenide single crystal |
Country Status (5)
Country | Link |
---|---|
US (1) | US4528061A (ja) |
EP (1) | EP0092409B1 (ja) |
JP (1) | JPS58181799A (ja) |
CA (1) | CA1212599A (ja) |
DE (1) | DE3364873D1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232995A (ja) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | 引上単結晶の冷却方法 |
CA1214381A (en) * | 1983-07-20 | 1986-11-25 | Roelof P. Bult | Method of growing gallium arsenide crystals using boron oxide encapsulant |
US4585511A (en) * | 1983-07-22 | 1986-04-29 | Cominco Ltd. | Method of growing gallium arsenide crystals using boron oxide encapsulant |
US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
JP2529934B2 (ja) * | 1984-02-21 | 1996-09-04 | 住友電気工業株式会社 | 単結晶の製造方法 |
JPS61222911A (ja) * | 1985-03-28 | 1986-10-03 | Toshiba Corp | 燐化化合物の合成方法 |
JPS6270291A (ja) * | 1985-09-19 | 1987-03-31 | Toshiba Corp | GaAs単結晶の製造方法及び装置 |
US4721539A (en) * | 1986-07-15 | 1988-01-26 | The United States Of America As Represented By The United States Department Of Energy | Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
KR880009419A (ko) * | 1987-01-26 | 1988-09-15 | 이찌하라 시로 | 반도체소자의 제조방법 및 그 방법에 의해 제조된 반도체 소자 |
US4923561A (en) * | 1988-09-23 | 1990-05-08 | American Telephone And Telegraph Company | Crystal growth method |
US5186784A (en) * | 1989-06-20 | 1993-02-16 | Texas Instruments Incorporated | Process for improved doping of semiconductor crystals |
US5431125A (en) * | 1991-06-14 | 1995-07-11 | The United States Of America As Represented By The Secretary Of The Air Force | Twin-free crystal growth of III-V semiconductor material |
JP3015656B2 (ja) * | 1994-03-23 | 2000-03-06 | 株式会社東芝 | 半絶縁性GaAs単結晶の製造方法および製造装置 |
JP4135239B2 (ja) * | 1997-12-26 | 2008-08-20 | 住友電気工業株式会社 | 半導体結晶およびその製造方法ならびに製造装置 |
WO2006019098A1 (ja) * | 2004-08-20 | 2006-02-23 | Mitsubishi Chemical Corporation | 金属窒化物および金属窒化物の製造方法 |
JP2013026540A (ja) * | 2011-07-25 | 2013-02-04 | Renesas Electronics Corp | 半導体集積回路装置 |
CN104900758B (zh) * | 2015-05-25 | 2017-03-15 | 连云港市产品质量监督检验中心 | 一种准单晶硅片微缺陷的检测方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2133875A1 (de) * | 1971-07-07 | 1973-01-18 | Siemens Ag | Verfahren zum ziehen von einkristallen, insbesondere fuer keimkristalle |
JPS6028800B2 (ja) * | 1977-10-17 | 1985-07-06 | 住友電気工業株式会社 | 低欠陥密度りん化ガリウム単結晶 |
US4200621A (en) * | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
-
1982
- 1982-04-16 JP JP57064508A patent/JPS58181799A/ja active Granted
-
1983
- 1983-04-15 US US06/485,355 patent/US4528061A/en not_active Expired - Lifetime
- 1983-04-15 CA CA000425974A patent/CA1212599A/en not_active Expired
- 1983-04-18 DE DE8383302165T patent/DE3364873D1/de not_active Expired
- 1983-04-18 EP EP83302165A patent/EP0092409B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0092409A1 (en) | 1983-10-26 |
CA1212599A (en) | 1986-10-14 |
JPS6129919B2 (ja) | 1986-07-10 |
JPS58181799A (ja) | 1983-10-24 |
EP0092409B1 (en) | 1986-07-30 |
US4528061A (en) | 1985-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |