DE3324594A1 - Verfahren zur herstellung eines halbleiter-lasers - Google Patents
Verfahren zur herstellung eines halbleiter-lasersInfo
- Publication number
- DE3324594A1 DE3324594A1 DE19833324594 DE3324594A DE3324594A1 DE 3324594 A1 DE3324594 A1 DE 3324594A1 DE 19833324594 DE19833324594 DE 19833324594 DE 3324594 A DE3324594 A DE 3324594A DE 3324594 A1 DE3324594 A1 DE 3324594A1
- Authority
- DE
- Germany
- Prior art keywords
- groove
- etching
- semiconductor laser
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract 7
- 238000000034 method Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 19
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- 230000012010 growth Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 8
- 230000003698 anagen phase Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 244000052616 bacterial pathogen Species 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57119362A JPS599990A (ja) | 1982-07-07 | 1982-07-07 | 半導体レ−ザの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3324594A1 true DE3324594A1 (de) | 1984-01-26 |
DE3324594C2 DE3324594C2 (ja) | 1991-12-05 |
Family
ID=14759613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19833324594 Granted DE3324594A1 (de) | 1982-07-07 | 1983-07-07 | Verfahren zur herstellung eines halbleiter-lasers |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS599990A (ja) |
DE (1) | DE3324594A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294695A (ja) * | 1985-06-20 | 1986-12-25 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JP2547459B2 (ja) * | 1990-01-31 | 1996-10-23 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2626775A1 (de) * | 1975-06-23 | 1976-12-30 | Xerox Corp | Diodenlaser mit heterouebergang |
GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
US4321556A (en) * | 1979-01-18 | 1982-03-23 | Nippon Electric Co., Ltd. | Semiconductor laser |
DE3127618A1 (de) * | 1980-07-16 | 1982-05-06 | Sony Corp., Tokyo | "halbleiterlaser und verfahren zu seiner herstellung" |
-
1982
- 1982-07-07 JP JP57119362A patent/JPS599990A/ja active Pending
-
1983
- 1983-07-07 DE DE19833324594 patent/DE3324594A1/de active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2626775A1 (de) * | 1975-06-23 | 1976-12-30 | Xerox Corp | Diodenlaser mit heterouebergang |
GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
US4321556A (en) * | 1979-01-18 | 1982-03-23 | Nippon Electric Co., Ltd. | Semiconductor laser |
DE3127618A1 (de) * | 1980-07-16 | 1982-05-06 | Sony Corp., Tokyo | "halbleiterlaser und verfahren zu seiner herstellung" |
Non-Patent Citations (15)
Title |
---|
ADACHI, S., KAWAGUCHI, H.: Chemical etching characteristics of (001) InP. In:J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 128, 1981, Nr. 6, S. 1342-1349 * |
ARAI, S. u.a.: 1.6 ?m wavelength GaInAsP/InP BH lasers. In: IEEE Journal of Quantum Electronics, Vol. QE-17, 1981, Nr. 5, S. 640-645 |
ARAI, S. u.a.:1.6 mum wavelength GaInAsP/InP BH lasers. In: IEEE Journal of Quantum Electronics, Vol. QE-17, 1981, Nr. 5, S. 640-645 * |
FIGUEROA, L.,WANG, S.: Inverted-ridgewaveguide double-heterostructure injection laser with current and lateral optical confinement. In: Appl.Phys.Lett., Vol.31, 1977, Nr.1, S.45-47 |
HIRAO, M. u.a.: Fabrication and characterization of narrow stripe InGaAsP/InP buried hetero- structure lasers. In: Journal of Applied Physics, Vol. 51, 1980, Nr. 8, S. 4539-4540 * |
IMAI, H. et al.: V-grooved-substrate buried heterostructure InGaAsP/InP laser diodes. In: Fujitsu Sci. Tech. J.,Vol.18, 1982, Nr.4, S. 541-561 |
ISHIKAWA, H. u.a.: In: IEEE J. of Quantum Electronics, Vol. QE-18,1982, Nr.10, S.1704-1711, Veröff.: October 1982 |
ISHIKAWA, H. u.a.: V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxy. In: J.of Appl.Phys., Vol.53, 1982, Nr.4, S.2851-2853 |
ISHIKAWA,H. u.a.:V-grooved substrate buried heterostructure InGaAsP/InP laser. In: Electronics Letters, Vol. 17 1981, Nr. 13, S. 465-467 * |
MUROTANI, T. u.a.: InGaAsP/InP buried crescent laser emitting at 1.3 ?m with very low threshold current. In: Electronics Letters, Vol. 16, 1980, Nr.14, S.566-568 |
MUROTANI, T. u.a.: InGaAsP/InP buried crescent laser emitting at 1.3 mum with very low threshold current. In: Electronics Letters, Vol. 16, 1980, Nr.14, S.566-568 * |
OOMURA, E. u.a.:Low threshold InGaAsP/InP buried crescent laser with double current confinement structure. DOLLAR * |
OOMURA, E. u.a.:Low threshold InGaAsP/InP buried crescent laser with double current confinement structure. In:IEEE J. of Quantum Electronics, Vol. QE-17, 1981, Nr.5, S.646 -650 |
TSUKADA, T.: GaAs-Ga?1-x? Al?x? As buried-heterostructure injection lasers. In:J. of Appl.Phys., Vol. 45, 1974, Nr.11, S.4899-4906 |
YU, K.L. u.a.: A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction. In: IEEE J. of Quantum Electronics, Vol. QE-18, 1982, Nr.5,S.817-819 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0666625A1 (en) * | 1994-01-31 | 1995-08-09 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
US5566198A (en) * | 1994-01-31 | 1996-10-15 | Mitsubishi Chemical Corporation | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
US5920767A (en) * | 1994-01-31 | 1999-07-06 | Mitsubishi Chemical Company | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
Also Published As
Publication number | Publication date |
---|---|
JPS599990A (ja) | 1984-01-19 |
DE3324594C2 (ja) | 1991-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
8105 | Search report available | ||
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |