DE3300986C2 - - Google Patents
Info
- Publication number
- DE3300986C2 DE3300986C2 DE3300986A DE3300986A DE3300986C2 DE 3300986 C2 DE3300986 C2 DE 3300986C2 DE 3300986 A DE3300986 A DE 3300986A DE 3300986 A DE3300986 A DE 3300986A DE 3300986 C2 DE3300986 C2 DE 3300986C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- layers
- primary layer
- primary
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 85
- 239000004065 semiconductor Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
- H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/339,849 US4438447A (en) | 1982-01-18 | 1982-01-18 | Multilayered optical integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3300986A1 DE3300986A1 (de) | 1983-07-28 |
| DE3300986C2 true DE3300986C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-10-31 |
Family
ID=23330892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833300986 Granted DE3300986A1 (de) | 1982-01-18 | 1983-01-14 | Mehrschichtige optische integrierte schaltung |
Country Status (8)
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2132016B (en) * | 1982-12-07 | 1986-06-25 | Kokusai Denshin Denwa Co Ltd | A semiconductor device |
| US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
| US4771325A (en) * | 1985-02-11 | 1988-09-13 | American Telephone & Telegraph Co., At&T Bell Laboratories | Integrated photodetector-amplifier device |
| US4744616A (en) * | 1985-02-25 | 1988-05-17 | California Institute Of Technology | Monolithic electro-optic modulator array |
| JPH0728022B2 (ja) * | 1985-05-07 | 1995-03-29 | 株式会社日立製作所 | 光信号伝達系を備えた電子デバイス |
| FR2592739B1 (fr) * | 1986-01-06 | 1988-03-18 | Brillouet Francois | Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication |
| DE3726235A1 (de) * | 1987-08-06 | 1989-02-16 | Siemens Ag | Monolithisch integrierte wellenleiter-fotodioden-fet-kombination |
| US4775876A (en) * | 1987-09-08 | 1988-10-04 | Motorola Inc. | Photon recycling light emitting diode |
| US5064684A (en) * | 1989-08-02 | 1991-11-12 | Eastman Kodak Company | Waveguides, interferometers, and methods of their formation |
| US5023944A (en) * | 1989-09-05 | 1991-06-11 | General Dynamics Corp./Electronics Division | Optical resonator structures |
| US5029297A (en) * | 1989-10-13 | 1991-07-02 | At&T Bell Laboratories | Optical amplifier-photodetector device |
| US4997246A (en) * | 1989-12-21 | 1991-03-05 | International Business Machines Corporation | Silicon-based rib waveguide optical modulator |
| US5391896A (en) * | 1992-09-02 | 1995-02-21 | Midwest Research Institute | Monolithic multi-color light emission/detection device |
| GB9509499D0 (en) * | 1995-05-10 | 1995-07-05 | Ultra Silicon Techn Uk Ltd | Optical read and write systems |
| US5640474A (en) * | 1995-09-29 | 1997-06-17 | The United States Of America As Represented By The Secretary Of The Army | Easily manufacturable optical self-imaging waveguide |
| JPH1022520A (ja) * | 1996-06-28 | 1998-01-23 | Nec Corp | 半導体受光素子及びその製造方法 |
| EP0889529A1 (en) * | 1997-07-01 | 1999-01-07 | Nec Corporation | Semiconductor light-receiving device and method of fabricating the same |
| US6437891B1 (en) * | 1998-10-27 | 2002-08-20 | Agere Systems Guardian Corp. | Integrated dual-wavelength transceiver |
| US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
| DE60206132T2 (de) * | 2002-01-31 | 2006-06-22 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren und Einrichtung zur hervorragenden galvanischen Isolierung zwischen zwei Niederspannungsschaltungen in einer intergrierten Opto-Isolator-Einrichtung |
| US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
| US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
| US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
| US7378681B2 (en) * | 2002-08-12 | 2008-05-27 | Agility Communications, Inc. | Ridge waveguide device surface passivation by epitaxial regrowth |
| US7529435B2 (en) * | 2003-05-29 | 2009-05-05 | Applied Materials, Inc. | Serial routing of optical signals |
| EP1649566A4 (en) * | 2003-06-27 | 2007-08-15 | Applied Materials Inc | PULSE QUANTUM DOT LASER SYSTEM WITH LOW JITTER |
| US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
| US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
| US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
| WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
| US7835408B2 (en) * | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
| US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
| WO2007065614A2 (en) * | 2005-12-07 | 2007-06-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
| JP4840062B2 (ja) * | 2006-10-06 | 2011-12-21 | ソニー株式会社 | 半導体装置および光検出方法 |
| US8290325B2 (en) * | 2008-06-30 | 2012-10-16 | Intel Corporation | Waveguide photodetector device and manufacturing method thereof |
| WO2010065731A2 (en) * | 2008-12-03 | 2010-06-10 | Innolume Gmbh | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3465159A (en) | 1966-06-27 | 1969-09-02 | Us Army | Light amplifying device |
| DE2422330A1 (de) * | 1974-05-08 | 1975-11-13 | Siemens Ag | Optoelektronisches halbleiter-koppelelement |
| US3993963A (en) | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
| US3978426A (en) | 1975-03-11 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterostructure devices including tapered optical couplers |
| FR2328293A1 (fr) * | 1975-10-17 | 1977-05-13 | Radiotechnique Compelec | Dispositif semi-conducteur de couplage optoelectronique |
| US4136928A (en) | 1977-05-06 | 1979-01-30 | Bell Telephone Laboratories, Incorporated | Optical integrated circuit including junction laser with oblique mirror |
| US4152044A (en) | 1977-06-17 | 1979-05-01 | International Telephone And Telegraph Corporation | Galium aluminum arsenide graded index waveguide |
| EP0067566A3 (en) * | 1981-06-13 | 1985-08-07 | Plessey Overseas Limited | Integrated light detection or generation means and amplifying means |
-
1982
- 1982-01-18 US US06/339,849 patent/US4438447A/en not_active Expired - Lifetime
-
1983
- 1983-01-04 SE SE8300038A patent/SE8300038L/xx not_active Application Discontinuation
- 1983-01-12 CA CA000419357A patent/CA1182549A/en not_active Expired
- 1983-01-13 GB GB08300901A patent/GB2113912B/en not_active Expired
- 1983-01-13 FR FR8300432A patent/FR2520158B1/fr not_active Expired
- 1983-01-14 DE DE19833300986 patent/DE3300986A1/de active Granted
- 1983-01-18 JP JP58005415A patent/JPS58180056A/ja active Granted
-
1986
- 1986-10-23 HK HK802/86A patent/HK80286A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2520158A1 (fr) | 1983-07-22 |
| JPS58180056A (ja) | 1983-10-21 |
| HK80286A (en) | 1986-10-31 |
| FR2520158B1 (fr) | 1986-03-21 |
| GB2113912A (en) | 1983-08-10 |
| DE3300986A1 (de) | 1983-07-28 |
| JPS6329418B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-06-14 |
| SE8300038L (sv) | 1983-07-19 |
| CA1182549A (en) | 1985-02-12 |
| SE8300038D0 (sv) | 1983-01-04 |
| US4438447A (en) | 1984-03-20 |
| GB2113912B (en) | 1986-03-26 |
| GB8300901D0 (en) | 1983-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3300986C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE19913355B4 (de) | Integrierte opto-elektronische Schaltung mit ZnO-Schicht als Lichtwellenleiter | |
| EP0187198B1 (de) | Verfahren zur Herstellung einer integriert - optischen Anordnung | |
| DE69315359T2 (de) | Elektro-optische vorrichtung | |
| DE69323253T2 (de) | Optische integrierte Schaltung mit Lichtdetektor | |
| DE2165006C3 (de) | Halbleiterlaser | |
| DE69429406T2 (de) | Verfahren zum Herstellen einer monolitisch integrierten Struktur mit optoelektronischen Komponenten und so hergestellte Strukturen | |
| DE112013003119B4 (de) | P-N-Diodenmodulator mit verschachtelter Doppelschicht | |
| DE69500609T2 (de) | Lichtempfangsvorrichtung | |
| DE19700520A1 (de) | Halbleiter-Fotodetektorvorrichtung | |
| DE19752193A1 (de) | Photodetektor | |
| DE4404459A1 (de) | Optischer Schalter und Verfahren zum Herstellen des optischen Schalters | |
| DE3637817C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3711617A1 (de) | Monolithisch integrierte wellenleiter-fotodioden-fet-kombination | |
| DE19711506A1 (de) | Halbleitervorrichtung | |
| DE69217318T2 (de) | Optoelektronische Halbleiteranordnung mit einem Strahlungsleiter und Verfahren zum Herstellen einer derartigen Anordnung | |
| DE60201256T2 (de) | Elektrooptischer wanderwellenmodulator | |
| DE2556850C2 (de) | Heteroübergangs-Diodenlaser | |
| EP1055141B1 (de) | Optische struktur und verfahren zu deren herstellung | |
| DE3789687T2 (de) | Integrierte Halbleitervorrichtung in Form einer Kopplungsanordnung zwischen einem Fotodetektor und einem Lichtwellenleiter. | |
| EP0303825B1 (de) | Lichtmodulator | |
| DE69123709T2 (de) | Optoelektronische integrierte Schaltung mit einem Langwellensender | |
| DE19607894C2 (de) | Halbleiterlaser und Verfahren zu dessen Herstellung | |
| EP0272384B1 (de) | Monolithisch integrierter Photoempfänger | |
| DE60204702T2 (de) | Verbesserungen für optische vorrichtungen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
| 8339 | Ceased/non-payment of the annual fee |