DE3280050D1 - Verfahren zum beschichten von halbleiterscheiben und vorrichtung dafuer. - Google Patents
Verfahren zum beschichten von halbleiterscheiben und vorrichtung dafuer.Info
- Publication number
- DE3280050D1 DE3280050D1 DE8585114268T DE3280050T DE3280050D1 DE 3280050 D1 DE3280050 D1 DE 3280050D1 DE 8585114268 T DE8585114268 T DE 8585114268T DE 3280050 T DE3280050 T DE 3280050T DE 3280050 D1 DE3280050 D1 DE 3280050D1
- Authority
- DE
- Germany
- Prior art keywords
- device therefor
- semiconductor disc
- coating semiconductor
- coating
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000368517A CA1158109A (en) | 1981-01-14 | 1981-01-14 | Coating of semiconductor wafers and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3280050D1 true DE3280050D1 (de) | 1990-01-11 |
Family
ID=4118924
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585114268T Expired - Fee Related DE3280050D1 (de) | 1981-01-14 | 1982-01-11 | Verfahren zum beschichten von halbleiterscheiben und vorrichtung dafuer. |
DE8282300126T Expired DE3276557D1 (en) | 1981-01-14 | 1982-01-11 | Coating of semiconductor wafers and apparatus therefor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282300126T Expired DE3276557D1 (en) | 1981-01-14 | 1982-01-11 | Coating of semiconductor wafers and apparatus therefor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4466381A (de) |
EP (1) | EP0056326B1 (de) |
JP (1) | JPS57138142A (de) |
CA (1) | CA1158109A (de) |
DE (2) | DE3280050D1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4819579A (en) * | 1981-01-14 | 1989-04-11 | Northern Telecom Limited | Coating of semiconductor wafers and apparatus therefor |
US4696833A (en) * | 1982-08-27 | 1987-09-29 | Hewlett-Packard Company | Method for applying a uniform coating to integrated circuit wafers by means of chemical deposition |
EP0140791A1 (de) * | 1983-10-28 | 1985-05-08 | B T U Engineering Corporation | Vorrichtung zum Erzeugen dünner CVD-Schichten gleichmässiger Dicke auf Halbleitersubstraten |
US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
NL8401233A (nl) * | 1984-04-17 | 1985-11-18 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen waarbij materiaal uit een reaktiegas wordt afgescheiden en een inrichting voor het uitvoeren van een dergelijke werkwijze. |
US4641604A (en) * | 1984-05-04 | 1987-02-10 | Anicon, Inc. | Chemical vapor deposition wafer boat |
US4582020A (en) * | 1984-05-04 | 1986-04-15 | Anicon, Inc. | Chemical vapor deposition wafer boat |
US4694778A (en) * | 1984-05-04 | 1987-09-22 | Anicon, Inc. | Chemical vapor deposition wafer boat |
US4548159A (en) * | 1984-07-06 | 1985-10-22 | Anicon, Inc. | Chemical vapor deposition wafer boat |
CA1259883A (en) * | 1984-11-30 | 1989-09-26 | Process Technology (1988) Limited | Gas supply device, particularly for manufacturing semiconductor elements |
US4728246A (en) * | 1986-05-16 | 1988-03-01 | Thermco Systems, Inc. | Wafer boat transfer tool |
US4841906A (en) * | 1986-11-12 | 1989-06-27 | Heraeus Amersil, Inc. | Mass transferable semiconductor substrate processing and handling full shell carrier (boat) |
DE3829159A1 (de) * | 1988-08-27 | 1990-03-08 | Westdeutsche Quarzschmelze Gmb | Vorrichtung zur aufnahme von halbleiterscheibchen |
US4922277A (en) * | 1988-11-28 | 1990-05-01 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon wafer photoresist developer |
US5050534A (en) * | 1989-08-03 | 1991-09-24 | Cryco Twenty-Two, Inc. | Mobile injector system |
US5417767A (en) * | 1993-12-28 | 1995-05-23 | Stinson; Mark G. | Wafer carrier |
JP3554297B2 (ja) * | 2001-07-26 | 2004-08-18 | 株式会社エフティーエル | 半導体基板熱処理装置及び半導体素子の製造方法 |
US20130068161A1 (en) * | 2011-09-15 | 2013-03-21 | Applied Materials, Inc. | Gas delivery and distribution for uniform process in linear-type large-area plasma reactor |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4810194U (de) * | 1971-06-16 | 1973-02-03 | ||
US3918756A (en) * | 1973-12-26 | 1975-11-11 | Fluoroware Inc | Wafer holder |
US3977926A (en) * | 1974-12-20 | 1976-08-31 | Western Electric Company, Inc. | Methods for treating articles |
JPS5245874A (en) * | 1975-10-09 | 1977-04-11 | Nippon Denso Co Ltd | Transfer device of semiconductor substrate holding device |
US4108106A (en) * | 1975-12-29 | 1978-08-22 | Tylan Corporation | Cross-flow reactor |
JPS5285476A (en) * | 1976-01-09 | 1977-07-15 | Hitachi Ltd | Semiconductor wafer accommodating jig |
JPS52139379A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Impurity supporting jig |
US4098923A (en) * | 1976-06-07 | 1978-07-04 | Motorola, Inc. | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat |
JPS5352368A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Quartz tube for furnace |
JPS6036103B2 (ja) * | 1977-10-14 | 1985-08-19 | 株式会社日立製作所 | 物品処理装置 |
US4220116A (en) * | 1978-10-30 | 1980-09-02 | Burroughs Corporation | Reactant gas flow structure for a low pressure chemical vapor deposition system |
US4203387A (en) * | 1978-12-28 | 1980-05-20 | General Signal Corporation | Cage for low pressure silicon dioxide deposition reactors |
JPS5599719A (en) * | 1979-01-26 | 1980-07-30 | Hitachi Ltd | Heat treatment jig of wafer |
JPS5951629B2 (ja) * | 1979-06-15 | 1984-12-14 | 帝人株式会社 | スパンライク織編物の処理法 |
US4256053A (en) * | 1979-08-17 | 1981-03-17 | Dozier Alfred R | Chemical vapor reaction system |
US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
-
1981
- 1981-01-14 CA CA000368517A patent/CA1158109A/en not_active Expired
-
1982
- 1982-01-11 DE DE8585114268T patent/DE3280050D1/de not_active Expired - Fee Related
- 1982-01-11 EP EP82300126A patent/EP0056326B1/de not_active Expired
- 1982-01-11 JP JP57001872A patent/JPS57138142A/ja active Pending
- 1982-01-11 DE DE8282300126T patent/DE3276557D1/de not_active Expired
-
1983
- 1983-06-28 US US06/508,411 patent/US4466381A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3276557D1 (en) | 1987-07-16 |
EP0056326B1 (de) | 1987-06-10 |
JPS57138142A (en) | 1982-08-26 |
EP0056326A2 (de) | 1982-07-21 |
US4466381A (en) | 1984-08-21 |
EP0056326A3 (en) | 1983-07-20 |
CA1158109A (en) | 1983-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |