DE3279659D1 - Protection against erroneous signal generation in semiconductor devices - Google Patents

Protection against erroneous signal generation in semiconductor devices

Info

Publication number
DE3279659D1
DE3279659D1 DE8282306038T DE3279659T DE3279659D1 DE 3279659 D1 DE3279659 D1 DE 3279659D1 DE 8282306038 T DE8282306038 T DE 8282306038T DE 3279659 T DE3279659 T DE 3279659T DE 3279659 D1 DE3279659 D1 DE 3279659D1
Authority
DE
Germany
Prior art keywords
signal generation
semiconductor devices
protection against
erroneous signal
against erroneous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282306038T
Other languages
English (en)
Inventor
Tomio Nakano
Masao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3279659D1 publication Critical patent/DE3279659D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8282306038T 1981-11-13 1982-11-12 Protection against erroneous signal generation in semiconductor devices Expired DE3279659D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56182114A JPS5884455A (ja) 1981-11-13 1981-11-13 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3279659D1 true DE3279659D1 (en) 1989-06-01

Family

ID=16112572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282306038T Expired DE3279659D1 (en) 1981-11-13 1982-11-12 Protection against erroneous signal generation in semiconductor devices

Country Status (3)

Country Link
EP (1) EP0079775B1 (de)
JP (1) JPS5884455A (de)
DE (1) DE3279659D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198753A (ja) * 1983-12-13 1985-10-08 フェアチャイルド　セミコンダクタ　コーポレーション 超ｌｓｉ集積回路における信号伝播損失を減少させる方法及び装置
US4833521A (en) * 1983-12-13 1989-05-23 Fairchild Camera & Instrument Corp. Means for reducing signal propagation losses in very large scale integrated circuits
FR2565031B1 (fr) * 1984-05-25 1986-09-05 Labo Electronique Physique Procede de realisation d'un blindage entre deux sous-ensembles d'un microcircuit et application de ce procede a la realisation d'un circuit integre monolithique comprenant deux sous-ensembles ainsi isoles
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
FR2726941A1 (fr) * 1986-01-28 1996-05-15 Cimsa Cintra Dispositif integre de protection par varistance d'un composant electronique contre les effets d'un champ electro-magnetique ou de charges statiques
DE3706251A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
JPS6344759A (ja) * 1986-08-12 1988-02-25 Canon Inc 光電変換装置
DE3641299A1 (de) * 1986-12-03 1988-06-16 Philips Patentverwaltung Integrierte halbleiter-schaltung mit mehrlagenverdrahtung
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置
US6069393A (en) * 1987-06-26 2000-05-30 Canon Kabushiki Kaisha Photoelectric converter
CN1031447A (zh) * 1987-07-10 1989-03-01 菲利浦光灯制造公司 电荷耦合器件
JP3390875B2 (ja) * 1992-11-12 2003-03-31 日本テキサス・インスツルメンツ株式会社 半導体装置
US6166403A (en) * 1997-11-12 2000-12-26 Lsi Logic Corporation Integrated circuit having embedded memory with electromagnetic shield
AT502716B1 (de) * 2005-11-09 2007-10-15 Robert Swoboda Struktur und schaltung zur vermeidung des einflusses der parasitären kapazitiven substrat- kopplung von integrierten widerständen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1471729A (fr) * 1965-03-19 1967-03-03 Rca Corp Dispositif semi-conducteur
US3602782A (en) * 1969-12-05 1971-08-31 Thomas Klein Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3990102A (en) * 1974-06-28 1976-11-02 Hitachi, Ltd. Semiconductor integrated circuits and method of manufacturing the same
DE2522984C2 (de) * 1975-05-23 1983-06-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektronischer Koppelpunktbaustein

Also Published As

Publication number Publication date
EP0079775B1 (de) 1989-04-26
JPS5884455A (ja) 1983-05-20
EP0079775A2 (de) 1983-05-25
EP0079775A3 (en) 1985-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee