DE3279432D1 - Semiconductor signal conversion device using photon coupling - Google Patents
Semiconductor signal conversion device using photon couplingInfo
- Publication number
- DE3279432D1 DE3279432D1 DE8282110828T DE3279432T DE3279432D1 DE 3279432 D1 DE3279432 D1 DE 3279432D1 DE 8282110828 T DE8282110828 T DE 8282110828T DE 3279432 T DE3279432 T DE 3279432T DE 3279432 D1 DE3279432 D1 DE 3279432D1
- Authority
- DE
- Germany
- Prior art keywords
- conversion device
- signal conversion
- semiconductor signal
- photon coupling
- photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/341,955 US4477721A (en) | 1982-01-22 | 1982-01-22 | Electro-optic signal conversion |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3279432D1 true DE3279432D1 (en) | 1989-03-09 |
Family
ID=23339715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282110828T Expired DE3279432D1 (en) | 1982-01-22 | 1982-11-23 | Semiconductor signal conversion device using photon coupling |
Country Status (4)
Country | Link |
---|---|
US (1) | US4477721A (de) |
EP (1) | EP0084621B1 (de) |
JP (1) | JPS58130580A (de) |
DE (1) | DE3279432D1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3633181C2 (de) * | 1986-09-30 | 1998-12-10 | Siemens Ag | Reflexlichtschranke |
FR2631132B1 (fr) * | 1988-05-03 | 1991-09-20 | Thomson Csf | Detecteur d'images radiologiques |
US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
US5055894A (en) * | 1988-09-29 | 1991-10-08 | The Boeing Company | Monolithic interleaved LED/PIN photodetector array |
JP2831730B2 (ja) * | 1989-09-29 | 1998-12-02 | 株式会社東芝 | 密着型イメージセンサ |
JPH0715030A (ja) * | 1993-06-07 | 1995-01-17 | Motorola Inc | 線形集積光結合素子およびその製造方法 |
EP0645826A3 (de) * | 1993-09-23 | 1995-05-17 | Siemens Comp Inc | Monolithischer Optokoppler mit mehreren Kanälen. |
DE69421884T2 (de) * | 1993-09-30 | 2000-05-11 | Siemens Comp Inc | Linearer bidirektionaler Optokoppler |
US5549762A (en) * | 1995-01-13 | 1996-08-27 | International Rectifier Corporation | Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers |
EP1435255B1 (de) | 1995-06-06 | 2006-05-17 | Optobionics Corporation | Anordnung zur Reizung der Retina mittels adaptierender Bilderzeugung |
US5903016A (en) * | 1995-06-30 | 1999-05-11 | Siemens Components, Inc. | Monolithic linear optocoupler |
WO1999027589A1 (en) * | 1997-11-26 | 1999-06-03 | Chow Alan Y | Optoelectric voltage-phase switch using photodiodes |
US5837995A (en) * | 1996-11-25 | 1998-11-17 | Alan Y. Chow | Wavelength-controllable voltage-phase photodiode optoelectronic switch ("opsistor") |
US5828074A (en) * | 1997-05-19 | 1998-10-27 | Mini-Systems, Inc. | Optoisolator comprising walls having photosensitive inner surfaces |
DE10011258A1 (de) * | 2000-03-08 | 2001-09-20 | Rossendorf Forschzent | Integrierter Optokoppler und Verfahren zu seiner Herstellung |
US6389317B1 (en) | 2000-03-31 | 2002-05-14 | Optobionics Corporation | Multi-phasic microphotodetector retinal implant with variable voltage and current capability |
US6427087B1 (en) | 2000-05-04 | 2002-07-30 | Optobionics Corporation | Artificial retina device with stimulating and ground return electrodes disposed on opposite sides of the neuroretina and method of attachment |
JP2002057352A (ja) * | 2000-06-02 | 2002-02-22 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
US6574022B2 (en) | 2001-03-19 | 2003-06-03 | Alan Y. Chow | Integral differential optical signal receiver |
US7037943B2 (en) | 2001-04-10 | 2006-05-02 | Optobionics Corporation | Retinal treatment method |
US7031776B2 (en) | 2001-06-29 | 2006-04-18 | Optobionics | Methods for improving damaged retinal cell function |
US20050033202A1 (en) | 2001-06-29 | 2005-02-10 | Chow Alan Y. | Mechanically activated objects for treatment of degenerative retinal disease |
US6853046B2 (en) * | 2002-09-24 | 2005-02-08 | Hamamatsu Photonics, K.K. | Photodiode array and method of making the same |
US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
US20060255349A1 (en) * | 2004-05-11 | 2006-11-16 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
GB0519599D0 (en) * | 2005-09-26 | 2005-11-02 | Imp College Innovations Ltd | Photovoltaic cells |
US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
US20080216885A1 (en) * | 2007-03-06 | 2008-09-11 | Sergey Frolov | Spectrally adaptive multijunction photovoltaic thin film device and method of producing same |
US20090215215A1 (en) * | 2008-02-21 | 2009-08-27 | Sunlight Photonics Inc. | Method and apparatus for manufacturing multi-layered electro-optic devices |
US20090211622A1 (en) * | 2008-02-21 | 2009-08-27 | Sunlight Photonics Inc. | Multi-layered electro-optic devices |
US10211353B2 (en) * | 2008-04-14 | 2019-02-19 | Sunlight Photonics Inc. | Aligned bifacial solar modules |
US8835748B2 (en) | 2009-01-06 | 2014-09-16 | Sunlight Photonics Inc. | Multi-junction PV module |
US8405115B2 (en) * | 2009-01-28 | 2013-03-26 | Maxim Integrated Products, Inc. | Light sensor using wafer-level packaging |
JP2013098327A (ja) * | 2011-10-31 | 2013-05-20 | Kyocera Corp | 集積型半導体装置 |
US8941126B2 (en) * | 2011-11-10 | 2015-01-27 | Lei Guo | Semiconductor electricity converter |
CN103456828A (zh) * | 2011-11-10 | 2013-12-18 | 郭磊 | 一种半导体光电电能转换器 |
EP2748862A4 (de) * | 2011-11-10 | 2015-05-27 | Guo Lei | Halbleiter-dc-wandler |
JP6366914B2 (ja) * | 2013-09-24 | 2018-08-01 | 株式会社東芝 | 多接合型太陽電池 |
JP6226393B2 (ja) * | 2015-12-24 | 2017-11-08 | 株式会社東芝 | 光結合装置 |
DE102021210619A1 (de) * | 2021-09-23 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung |
DE102021126783A1 (de) | 2021-10-15 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauteil |
CN116345925B (zh) * | 2023-04-06 | 2023-10-27 | 广东工业大学 | 一种光子电能变换器的整流方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3229104A (en) * | 1962-12-24 | 1966-01-11 | Ibm | Four terminal electro-optical semiconductor device using light coupling |
US3445686A (en) * | 1967-01-13 | 1969-05-20 | Ibm | Solid state transformer |
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
US4200472A (en) * | 1978-06-05 | 1980-04-29 | The Regents Of The University Of California | Solar power system and high efficiency photovoltaic cells used therein |
US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
-
1982
- 1982-01-22 US US06/341,955 patent/US4477721A/en not_active Expired - Fee Related
- 1982-11-17 JP JP57200514A patent/JPS58130580A/ja active Granted
- 1982-11-23 EP EP82110828A patent/EP0084621B1/de not_active Expired
- 1982-11-23 DE DE8282110828T patent/DE3279432D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0084621B1 (de) | 1989-02-01 |
EP0084621A3 (en) | 1985-08-07 |
JPS58130580A (ja) | 1983-08-04 |
EP0084621A2 (de) | 1983-08-03 |
US4477721A (en) | 1984-10-16 |
JPH0415632B2 (de) | 1992-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |