DE3279090D1 - Resist material and process for forming fine resist pattern - Google Patents

Resist material and process for forming fine resist pattern

Info

Publication number
DE3279090D1
DE3279090D1 DE8282111725T DE3279090T DE3279090D1 DE 3279090 D1 DE3279090 D1 DE 3279090D1 DE 8282111725 T DE8282111725 T DE 8282111725T DE 3279090 T DE3279090 T DE 3279090T DE 3279090 D1 DE3279090 D1 DE 3279090D1
Authority
DE
Germany
Prior art keywords
forming fine
resist
resist pattern
resist material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282111725T
Other languages
English (en)
Inventor
Tsuneo Fujii
Hiroshi Inukai
Takayuki Deguchi
Toshihiko Amano
Masami Kakuchi
Hiroshi Asakawa
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Daikin Industries Ltd
Nippon Telegraph and Telephone Corp
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56205876A external-priority patent/JPS58106535A/ja
Priority claimed from JP56205877A external-priority patent/JPS58106536A/ja
Priority claimed from JP56212730A external-priority patent/JPS58113933A/ja
Priority claimed from JP56212729A external-priority patent/JPS58113932A/ja
Application filed by Daikin Industries Ltd, Nippon Telegraph and Telephone Corp, Daikin Kogyo Co Ltd filed Critical Daikin Industries Ltd
Application granted granted Critical
Publication of DE3279090D1 publication Critical patent/DE3279090D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24826—Spot bonds connect components

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE8282111725T 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern Expired DE3279090D1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP56205876A JPS58106535A (ja) 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
JP56205877A JPS58106536A (ja) 1981-12-19 1981-12-19 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
JP56212730A JPS58113933A (ja) 1981-12-26 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
JP56212729A JPS58113932A (ja) 1981-12-26 1981-12-26 レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法

Publications (1)

Publication Number Publication Date
DE3279090D1 true DE3279090D1 (en) 1988-11-10

Family

ID=27476278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282111725T Expired DE3279090D1 (en) 1981-12-19 1982-12-17 Resist material and process for forming fine resist pattern

Country Status (4)

Country Link
US (2) US4539250A (de)
EP (1) EP0090089B1 (de)
CA (1) CA1207099A (de)
DE (1) DE3279090D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH083630B2 (ja) * 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
US4675273A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Resists formed by vapor deposition of anionically polymerizable monomer
US4675270A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Imaging method for vapor deposited photoresists of anionically polymerizable monomer
JPS62223750A (ja) * 1986-03-26 1987-10-01 Toray Ind Inc 放射線感応ポジ型レジストおよび該レジスト組成物
JPH06105351B2 (ja) * 1986-03-27 1994-12-21 富士写真フイルム株式会社 感光性組成物
EP0247489B1 (de) * 1986-05-28 1993-08-25 Daikin Industries, Limited Fluor enthaltende, Wasser und Ölabweisende Zubereitung
US4833207A (en) * 1986-12-18 1989-05-23 Kansai Paint Company, Limited Curable compositions
EP0293058B1 (de) * 1987-05-28 1995-08-30 Nippon Paint Co., Ltd. Positiv arbeitende lichtempfindliche Harzzusammensetzung
DE3886868T2 (de) * 1987-09-28 1994-04-28 Daikin Ind Ltd Adhäsivzusammensetzung für Biomaterialien.
IE892044A1 (en) * 1989-06-23 1991-01-02 Loctite Ireland Ltd Photoresists formed by polymerisation of di-unsaturated¹monomers
CA2019669A1 (en) * 1989-11-21 1991-05-21 John Woods Anionically polymerizable monomers, polymers thereof, and use of such polymers in photoresists
JP2659025B2 (ja) * 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
JP2707785B2 (ja) * 1990-03-13 1998-02-04 富士通株式会社 レジスト組成物およびパターン形成方法
JPH0442229A (ja) * 1990-06-08 1992-02-12 Fujitsu Ltd レジスト材料およびパターンの形成方法
WO2000017712A1 (en) 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6379874B1 (en) * 1999-10-26 2002-04-30 Cornell Research Foundation, Inc. Using block copolymers as supercritical fluid developable photoresists
DE10153496B4 (de) * 2001-10-31 2007-01-04 Infineon Technologies Ag Verfahren zur Aromatisierung und Cycloaliphatisierung von Fotoresists im UV-Bereich
CA2562593A1 (en) * 2004-04-15 2005-10-27 Daikin Industries, Ltd. Fluorine-containing polymer and treating agent composition
TWI405036B (zh) * 2005-09-29 2013-08-11 Jnc Corp 含氟光固性聚合物組成物
US7867688B2 (en) * 2006-05-30 2011-01-11 Eastman Kodak Company Laser ablation resist
US7745101B2 (en) * 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US8088445B2 (en) 2008-01-29 2012-01-03 General Electric Company Process to increase the oleophobicity of PTFE, and resulting oleophobic articles
US8673040B2 (en) 2008-06-13 2014-03-18 Donaldson Company, Inc. Filter construction for use with air in-take for gas turbine and methods
WO2017033893A1 (ja) * 2015-08-24 2017-03-02 旭硝子株式会社 撥液性成形体の製造方法および撥液剤組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2834763A (en) * 1954-10-29 1958-05-13 Borden Co Copolymers of trifluoroethyl acrylate
US3235421A (en) * 1962-02-06 1966-02-15 Thiokol Chemical Corp Terpolymer of butadiene, acrylic acid and alkylfluoroacrylates, as burning rate modifiers
US3637614A (en) * 1969-02-27 1972-01-25 Du Pont Solvent soluble dry soil resistant fluoropolymers
JPS51105353A (ja) * 1975-03-07 1976-09-17 Hitachi Ltd Denshisenkannoseikobunshisoseibutsu
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS53116831A (en) * 1977-03-23 1978-10-12 Toshiba Corp Radioactive-ray sensitive material
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil
JPS5466122A (en) * 1977-11-07 1979-05-28 Fujitsu Ltd Pattern formation material
US4147851A (en) * 1978-06-13 1979-04-03 E. I. Du Pont De Nemours And Company Fluorine-containing oil- and water-repellant copolymers
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
DE3060510D1 (en) * 1979-03-09 1982-07-29 Thomson Csf Photomasking substances, process for preparing them and mask obtained
US4262081A (en) * 1979-11-21 1981-04-14 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers
US4382985A (en) * 1980-10-11 1983-05-10 Daikin Kogyo Co., Ltd. Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film

Also Published As

Publication number Publication date
CA1207099A (en) 1986-07-02
EP0090089A3 (en) 1984-05-23
US4539250A (en) 1985-09-03
EP0090089B1 (de) 1988-10-05
EP0090089A2 (de) 1983-10-05
US4686168A (en) 1987-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee