DE3277046D1 - Method of producing a metallic thin film on a semiconductor body - Google Patents

Method of producing a metallic thin film on a semiconductor body

Info

Publication number
DE3277046D1
DE3277046D1 DE8282301513T DE3277046T DE3277046D1 DE 3277046 D1 DE3277046 D1 DE 3277046D1 DE 8282301513 T DE8282301513 T DE 8282301513T DE 3277046 T DE3277046 T DE 3277046T DE 3277046 D1 DE3277046 D1 DE 3277046D1
Authority
DE
Germany
Prior art keywords
producing
thin film
semiconductor body
metallic thin
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301513T
Other languages
English (en)
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3277046D1 publication Critical patent/DE3277046D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8282301513T 1981-03-23 1982-03-23 Method of producing a metallic thin film on a semiconductor body Expired DE3277046D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042209A JPS5948952B2 (ja) 1981-03-23 1981-03-23 金属薄膜の形成方法

Publications (1)

Publication Number Publication Date
DE3277046D1 true DE3277046D1 (en) 1987-09-24

Family

ID=12629624

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301513T Expired DE3277046D1 (en) 1981-03-23 1982-03-23 Method of producing a metallic thin film on a semiconductor body

Country Status (4)

Country Link
US (1) US4430364A (de)
EP (1) EP0064805B1 (de)
JP (1) JPS5948952B2 (de)
DE (1) DE3277046D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161235U (ja) * 1984-04-04 1985-10-26 向川　邦彦 内装壁材用出隅当て枠
JPS6231116A (ja) * 1985-08-02 1987-02-10 Toshiba Corp 半導体装置の製造方法
EP0252667B1 (de) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Verfahren zum Abscheiden aus der Gasphase
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
GB8623788D0 (en) * 1986-10-03 1986-11-05 Emi Plc Thorn Electrical device
US5023994A (en) * 1988-09-29 1991-06-18 Microwave Power, Inc. Method of manufacturing a microwave intergrated circuit substrate including metal lined via holes
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
EP0448763A1 (de) * 1990-03-30 1991-10-02 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Herstellung von leitenden Schichten oder Strukturen für höchstintegrierte Schaltungen
JPH0469526U (de) * 1990-10-30 1992-06-19
JPH04323376A (ja) * 1991-04-22 1992-11-12 Osaka Gas Co Ltd 酸化物薄膜の製造方法
DE19730007C1 (de) * 1997-07-12 1999-03-25 Mtu Muenchen Gmbh Verfahren und Vorrichtung zur Gasphasendiffusionsbeschichtung von Werkstücken aus warmfestem Material mit einem Beschichtungsmaterial
US6169031B1 (en) * 1999-05-28 2001-01-02 National Science Council Chemical vapor deposition for titanium metal thin film
US7387815B2 (en) * 2003-09-19 2008-06-17 Akzo Nobel N.V. Metallization of substrate(s) by a liquid/vapor deposition process
JP4419062B2 (ja) * 2004-03-29 2010-02-24 ソニー株式会社 画像処理装置および方法、記録媒体、並びにプログラム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3471321A (en) * 1964-12-30 1969-10-07 Texas Instruments Inc Vapor coating aluminum on ironcontaining substrate
US3801365A (en) * 1971-08-05 1974-04-02 Energy Conversion Devices Inc Method for producing an electrical device
GB1436999A (en) * 1972-06-21 1976-05-26 Lucas Electrical Ltd Method of depositing aluminium on the surface of a semi- conductor wafer
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
GB2041983B (en) * 1978-11-09 1982-12-01 Standard Telephones Cables Ltd Metallising semiconductor devices

Also Published As

Publication number Publication date
EP0064805A2 (de) 1982-11-17
US4430364A (en) 1984-02-07
EP0064805A3 (en) 1984-10-10
JPS57158370A (en) 1982-09-30
EP0064805B1 (de) 1987-08-19
JPS5948952B2 (ja) 1984-11-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee